Download RPI-0129

RPI-0129
Photointerrupter, Ultraminiature SMD type
Absolute maximum ratings (Ta=25°C)
Symbol
Limits
Unit
Forward current
IF
50
mA
Reverse voltage
VR
5
V
Power dissipation
PD
80
mW
Collector-emitter voltage
VCEO
30
V
Emitter-collector voltage
VECO
4.5
V
Collector current
IC
30
mA
Collector power dissipation
PC
80
mW
Operating temperature
Topr
−25 to +85
°C
Storage temperature
Tstg
−30 to +85
°C
Applications
DSC(Digital steal camera)
DVC(Digital video camera)
Digital handy phone
Features
1) Ultraminiature SMD type.
2) Gap 1.2mm.
Electrical and optical characteristics (Ta=25°C)
Infrared Transfer
Output Input
light
characteristics charac- characemitter
teristics teristics
diode
Parameter
Forward voltage
Photo
transistor
Response time
Symbol
Min.
Typ.
Max.
Unit
VF
−
1.3
1.6
V
IR
−
−
10
μA
VR=5V
ICEO
−
−
0.5
μA
VCE=10V
Reverse current
Dark current
Peak sensitivity wavelength
λP
−
800
−
nm
Collector current
IC
0.95
−
4.95
mA
Collector-emitter saturation voltage VCE(sat)
−
−
0.4
V
Rise time
tr
−
10
−
μs
Fall time
tf
−
10
−
μs
Cut-off frequency
fC
−
1
−
MHz
Peak light emitting wavelength
λP
−
950
−
nm
tr tf
−
10
−
μs
λP
−
800
−
nm
Response time
Maximum sensitivity wavelength
Conditions
IF=50mA
−
VCE=5V, IF=20mA
IF=20mA, IC=0.1mA
VCC=5V, IF=20mA, RL=100Ω
IF=50mA
∗ Non-coherent Infrared light emitting diode used.
VCC=5V, IC=1mA, RL=100Ω
∗ This product is not designed to be protected against electromagnetic wave.
−
1.2
d
0.8
0.6
0.4
0.2
0
0
0.5
1.0
1.5
2.0
50
40
30
20
10
0
2.5
DISTANCE : d (mm)
1.2
d
1.0
0.8
0.6
0.4
0.2
0
0
0.5
1.0
1.5
2.0
DISTANCE : d (mm)
Fig.4 Relative output current vs.
distance ( )
POWER DISSIPATION /
COLLECTOR POWER DISSIPTION : PD/PC (mW)
Fig.1 Relative output current vs.
distance ( )
−20
0
20
40
60
80
40
30
20
10
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
AMBIENT TEMPERATURE : Ta (°C)
FORWARD VOLTAGE : VF (V)
Fig.2 Forward current falloff
Fig.3 Forward current vs. forward
voltage
120
100
PD PC
80
60
40
20
0
−25°C
0°C
25°C
50°C
75°C
0
0.2
100
−20
0
20
40
60
80
100
AMBIENT TEMPERATURE : Ta (°C)
Fig.5 Power dissipation / collector power
dissipation vs. ambient temperature
RELATIVE COLLECTOR CURRENT : Ic (%)
1.0
FORWARD CURRENT : IF (mA)
50
FORWARD CURRENT : IF (mA)
RELATIVE COLLECTOR CURRENT : Ic (%)
Electrical and optical characteristics curves
RELATIVE COLLECTOR CURRENT : Ic (%)
Output
(phototransistor )
Input (LED)
Parameter
100
80
60
40
20
0
−25
0
25
50
VCE=5V
IF=20mA
75
100
AMBIENT TEMPERATURE : Ta (°C)
Fig.6 Relative output vs. ambient
temperature
Dimensions (Unit : mm)
Notes:
1. Unspecified tolerance
shall be ±0.2 .
2. Dimension in parenthesis are
show for reference.
1. 0
3. 3
( 4- 0. 6)
( 4- 0. 2)
( 4- 0. 3)
1. 6
3. 6
C0. 4
( 0. 7)
C0. 4
( 0. 3)
C0. 2
( 2- 0. 1)
2. 6
( 2- 0. 2)
1. 2
( 0. 75)
( 0. 05)
0. 15
2. 2
0. 5
2. 8
optical
center
2- R0. 3
Internal Connection diagram
( 2. 90)
Emitter
Cathode
( 1. 60 )
( 2. 35 )
( 1. 28)
Collecter
Anode
100
5
3
2
1
RL=1kΩ
RL=500Ω
10
RL=100Ω
100
VCE=30V
VCE=20V
VCE=10V
10
1
0.1
0
0
5
10
15
20
25
FORWARD CURRENT : IF (mA)
Fig.7 Collector current vs.
forward current
7
COLLECTOR CURRENT : IC (mA)
DARK CURRENT : ICEO (nA)
4
RESPONSE TIME : tr (μs)
COLLECTOR CURRENT : IC (mA)
1000
1
0.05 0.1
1
−25
10
0
25
50
75
COLLECTOR CURRENT : IC (mA)
AMBIENT TEMPERATURE : Ta (°C)
Fig.8 Response time vs.
collector current
Fig.9 Dark current vs.
ambient temperature
Input
100
VCC
6
IF=30mA
5
Input
Output
25mA
4
20mA
3
15mA
2
10mA
1
5mA
90%
RL
10%
Output
td
tr
tf
td : Delay time
t r : Rise time (time for output current to rise from
0
0
2
4
6
8
10
COLLECTOR TO EMITTER VOLTAGE: VCE (V)
Fig.10 Output characteristics
10% to 90% of peak current)
t f : Fall time (time for output current to fall from 90%
to 10% of peak current)
Fig.11 Response time measurement circuit
2010.04 Rev.A
Notice
Notes
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