RPI-0129
... The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from RO ...
... The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from RO ...
Bipolar Transistor 100V, 2A VCE(sat);0.6 max. PNP Single TP
... "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportati ...
... "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportati ...
AN-996 Using the Fairchild FST Bus Switch AN-
... FST devices produce an output voltage that is a maximum of 1V below VCC. This is due to the inherent design characteristics of the NMOS device used in FST switch products. When the VGS voltage reaches VTN, which is approximately 1V, the NMOS channel closes off. With the channel closed, RON is increa ...
... FST devices produce an output voltage that is a maximum of 1V below VCC. This is due to the inherent design characteristics of the NMOS device used in FST switch products. When the VGS voltage reaches VTN, which is approximately 1V, the NMOS channel closes off. With the channel closed, RON is increa ...
Practical Aspects of Using PowerMOS Transistors to Drive Inductive Loads Introduction AN-7517
... Usually this is given in the form of a curve of rDS(ON) vs temperature on the datasheet. The worst case rDS(ON) at any elevated junction temperature is determined as follows. First, using the rDS(ON) vs temperature curve for the device, obtain the multiplicative factor at the expected operating junc ...
... Usually this is given in the form of a curve of rDS(ON) vs temperature on the datasheet. The worst case rDS(ON) at any elevated junction temperature is determined as follows. First, using the rDS(ON) vs temperature curve for the device, obtain the multiplicative factor at the expected operating junc ...
Introduction to Power MOSFETs and their Applications
... thermally by forcing it to dissipate too much power. ON-RESISTANCE RDS(on) The on-resistance of a Power MOSFET is a very important parameter because it determines how much current the device can carry for low to medium frequency (less than 200kHz) applications. After being turned on, the on-state is ...
... thermally by forcing it to dissipate too much power. ON-RESISTANCE RDS(on) The on-resistance of a Power MOSFET is a very important parameter because it determines how much current the device can carry for low to medium frequency (less than 200kHz) applications. After being turned on, the on-state is ...
Circuits for multiple valued logic—A tutorial and appreciation
... plotted in Figure 3 for a i0 kilohm [10K) resistor for voltages from -20 to +20. Notice the perfect resistor is voltage polarity, or current direction, independent. At high voltages real resistors often depart from this relationship for many reasons. Figure 4 shows a simple two-resistor circuit whic ...
... plotted in Figure 3 for a i0 kilohm [10K) resistor for voltages from -20 to +20. Notice the perfect resistor is voltage polarity, or current direction, independent. At high voltages real resistors often depart from this relationship for many reasons. Figure 4 shows a simple two-resistor circuit whic ...
Test and Handling of SPST RF-MEMS Switches
... The longest lifetime of the switches and best contact resistance stability will be achieved when they are cold-switched, that is, there is no difference between the drain and source potentials when the switch opens or closes. This assures that no additional energy is dissipated at the contacts durin ...
... The longest lifetime of the switches and best contact resistance stability will be achieved when they are cold-switched, that is, there is no difference between the drain and source potentials when the switch opens or closes. This assures that no additional energy is dissipated at the contacts durin ...
MJ2955
... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any ...
... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any ...
Designstudie av framtida 10kW växelriktare Daniel Eidborn
... insight into are the most suitable components available for inverters, the way to use them, their expected efficiency and weight of the implemented solutions. ...
... insight into are the most suitable components available for inverters, the way to use them, their expected efficiency and weight of the implemented solutions. ...
Current Mirrors
... • What if the bias voltage is independent of supply voltage? • Is there a way of generating reliable currents? ...
... • What if the bias voltage is independent of supply voltage? • Is there a way of generating reliable currents? ...
CPH5505 数据资料DataSheet下载
... exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. ...
... exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. ...
Recall-Lecture 7
... – Step 2: Set the conditions to know whether diode is on or off – sketch your output waveform ...
... – Step 2: Set the conditions to know whether diode is on or off – sketch your output waveform ...
Lab 8: Series RC Circuit
... It is good practice to short the unused pin on the trimpot when using it as a variable resistor ...
... It is good practice to short the unused pin on the trimpot when using it as a variable resistor ...
paper - ap pgecet
... If α = 0.981, ICO =6 µA and IB=100 µA for a NPN transistor, then the value of IC will be (A) 2.3 mA (B) 3.1 mA (C) 4.6 mA (D) 5.2 mA In an integrated circuit, the SiO2 layer provides (A) Electrical connection to external circuit (B) Physical strength (C) Isolation (D) Conducting path A PIN diode is ...
... If α = 0.981, ICO =6 µA and IB=100 µA for a NPN transistor, then the value of IC will be (A) 2.3 mA (B) 3.1 mA (C) 4.6 mA (D) 5.2 mA In an integrated circuit, the SiO2 layer provides (A) Electrical connection to external circuit (B) Physical strength (C) Isolation (D) Conducting path A PIN diode is ...
Tutorial 5. Fundamentals of the MOSFET
... Design the semiconductor doping concentration to yield a specified threshold voltage. Consider an aluminium-silicon dioxide-silicon MOS structure (ms -0.35 V). The silicon is n type, the oxide thickness is tox = 650x10-8 cm, and the trapped charge density is Q’ss = 1010 electronic charges per cm. ...
... Design the semiconductor doping concentration to yield a specified threshold voltage. Consider an aluminium-silicon dioxide-silicon MOS structure (ms -0.35 V). The silicon is n type, the oxide thickness is tox = 650x10-8 cm, and the trapped charge density is Q’ss = 1010 electronic charges per cm. ...
Amateur Radio Technician Class Element 2 Course Presentation
... • Diode stops current flow when it tries to go in the reverse direction ...
... • Diode stops current flow when it tries to go in the reverse direction ...
01 Diodes - ClassNet
... The picture below shows the association between the schematic picture of a diode and the colour coding of a diode Notice that the white band on the diode is at the Cathode end of the diode ...
... The picture below shows the association between the schematic picture of a diode and the colour coding of a diode Notice that the white band on the diode is at the Cathode end of the diode ...
DATA SHEET PMBT5550 NPN high-voltage transistor
... not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environ ...
... not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environ ...
Lightning and Surge Protection
... Although the voltage and current levels during a lightning strike are very high the time duration is extremely short. The period of the discharge is only a few milliseconds. This means that the actual power transferred is relatively small - perhaps as little as a 100 watts. In extremely intense trop ...
... Although the voltage and current levels during a lightning strike are very high the time duration is extremely short. The period of the discharge is only a few milliseconds. This means that the actual power transferred is relatively small - perhaps as little as a 100 watts. In extremely intense trop ...
Earth Leakage Circuit Breaker (ELCB)
... The polarity of the phase winding and neutral winding on the core is so chosen that, in normal condition mmf of one winding opposes that of another. As it is assumed that, in normal operating conditions the current goes through the phase wire will be returned via neutral wire if there's no leaka ...
... The polarity of the phase winding and neutral winding on the core is so chosen that, in normal condition mmf of one winding opposes that of another. As it is assumed that, in normal operating conditions the current goes through the phase wire will be returned via neutral wire if there's no leaka ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.