Download RPI-441C1

RPI-441C1
Photointerrupter, Small type
Absolute maximum ratings (Ta=25°C)
Symbol
Limits
Unit
Forward current
IF
50
mA
Reverse voltage
VR
5
V
Power dissipation
PD
80
mW
Output
(phototransistor )
Input (LED)
Parameter
Collector-emitter voltage
VCEO
30
V
Emitter-collector voltage
VECO
4.5
V
IC
30
mA
Collector current
Collector power dissipation
Applications
Optical control equipment
Facsimiles
Printers
Features
PC
80
mW
Operating temperature
Topr
−25 to +85
°C
Storage temperature
Tstg
−30 to +85
°C
1) Compact with a 4mm gap.
2) High precision position detection
(slit width of 0.5mm).
3) Minimal influence from stray light.
4) Low collector-emitter voltage.
Electrical and optical characteristics (Ta=25°C)
Unit
Symbol
Min.
Typ.
Max.
VF
−
1.3
1.6
V
Reverse current
IR
−
−
10
μA
VR=5V
ICEO
−
−
0.5
μA
VCE=10V
Output Input
charac- characteristics teristics
Peak sensitivity wavelength
λP
−
800
−
nm
Transfer
characteristics
Parameter
Forward voltage
Collector current
IC
0.2
0.55
−
mA
VCE(sat)
−
−
0.4
V
Dark current
Collector-emitter saturation
voltage
−
VCE=5V, IF=20mA
IF=20mA, IC=0.1mA
tr tf
−
10
−
μs
fC
−
1
−
MHz
Peak light emitting wavelength
λP
−
950
−
nm
Response time
tr tf
−
10
−
μs
Maximum sensitivity wavelength
λP
−
800
−
nm
VCC=5V, IF=20mA, RL=100Ω
IF=50mA
∗ Non-coherent Infrared light emitting diode used.
VCC=5V, IC=1mA, RL=100Ω
∗ This product is not designed to be protected against electromagnetic wave.
−
75
50
25
FORWARD CURRENT : IF (mA)
VCE=5V
IF=20mA
Ta=25°C
100
FORWARD CURRENT : IF (mA)
50
40
30
20
10
50
−25°C
0°C
25°C
50°C
75°C
40
30
20
10
d
0
0
1.0
2.0
0
3.0
DISTANCE : d (mm)
25
1.0
2.0
3.0
DISTANCE : d (mm)
Fig.4 Relative output current vs.
distance ( )
POWER DISSIPATION /
COLLECTOR POWER DISSIPATION : PD / Pc (mW)
d
50
0
0
20
40
60
80
0
0
100
100
PC
80
60
40
20
0
−20
0
20
40
60
80
0.8
1.2
1.6
2.0
Fig.3 Forward current vs. forward
voltage
120
PD
0.4
FORWARD VOLTAGE : VF (V)
Fig.2 Forward current falloff
VCE=5V
IF=20mA
Ta=25°C
75
0
AMBIENT TEMPERATURE : Ta (°C)
Fig.1 Relative output current vs.
distance ( )
100
−20
RELATIVE COLLECTOR CURRENT : Ic (%)
RELATIVE COLLECTOR CURRENT : Ic (%)
Electrical and optical characteristics curves
RELATIVE COLLECTOR CURRENT : Ic (%)
Infrared
light
emitter
diode
Photo
transistor
IF=50mA
Cut-off frequency
Response time
Conditions
100
AMBIENT TEMPERATURE : Ta (°C)
Fig.5 Power dissipation / collector power
dissipation vs. ambient temperature
100
50
0
0
−25
0
25
50
75
100
AMBIENT TEMPERATURE : Ta (°C)
Fig.6 Relative output vs. ambient
temperature
External dimensions (Unit : mm)
Through hole
6.7
4-φ0.8
2.5
0.5
4.2
8±0.5
2.6
Gap
φ1.4
4±0.5
3.6
3.6±0.5
(2.4)
1.2
5.2
4.2
Optical axis center
C
0.
6
Cross-section A-A
1.2
A
4-0.2
4
0.
C
4-0.5
A
(2.5)
(6.7)
3.25±0.1
φ1.2
+0
-0.1
Collector
Cathode
Anode
Notes:
1. Unspecified tolerance
shall be ±0.2 .
2. Dimension in parenthesis are
show for reference.
Emitter
1.0
RL=1kΩ
RL=500Ω
10
RL=100Ω
100
VR=10V
10
VR=20V
VR=30V
1
0.1
0
0
1
10
20
30
40
50
0.1
FORWARD CURRENT : IF (mA)
Fig.7 Collector current vs.
forward current
Input
COLLECTOR CURRENT : Ic (mA)
DARK CURRENT : ID (nA)
1000
RESPONSE TIME : t (μs)
COLLECTOR CURRENT : Ic (mA)
100
2.0
1
10
−25
0
25
50
75
COLLECTOR CURRENT : Ic (mA)
AMBIENT TEMPERATURE : Ta (°C)
Fig.8 Response time vs.
collector current
Fig.9 Dark current vs.
ambient temperature
100
VCC
2.5
IF=50mA
2
Input
Output
40mA
1.5
90%
RL
30mA
10%
Output
1
20mA
td
tr
0.5
tf
td : Delay time
10mA
t r : Rise time (time for output current to rise
0
0
2
4
6
8
10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.10 Output characteristics
from 10% to 90% of peak current)
t f : Fall time (time for output current to fall
from 90% to 10% of peak current)
Fig.11 Response time measurement circuit
2012.10.23 Rev.B
Notice
Notes
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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R1120A