DC/DC converter, part 1
... Basic use of DC-DC converter Unregulated DC input, controlled DC output Regulated DC may be larger or smaller than the unregulated DC voltage Input to DC-DC converter may vary a lot ...
... Basic use of DC-DC converter Unregulated DC input, controlled DC output Regulated DC may be larger or smaller than the unregulated DC voltage Input to DC-DC converter may vary a lot ...
Lokal fulltext - Chalmers tekniska högskola
... high bandgap energy within another semiconductor material with lower bandgap energy. This configuration is referred to as a ”barrier”. Due to its nonlinear capacitance and anti-symmetric current-voltage, HBV generates only odd harmonics of the input signal (n=3,5,7,...). In addition, unlike SD, HBV ...
... high bandgap energy within another semiconductor material with lower bandgap energy. This configuration is referred to as a ”barrier”. Due to its nonlinear capacitance and anti-symmetric current-voltage, HBV generates only odd harmonics of the input signal (n=3,5,7,...). In addition, unlike SD, HBV ...
A DC-4-ghz true logarithmic amplifier: theory and implementation
... response in low-frequency applications. A technique that has been more successful at high frequencies is the piecewise approximation of a logarithm, and this is the technique used in this work. A. The Series Linear-Limit Logarithmic Amplifier Fig. 2 shows the most widely used high-frequency true log ...
... response in low-frequency applications. A technique that has been more successful at high frequencies is the piecewise approximation of a logarithm, and this is the technique used in this work. A. The Series Linear-Limit Logarithmic Amplifier Fig. 2 shows the most widely used high-frequency true log ...
Characterization of atomic layer deposition HfO2, Al2O3
... method. The films deposited using this method typically result in relatively good electrical, physical, chemical, and thermal characteristics, have good film conformality, and can be deposited at relatively low temperatures.1,2,10,13,14,25 Recently, atomic layer deposited films have also been invest ...
... method. The films deposited using this method typically result in relatively good electrical, physical, chemical, and thermal characteristics, have good film conformality, and can be deposited at relatively low temperatures.1,2,10,13,14,25 Recently, atomic layer deposited films have also been invest ...
CMPWR150 - 500 mA/3.3 V SmartOR TM Power Regulator
... (RS). This was measured to be approximately 0.2 W. It is recommended that this effective source impedance be no greater than 0.25 W to ensure precise switching is maintained during VCC selection and deselection. Both the rise and fall times during VCC power−up/down sequencing were controlled at a 20 ...
... (RS). This was measured to be approximately 0.2 W. It is recommended that this effective source impedance be no greater than 0.25 W to ensure precise switching is maintained during VCC selection and deselection. Both the rise and fall times during VCC power−up/down sequencing were controlled at a 20 ...
MAX1519/MAX1545 Dual-Phase, Quick-PWM Controllers for Programmable CPU Core Power Supplies General Description
... instantaneous response to fast load-current steps. The MAX1519/MAX1545 include active voltage positioning with adjustable gain and offset, reducing power dissipation and bulk output capacitance requirements. The MAX1519/MAX1545 are intended for two different notebook CPU core applications: stepping ...
... instantaneous response to fast load-current steps. The MAX1519/MAX1545 include active voltage positioning with adjustable gain and offset, reducing power dissipation and bulk output capacitance requirements. The MAX1519/MAX1545 are intended for two different notebook CPU core applications: stepping ...
PolySurg Cover
... impedance and low capacitance that makes it transparent to high speed data circuits. Signals are not distorted or disrupted due to very low off-state current leakage. With ESDA devices, waveform definition stays true and high-speed signals do not degrade. ESDA products utilize a unique polymer-based ...
... impedance and low capacitance that makes it transparent to high speed data circuits. Signals are not distorted or disrupted due to very low off-state current leakage. With ESDA devices, waveform definition stays true and high-speed signals do not degrade. ESDA products utilize a unique polymer-based ...
... In this work, a fully differential Operational Amplifier (OpAmp) with high GainBandwidth (GBW), high linearity and Signal-to-Noise ratio (SNR) has been designed in 65nm CMOS technology with 1.1v supply voltage. The performance of the OpAmp is evaluated using Cadence and Matlab simulations and it sat ...
MAX4735 Low-Voltage, 0.31 , Quad-SPDT Analog Switch General Description
... 19-3581; Rev 0; 1/05 ...
... 19-3581; Rev 0; 1/05 ...
UNIVERSITY OF CALIFORNIA, SAN DIEGO CMOS Power Amplifiers for Wireless Communications
... SPECTRE simulated and MATLAB fitted PMOS source-drain current versus gate voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114 Schematic of the designed two-stage CMOS power amplifier. . . . . . . . . . . . 115 Approximate time-domain wavefor ...
... SPECTRE simulated and MATLAB fitted PMOS source-drain current versus gate voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114 Schematic of the designed two-stage CMOS power amplifier. . . . . . . . . . . . 115 Approximate time-domain wavefor ...
SD101AW-E3-08
... Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use ...
... Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use ...
Dual Precision Retriggerable/Resettable Monostable
... The block diagram of the MC14538B is shown in Figure 1, with circuit operation following. As shown in Figure 1 and 10, before an input trigger occurs, the monostable is in the quiescent state with the Q output low, and the timing capacitor CX completely charged to VDD. When the trigger input A goes ...
... The block diagram of the MC14538B is shown in Figure 1, with circuit operation following. As shown in Figure 1 and 10, before an input trigger occurs, the monostable is in the quiescent state with the Q output low, and the timing capacitor CX completely charged to VDD. When the trigger input A goes ...
TOP242-250 - Power Integrations
... EXTERNAL CURRENT LIMIT (available in Y, R or F package) or one terminal MULTI-FUNCTION (available in P or G package) have been added to implement some of the new functions. These terminals can be connected to the SOURCE pin to operate the TOPSwitch-GX in a TOPSwitch-like three terminal mode. However ...
... EXTERNAL CURRENT LIMIT (available in Y, R or F package) or one terminal MULTI-FUNCTION (available in P or G package) have been added to implement some of the new functions. These terminals can be connected to the SOURCE pin to operate the TOPSwitch-GX in a TOPSwitch-like three terminal mode. However ...
V - ResearchGate
... [1] N. Mohan, W. P. Robbin, and T. Undeland, Power Electronics: Converters, Applications, and Design, 2nd ed. New York: Wiley, 1995. [2] B. K. Bose, Power Electronics and Variable Frequency Drives:Technology and Applications. IEEE Press, 1997. [3] H.W. van der Broeck, H.-C. Skudelny, and G.V. Stanke ...
... [1] N. Mohan, W. P. Robbin, and T. Undeland, Power Electronics: Converters, Applications, and Design, 2nd ed. New York: Wiley, 1995. [2] B. K. Bose, Power Electronics and Variable Frequency Drives:Technology and Applications. IEEE Press, 1997. [3] H.W. van der Broeck, H.-C. Skudelny, and G.V. Stanke ...
Lecture: PWM Techniques - Ohio State ECE
... [1] N. Mohan, W. P. Robbin, and T. Undeland, Power Electronics: Converters, Applications, and Design, 2nd ed. New York: Wiley, 1995. [2] B. K. Bose, Power Electronics and Variable Frequency Drives:Technology and Applications. IEEE Press, 1997. [3] H.W. van der Broeck, H.-C. Skudelny, and G.V. Stanke ...
... [1] N. Mohan, W. P. Robbin, and T. Undeland, Power Electronics: Converters, Applications, and Design, 2nd ed. New York: Wiley, 1995. [2] B. K. Bose, Power Electronics and Variable Frequency Drives:Technology and Applications. IEEE Press, 1997. [3] H.W. van der Broeck, H.-C. Skudelny, and G.V. Stanke ...
Lecture 25
... [1] N. Mohan, W. P. Robbin, and T. Undeland, Power Electronics: Converters, Applications, and Design, 2nd ed. New York: Wiley, 1995. [2] B. K. Bose, Power Electronics and Variable Frequency Drives:Technology and Applications. IEEE Press, 1997. [3] H.W. van der Broeck, H.-C. Skudelny, and G.V. Stanke ...
... [1] N. Mohan, W. P. Robbin, and T. Undeland, Power Electronics: Converters, Applications, and Design, 2nd ed. New York: Wiley, 1995. [2] B. K. Bose, Power Electronics and Variable Frequency Drives:Technology and Applications. IEEE Press, 1997. [3] H.W. van der Broeck, H.-C. Skudelny, and G.V. Stanke ...
LT3032 Series - Dual 150mA Positive/Negative Low Noise Low
... of the LT3032E over the full –40°C to 125°C operating junction temperature range is assured by design, characterization, and correlation with statistical process controls. The LT3032I regulators are guaranteed over the full –40°C to 125°C operating junction temperature range. Note 3: Parasitic diode ...
... of the LT3032E over the full –40°C to 125°C operating junction temperature range is assured by design, characterization, and correlation with statistical process controls. The LT3032I regulators are guaranteed over the full –40°C to 125°C operating junction temperature range. Note 3: Parasitic diode ...
Secondary-Side Controller with Current Share and Housekeeping ADM1041A
... Another key feature of the ADM1041A is its control of an OrFET. The OrFET causes lower power dissipation across the OR'ing diode. The main function of the OrFET is to disconnect the power supply from the load in the event of a fault occurring during steady state operation, for example, if a filter c ...
... Another key feature of the ADM1041A is its control of an OrFET. The OrFET causes lower power dissipation across the OR'ing diode. The main function of the OrFET is to disconnect the power supply from the load in the event of a fault occurring during steady state operation, for example, if a filter c ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.