Glossary of Terms - Advanced Protection Technologies
... Ground electrode - A conductor or group of conductors in contact with the earth that provides a low-impedance connection to the ground. Ground fault - Any undesirable current path from a current-carrying conductor to ground. Ground grid - A system of interconnected bare conductors arranged in a patt ...
... Ground electrode - A conductor or group of conductors in contact with the earth that provides a low-impedance connection to the ground. Ground fault - Any undesirable current path from a current-carrying conductor to ground. Ground grid - A system of interconnected bare conductors arranged in a patt ...
RA33H1516M1
... 2.RA series products (RF power amplifier modules) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality a ...
... 2.RA series products (RF power amplifier modules) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality a ...
Electronic Troubleshooting
... • See the example circuit on page 245 that uses the SG 1524 for PWM • The amplified error signal feeds the + input of the comparator and the the sawtooth OSC feeds the - input » When more positive than the sawtooth OSC output Q2 and Q1 are turned on. Else Q2 and Q1 are off » Note: Additional not sho ...
... • See the example circuit on page 245 that uses the SG 1524 for PWM • The amplified error signal feeds the + input of the comparator and the the sawtooth OSC feeds the - input » When more positive than the sawtooth OSC output Q2 and Q1 are turned on. Else Q2 and Q1 are off » Note: Additional not sho ...
AN-643 APPLICATION NOTE
... Temperature compensation circuitry is employed to ensure good log conformity to within 0.1 dB over a wide range of temperatures. The device is designed to operate with a single positive supply. However, it can be run with dual supplies. This feature provides flexibility, especially where the anode o ...
... Temperature compensation circuitry is employed to ensure good log conformity to within 0.1 dB over a wide range of temperatures. The device is designed to operate with a single positive supply. However, it can be run with dual supplies. This feature provides flexibility, especially where the anode o ...
Or, How to Design a Differential Signaling Circuit
... to as differential impedance, but in truth, it’s just the impedance. Whether the wires or twisted or not, this is still a twin lead transmission line. A termination for this type of transmission line is placed across the ends of the conductor pair. The termination could be a transformer as is the ca ...
... to as differential impedance, but in truth, it’s just the impedance. Whether the wires or twisted or not, this is still a twin lead transmission line. A termination for this type of transmission line is placed across the ends of the conductor pair. The termination could be a transformer as is the ca ...
DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
... input, complementary TTL output voltage comparator with improved characteristics over the SE529/NE529 for which it is a pin-for-pin replacement. The device has been optimized for greater speed performance and lower input offset voltage. Typically delay varies only 3 ns for over-drive variations of 5 ...
... input, complementary TTL output voltage comparator with improved characteristics over the SE529/NE529 for which it is a pin-for-pin replacement. The device has been optimized for greater speed performance and lower input offset voltage. Typically delay varies only 3 ns for over-drive variations of 5 ...
ST13009
... The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a hollow emitter structure to enhance switching speeds. ...
... The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a hollow emitter structure to enhance switching speeds. ...
Sub-1.0 pF Quad ESD Array
... present when discrete diodes are used to suppress ESD events across datalines and the supply rail. Discrete diodes with good transient power capability will have larger die and therefore higher capacitance. This capacitance becomes problematic as transmission frequencies increase. Reducing capacitan ...
... present when discrete diodes are used to suppress ESD events across datalines and the supply rail. Discrete diodes with good transient power capability will have larger die and therefore higher capacitance. This capacitance becomes problematic as transmission frequencies increase. Reducing capacitan ...
report - Auburn Engineering
... From the data in the table, the maximum energy savings we are able to achieve is almost 95%. V. CONCLUSION This project has examined the operation of a circuit in a subthreshold region. We have shown that a circuit can still function as its intended design when operated below the threshold voltage. ...
... From the data in the table, the maximum energy savings we are able to achieve is almost 95%. V. CONCLUSION This project has examined the operation of a circuit in a subthreshold region. We have shown that a circuit can still function as its intended design when operated below the threshold voltage. ...
+V in
... interactions are manufactured into or on top of a single chip of Silicon. that is why the name monolithic. The technology is ideally suitable when identical circuits are required in a very large number. The monolithic circuits are further classified into TWO categories namely “Bipolar” & “Unipol ...
... interactions are manufactured into or on top of a single chip of Silicon. that is why the name monolithic. The technology is ideally suitable when identical circuits are required in a very large number. The monolithic circuits are further classified into TWO categories namely “Bipolar” & “Unipol ...
II. MOS-NDR Device and Inverter DESIGN
... In recent years, several new applications based on resonant tunneling diode (RTD) have been reported [1]-[4]. The negative-differential-resistance (NDR) current-voltage (I-V) characteristics of the RTD devices have several advantages, and they may have high potential as functional devices due to the ...
... In recent years, several new applications based on resonant tunneling diode (RTD) have been reported [1]-[4]. The negative-differential-resistance (NDR) current-voltage (I-V) characteristics of the RTD devices have several advantages, and they may have high potential as functional devices due to the ...
Document
... amplifier circuit, with gain = and differential input resistance = 2· . The two amplifiers on the left are the buffers. With removed (open circuited), they are simple unity gain buffers; the circuit will work in that state, with gain simply equal to and high input impedance because of the buffers. T ...
... amplifier circuit, with gain = and differential input resistance = 2· . The two amplifiers on the left are the buffers. With removed (open circuited), they are simple unity gain buffers; the circuit will work in that state, with gain simply equal to and high input impedance because of the buffers. T ...
ULN2803 - Texas Instruments
... of a single transistor with a very-high current gain. The very high β allows for high output current drive with a very-low input current, essentially equating to operation with low GPIO voltages. The GPIO voltage is converted to base current through the 2.7-kΩ resistor connected between the input an ...
... of a single transistor with a very-high current gain. The very high β allows for high output current drive with a very-low input current, essentially equating to operation with low GPIO voltages. The GPIO voltage is converted to base current through the 2.7-kΩ resistor connected between the input an ...
NCV8852GEVB NCV8852 Evaluation Board User's Manual
... copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation o ...
... copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation o ...
Integrated circuit including logic array with distributed ground
... it is common for the FET’s in a microprocessor to be 25 either side as represented by blocks 22 and 23. Output drivers are represented by blocks 25 and 26. The ran organized into a programmable logic array (PLA), hav dom logic circuits common to such PLA’s to apply ing Decoder and ROM portions, with ...
... it is common for the FET’s in a microprocessor to be 25 either side as represented by blocks 22 and 23. Output drivers are represented by blocks 25 and 26. The ran organized into a programmable logic array (PLA), hav dom logic circuits common to such PLA’s to apply ing Decoder and ROM portions, with ...
TGA8334-SCC 数据资料DataSheet下载
... Small-signal gain is typically 8 dB with positive gain slope across the band. Input and output return loss is typically greater than 9.7 dB. Five 600um gatewidth FETs provide more than 26 dB output power at 1 dB gain compression at midband. Ground is provided to the circuitry through vias to the bac ...
... Small-signal gain is typically 8 dB with positive gain slope across the band. Input and output return loss is typically greater than 9.7 dB. Five 600um gatewidth FETs provide more than 26 dB output power at 1 dB gain compression at midband. Ground is provided to the circuitry through vias to the bac ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.