... Voltage-controlled oscillator (VCO), millimetre-wave (mm-wave), silicon germanium (SiGe), heterojunction bipolar transistor (HBT), Colpitts oscillator, phase noise, impulse sensitivity function, phased arrays, vector sum, hybrid coupler, variable gain amplifier (VGA), Gilbert mixer, integrated circu ...
a quasi-monolithic optical receiver using a standard
... noise, and power dissipation when digital CMOS technology is employed for implementing the amplifier circuit in an optical receiver. The primary objective of the research was to design, and build a frontend amplifier of an optical receiver using standard digital CMOS technology. The amplifier will b ...
... noise, and power dissipation when digital CMOS technology is employed for implementing the amplifier circuit in an optical receiver. The primary objective of the research was to design, and build a frontend amplifier of an optical receiver using standard digital CMOS technology. The amplifier will b ...
Keysight Technologies Practical RF Amplifier Design Using the
... parameters, and a nonlinear model exist for the chosen transistor. Design cycle times are significantly reduced if nonlinear models and measured s-parameter and noise parameter data is available from the manufacturer. Having the data in electronic form speeds import into the chosen RF/μWave circuit ...
... parameters, and a nonlinear model exist for the chosen transistor. Design cycle times are significantly reduced if nonlinear models and measured s-parameter and noise parameter data is available from the manufacturer. Having the data in electronic form speeds import into the chosen RF/μWave circuit ...
A SiGe BiCMOS LNA FOR mm-WAVE APPLICATIONS
... netlist which is included in a circuit simulator to evaluate and investigate the LNA performance. Two LNAs are designed and prototyped using the 0.13 µm SiGe BiCMOS process from IBM as part of the experimental process to validate the hypothesis. One LNA implements the preferred inductor structures a ...
... netlist which is included in a circuit simulator to evaluate and investigate the LNA performance. Two LNAs are designed and prototyped using the 0.13 µm SiGe BiCMOS process from IBM as part of the experimental process to validate the hypothesis. One LNA implements the preferred inductor structures a ...
JEDEC STANDARD
... forward recovery time (tf r): The time interval between the instant when the forward voltage rises through a specified first value, usually 10% of its final value, and the instant when it falls from its peak value, VFRM, to a specified low second value, VFR, upon the application of a step current fo ...
... forward recovery time (tf r): The time interval between the instant when the forward voltage rises through a specified first value, usually 10% of its final value, and the instant when it falls from its peak value, VFRM, to a specified low second value, VFR, upon the application of a step current fo ...
LT3091 - –36V, 1.5A Negative Linear Regulator with Programmable
... low dropout voltage. The device can also be configured as a 3-terminal floating regulator. ...
... low dropout voltage. The device can also be configured as a 3-terminal floating regulator. ...
3-Phase BLDC/PMSM Low- Voltage Motor Control Drive Page 1
... Freescale’s 3-Phase BLDC/PMSM Low-Voltage Motor Control Drive is a 3-phase power stage that will operate with DC input voltages in the range 12–24 V, 4 A. Together with the daughter boards, it provides a software-development platform that allows algorithms to be written and tested without designing ...
... Freescale’s 3-Phase BLDC/PMSM Low-Voltage Motor Control Drive is a 3-phase power stage that will operate with DC input voltages in the range 12–24 V, 4 A. Together with the daughter boards, it provides a software-development platform that allows algorithms to be written and tested without designing ...
MAX4291/MAX4292/MAX4294 Ultra-Small, 1.8V, µPower, Rail-to-Rail I/O Op Amps General Description
... single supply or ±0.9V to ±2.75V dual supplies and has Rail-to-Rail® input/output capabilities. These amplifiers provide a 500kHz gain-bandwidth product and 120dB open-loop voltage gain while using only 100µA of supply current per amplifier. The combination of low input offset voltage (±200µV) and h ...
... single supply or ±0.9V to ±2.75V dual supplies and has Rail-to-Rail® input/output capabilities. These amplifiers provide a 500kHz gain-bandwidth product and 120dB open-loop voltage gain while using only 100µA of supply current per amplifier. The combination of low input offset voltage (±200µV) and h ...
ENHANCEMENT OF DEFECT DIAGNOSIS BASED ON THE ANALYSIS OF CMOS DUT BEHAVIOUR
... Total current cause by a bridging fault Quiescent power supply current Integrated Circuit ...
... Total current cause by a bridging fault Quiescent power supply current Integrated Circuit ...
Assessment of Circuit Optimization Techniques Under NBTI Variability and Aging
... sizing method [7], in which the pull-up and pulldown networks in the same gate could be sized to different ratios. This method reduces the area penalty of gate-level sizing by an average of 43%. Khan et al. studied another transistor-level sizing method that considered the impact of transistor sizin ...
... sizing method [7], in which the pull-up and pulldown networks in the same gate could be sized to different ratios. This method reduces the area penalty of gate-level sizing by an average of 43%. Khan et al. studied another transistor-level sizing method that considered the impact of transistor sizin ...
Freescale PowerPoint Template
... Freescale Semiconductor Confidential and Proprietary Information. Freescale™ and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. ...
... Freescale Semiconductor Confidential and Proprietary Information. Freescale™ and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. ...
6A Boost/Inverting DC/DC Converter with Fault Protection
... –12V at 1.2A from a 5V input. In addition, the LT3579’s slave switch allows the part to be configured in high voltage, high power charge pump topologies that are very efficient and require fewer components than traditional circuits. The LT3579’s switching frequency range can be set between 200kHz a ...
... –12V at 1.2A from a 5V input. In addition, the LT3579’s slave switch allows the part to be configured in high voltage, high power charge pump topologies that are very efficient and require fewer components than traditional circuits. The LT3579’s switching frequency range can be set between 200kHz a ...
DC Characteristics of a CMOS Inverter
... consists of a p-type and an n-type device connected in series. The DC transfer characteristics of the inverter are a function of the output voltage (Vout) with respect to the input voltage (Vin). ...
... consists of a p-type and an n-type device connected in series. The DC transfer characteristics of the inverter are a function of the output voltage (Vout) with respect to the input voltage (Vin). ...
Aalborg Universitet Klimczak, Pawel
... during last decade. A government support and take-off projects in Europe and US shall ensure an increasing trend in future too. Some of SES based plants , like hydro-, geothermal-, biofuel-plants, use synchronous generators directly connected to the grid. But some other SES technologies, like fuel c ...
... during last decade. A government support and take-off projects in Europe and US shall ensure an increasing trend in future too. Some of SES based plants , like hydro-, geothermal-, biofuel-plants, use synchronous generators directly connected to the grid. But some other SES technologies, like fuel c ...
MAX1606 28V Internal Switch LCD Bias Supply with True Shutdown General Description
... up at lower input voltages and exhibit less ripple, but also provide reduced output power. This occurs when the inductance is sufficiently large to prevent the maximum current limit from being reached before the maximum on-time expires. The inductor’s saturation current rating should be greater than ...
... up at lower input voltages and exhibit less ripple, but also provide reduced output power. This occurs when the inductance is sufficiently large to prevent the maximum current limit from being reached before the maximum on-time expires. The inductor’s saturation current rating should be greater than ...
chapter 9: power management
... standby current can be reduced to a mA or less using bipolar technology, and to only a few μA in CMOS parts. In regulators which offer a shutdown mode, the shutdown state standby current may be reduced to 1 μA or less. Nearly all regulators will have some means of current limiting and over temperatu ...
... standby current can be reduced to a mA or less using bipolar technology, and to only a few μA in CMOS parts. In regulators which offer a shutdown mode, the shutdown state standby current may be reduced to 1 μA or less. Nearly all regulators will have some means of current limiting and over temperatu ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.