VOS618A Optocoupler, Phototransistor Output, Low Input Current
... • High common mode transient immunity ...
... • High common mode transient immunity ...
V IN - McGraw Hill Higher Education
... • Conventional current limiting won’t always protect a pass transistor. Foldback current limiting offers better protection. • Parallel pass transistors require emitter swamping resistors so they will share the load current. • A crowbar circuit provides overvoltage protection. ...
... • Conventional current limiting won’t always protect a pass transistor. Foldback current limiting offers better protection. • Parallel pass transistors require emitter swamping resistors so they will share the load current. • A crowbar circuit provides overvoltage protection. ...
Durham Research Online
... ionophore valinomycin onto the polymethylmethacrylate (PMMA) gate insulator of an ion-sensitive organic field-effect transistor (ISOFET) based on poly(3-hexylthiophene). The ionophore was deposited onto the PMMA using the LangmuirBlodgett (LB) technique; thin films based on pure valinomycin and thos ...
... ionophore valinomycin onto the polymethylmethacrylate (PMMA) gate insulator of an ion-sensitive organic field-effect transistor (ISOFET) based on poly(3-hexylthiophene). The ionophore was deposited onto the PMMA using the LangmuirBlodgett (LB) technique; thin films based on pure valinomycin and thos ...
INA217 - LAR
... Very low source impedance (less than 10Ω) can cause the INA217 to oscillate. This depends on circuit layout, signal source, and input cable characteristics. An input network consisting of a small inductor and resistor, as shown in Figure 2, can greatly reduce any tendency to oscillate. This is espec ...
... Very low source impedance (less than 10Ω) can cause the INA217 to oscillate. This depends on circuit layout, signal source, and input cable characteristics. An input network consisting of a small inductor and resistor, as shown in Figure 2, can greatly reduce any tendency to oscillate. This is espec ...
Application Tip - Beckwith Electric Co., Inc.
... load center using the input current (including angle) and the R & X values. The control automatically adjusts the bandcenter of the control to compensate the local voltage by the calculated voltage drop. (If the bandcenter setting is 120 V and LDC voltage drop calculation is 3 V, the new bandcenter ...
... load center using the input current (including angle) and the R & X values. The control automatically adjusts the bandcenter of the control to compensate the local voltage by the calculated voltage drop. (If the bandcenter setting is 120 V and LDC voltage drop calculation is 3 V, the new bandcenter ...
ELEC 350L Electronics I Laboratory Fall 2011
... ground, current flows through the LED, and the LED lights up. Conversely, if the output voltage of the op-amp is at VNEG, then the upper terminal of the LED is negative with respect to ground, current does not flow through the LED, and it remains off. (Recall that by definition the node voltage at t ...
... ground, current flows through the LED, and the LED lights up. Conversely, if the output voltage of the op-amp is at VNEG, then the upper terminal of the LED is negative with respect to ground, current does not flow through the LED, and it remains off. (Recall that by definition the node voltage at t ...
Voltage Reducer for Lithium-ion Polymer Four-Cell Batteries
... power to operate: 26 mA is drawn by the circuit for a LiPo battery voltage of 16.8 V, dropping to 19 mA at 16 V and 10 mA at 15 V just before the relay drops out. No current is drawn by the circuit once the relay drops out. Operation is completely automatic, and the voltage to the radio is not inter ...
... power to operate: 26 mA is drawn by the circuit for a LiPo battery voltage of 16.8 V, dropping to 19 mA at 16 V and 10 mA at 15 V just before the relay drops out. No current is drawn by the circuit once the relay drops out. Operation is completely automatic, and the voltage to the radio is not inter ...
PS21A7A
... 2 :To prevent surge destruction, the wiring between the smoothing capacitor and the P,N1 terminals should be as short as possible. Generally inserting a 0.1μ~0.22μF snubber capacitor C3 between the P-N1 terminals is recommended. 3 :The time constant R1C4 of RC filter for preventing protection circui ...
... 2 :To prevent surge destruction, the wiring between the smoothing capacitor and the P,N1 terminals should be as short as possible. Generally inserting a 0.1μ~0.22μF snubber capacitor C3 between the P-N1 terminals is recommended. 3 :The time constant R1C4 of RC filter for preventing protection circui ...
FPD7612P70 LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Features
... Example: For a 65°C carrier temperature: PTOT =470mW-(3x(65-22))=321mW ...
... Example: For a 65°C carrier temperature: PTOT =470mW-(3x(65-22))=321mW ...
The Effects of Drain-Bias on the Threshold Voltage Instability in
... the drain bias effect in OTFTs with organic dielectric had been studied to discuss its influence on ion migration [5], the effect on OTFTs with stable dielectric had not been carefully investigated before. This letter clearly demonstrates that a modified BSE model (including drain-bias effects) in a ...
... the drain bias effect in OTFTs with organic dielectric had been studied to discuss its influence on ion migration [5], the effect on OTFTs with stable dielectric had not been carefully investigated before. This letter clearly demonstrates that a modified BSE model (including drain-bias effects) in a ...
NUD4011 Low Current LED Driver
... Industrial: General Lighting Applications and Small Appliances Automotive: Tail Lights, Directional Lights, Back−up Light, Dome Light ...
... Industrial: General Lighting Applications and Small Appliances Automotive: Tail Lights, Directional Lights, Back−up Light, Dome Light ...
Saturation Region - Electrical and Computer Engineering
... I is exponentially dependent on Vgs. Id0 and n are experimentally determined, k is Boltzmann’s constant and T is temperature. Source of standby power consumption in portable devices. Some extremely low-power circuits use sub-threshold conduction, e.g., digital watch. ...
... I is exponentially dependent on Vgs. Id0 and n are experimentally determined, k is Boltzmann’s constant and T is temperature. Source of standby power consumption in portable devices. Some extremely low-power circuits use sub-threshold conduction, e.g., digital watch. ...
LEP 4.1.10 Characteristic curves of electron tubes (diode
... the anode voltage at different heater currents and to plot it on a graph. To calculate the cathode temperatures and electron velocities from the initial current characteristics. 2. To record the anode current of a triode as a function of the grid voltage at different anode voltages. To determine the ...
... the anode voltage at different heater currents and to plot it on a graph. To calculate the cathode temperatures and electron velocities from the initial current characteristics. 2. To record the anode current of a triode as a function of the grid voltage at different anode voltages. To determine the ...
RHRP3060 RHRP3060 — Hyperfast Diode 30 A, 600 V Hyperfast Diodes Features
... Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard perform ...
... Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard perform ...
iSOLATeD DC/DC COnTrOLLerS fOr inTerMeDiATe BuS vOLTAgeS
... MOSFET drivers allow each IC to drive both the low- and high-side switching devices in a half-bridge converter. The oscillator frequency is programmable from 200 kHz to 1 MHz, the widest such range in the industry, and can be synchronized to an external sync source. Self-driven synchronous rectifica ...
... MOSFET drivers allow each IC to drive both the low- and high-side switching devices in a half-bridge converter. The oscillator frequency is programmable from 200 kHz to 1 MHz, the widest such range in the industry, and can be synchronized to an external sync source. Self-driven synchronous rectifica ...
BDTIC Measuring currents in drive technology with microcontrollers
... be wired up via a connection matrix. Fast state machines can be implemented in hardware in this way, e.g. for emergency shut-offs. ...
... be wired up via a connection matrix. Fast state machines can be implemented in hardware in this way, e.g. for emergency shut-offs. ...
Electronics - Solapur University
... 4) Study of RS, D and JK Flip flop 5) Study of Counters (divided by 2, 5 and 10) using IC-7490 6) Study of Left shift and Johnson counter using IC 7495 7) Study Right shift and Ring counter using IC7495 8) Study of Multiplexer and Demultiplexer 9) Study of Encoder (74148) and Decoder (74138) 10) Stu ...
... 4) Study of RS, D and JK Flip flop 5) Study of Counters (divided by 2, 5 and 10) using IC-7490 6) Study of Left shift and Johnson counter using IC 7495 7) Study Right shift and Ring counter using IC7495 8) Study of Multiplexer and Demultiplexer 9) Study of Encoder (74148) and Decoder (74138) 10) Stu ...
Experiment 2: Kirchhoff`s Law and Superposition Theorem
... • The electric circuit as shown in the Fig. 1. Use single voltage source US1 (turn the switch S1 and S2 to the left), measure the branch current and resistances with ammeter and voltmeter and then record them to the Table 2. • Use the single voltage source US2 (turn the switch S1 and S2 to the right ...
... • The electric circuit as shown in the Fig. 1. Use single voltage source US1 (turn the switch S1 and S2 to the left), measure the branch current and resistances with ammeter and voltmeter and then record them to the Table 2. • Use the single voltage source US2 (turn the switch S1 and S2 to the right ...
Transformers
... frequency--is applied to the other winding. Voltage, current, and power at the terminals of this winding are measured. The open circuit voltage of the second winding is also measured, and from this measurement a check on the turns ratio can be obtained. It is usually convenient to apply the test vol ...
... frequency--is applied to the other winding. Voltage, current, and power at the terminals of this winding are measured. The open circuit voltage of the second winding is also measured, and from this measurement a check on the turns ratio can be obtained. It is usually convenient to apply the test vol ...
LDS8641 - IXYS Power
... photo flash applications. The LEDs current is factory programmed at 200 mA for both channels. Consult factory about other current values. Every LED may be factory programmed separately in the range from 25 to 200 mA in 25 mA steps. ...
... photo flash applications. The LEDs current is factory programmed at 200 mA for both channels. Consult factory about other current values. Every LED may be factory programmed separately in the range from 25 to 200 mA in 25 mA steps. ...
RURG5060_F085 50A, 600V Ultrafast Rectifier RURG5060_F085 50A, 600V Features
... The RURG5060_F085 is an ultrafast diode with soft recovery characteristics (trr< 90ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switchi ...
... The RURG5060_F085 is an ultrafast diode with soft recovery characteristics (trr< 90ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switchi ...
Integrated Charge Controller for Lead
... The IC can support a wide range of battery capacities and charging currents, limited only by the selection of the external pass transistor. The versatile driver for the external pass transistor supports both NPN and PNP types and provides at least 25mA of base drive. In addition to the voltage- and ...
... The IC can support a wide range of battery capacities and charging currents, limited only by the selection of the external pass transistor. The versatile driver for the external pass transistor supports both NPN and PNP types and provides at least 25mA of base drive. In addition to the voltage- and ...
report
... bypassing footer switch to reach permanent VSS. In the following part of the paper, we shall focus on header switch design and implementations. This work has many transistors to use in the sleep transistor network so considering the area penalty; it is decided to use a footer type of transistor stru ...
... bypassing footer switch to reach permanent VSS. In the following part of the paper, we shall focus on header switch design and implementations. This work has many transistors to use in the sleep transistor network so considering the area penalty; it is decided to use a footer type of transistor stru ...
LMD18200 3A, 55V H-Bridge 3A, 55V
... and shuts off the power device as quickly as possible in the event of an overload condition. In a typical motor driving application the most common overload faults are caused by shorted motor windings and locked rotors. Under these conditions the inductance of the motor (as well as any series induct ...
... and shuts off the power device as quickly as possible in the event of an overload condition. In a typical motor driving application the most common overload faults are caused by shorted motor windings and locked rotors. Under these conditions the inductance of the motor (as well as any series induct ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.