a AN-591 APPLICATION NOTE ADM1070 Hot Swap Controller
... it again quickly). Not all hot swap supervisory solutions monitor the load current continuously. In these cases, the GATE voltage is simply slew rate limited to control the rate at which the load current is allowed to ramp up at startup. ...
... it again quickly). Not all hot swap supervisory solutions monitor the load current continuously. In these cases, the GATE voltage is simply slew rate limited to control the rate at which the load current is allowed to ramp up at startup. ...
stepper motors and drive methods
... attraction or repulsion of magnetic structures and derive their torque solely on the change of reluctance of a magnetic circuit, whereby a conventional motor derives its torque from the interaction of current carrying conductors with magnetic fields. A stepper motor cannot draw a higher current in a ...
... attraction or repulsion of magnetic structures and derive their torque solely on the change of reluctance of a magnetic circuit, whereby a conventional motor derives its torque from the interaction of current carrying conductors with magnetic fields. A stepper motor cannot draw a higher current in a ...
NE5532,NE5532A Texas Instruments Datasheet
... any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order ...
... any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order ...
AiT Semiconductor Inc. AiT Semiconductor Inc. DESCRIPTION
... is achieved over Li-Ion battery voltage range by selecting the proper gain based on the LED forward voltage requirements. The A8440 has a fixed 1MHz switching frequency, consuming less than 1uA of supply current when shutdown. The A8440 LED dimming can be accomplished by several methods including us ...
... is achieved over Li-Ion battery voltage range by selecting the proper gain based on the LED forward voltage requirements. The A8440 has a fixed 1MHz switching frequency, consuming less than 1uA of supply current when shutdown. The A8440 LED dimming can be accomplished by several methods including us ...
ﺟﺎﻣﻌﺔ ﺑﻧﮭﺎ ﮐﻟﯾﺔ اﻟﮭﻧدﺳﺔ ﺑﺑﻧﮭﺎ ﻗﺳم اﻟﮭﻧدﺳﺔ اﻟﮐﮭرﺑﯾ
... A GTO can operate safely in the “reverse avalanche” region for a short time provided the gate .cathode junction is reverse biased The switching delay times and energy loss of a GTO can be reduced by increasing the gate • .current magnitude and its rate of rise The maximum turn off anode current ...
... A GTO can operate safely in the “reverse avalanche” region for a short time provided the gate .cathode junction is reverse biased The switching delay times and energy loss of a GTO can be reduced by increasing the gate • .current magnitude and its rate of rise The maximum turn off anode current ...
What are clippers circuits?
... of the input signal and allow the negative portions of the signal to pass through. Figure below shows the input and output signal along with the positive clipper. The positive cycle is completely clipped off by the clipper. ...
... of the input signal and allow the negative portions of the signal to pass through. Figure below shows the input and output signal along with the positive clipper. The positive cycle is completely clipped off by the clipper. ...
SBF5089Z 数据资料DataSheet下载
... RFMD’s SBF5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5GHz with excellent thermal performance. The heterojunction increases breakdown voltage and mini ...
... RFMD’s SBF5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5GHz with excellent thermal performance. The heterojunction increases breakdown voltage and mini ...
AND Gate - Book Spar
... o When A is low the corresponding diode will be ON and, B is high so the diode corresponds to the input B will be OFF. o Now we can replace the ON diode by the short circuit equivalent; hence point X is connected to ground and the output C=0V. ...
... o When A is low the corresponding diode will be ON and, B is high so the diode corresponds to the input B will be OFF. o Now we can replace the ON diode by the short circuit equivalent; hence point X is connected to ground and the output C=0V. ...
DCM2031, 2033, 2039 Digital Clampmeters
... measurements to 1000 A but has an over-range capability of up to 2000 A. As the clamp incorporates Hall Effect technology it can measure d.c. currents as well as a.c. currents. Additional features are the peak hold button and the frequency counter which will measure frequencies between 20 Hz and 10 ...
... measurements to 1000 A but has an over-range capability of up to 2000 A. As the clamp incorporates Hall Effect technology it can measure d.c. currents as well as a.c. currents. Additional features are the peak hold button and the frequency counter which will measure frequencies between 20 Hz and 10 ...
How Series and Parallel Circuits Differ
... in which the parts are arranged so that electrons can flow along more than one path. The points where a circuit divides into different paths or where paths combine are called junction points An interruption or break in one pathway does not affect the other pathways in the circuit. ...
... in which the parts are arranged so that electrons can flow along more than one path. The points where a circuit divides into different paths or where paths combine are called junction points An interruption or break in one pathway does not affect the other pathways in the circuit. ...
ATF-55143 Application Note 1376
... require a negative gate voltage. A depletion mode PHEMT pulls maximum drain current when Vgs = 0V, whereas an enhancement mode PHEMT pulls nearly zero drain current when Vgs=0V. The gate must be made positive with respect to the source for the enhancement mode PHEMT to begin pulling drain current. I ...
... require a negative gate voltage. A depletion mode PHEMT pulls maximum drain current when Vgs = 0V, whereas an enhancement mode PHEMT pulls nearly zero drain current when Vgs=0V. The gate must be made positive with respect to the source for the enhancement mode PHEMT to begin pulling drain current. I ...
Chapter 11 - An
... IH. There are two ways to drop the SCR out of conduction: anode current interruption and forced commutation. 1) Anode current can be interrupted by breaking the anode current path (shown here) or providing a path around the SCRÆ dropping the anode voltage to the point that IA < IH. 2) Force commutat ...
... IH. There are two ways to drop the SCR out of conduction: anode current interruption and forced commutation. 1) Anode current can be interrupted by breaking the anode current path (shown here) or providing a path around the SCRÆ dropping the anode voltage to the point that IA < IH. 2) Force commutat ...
Experiment 2 - Single Phase Transformer
... The windings of a standard single-phase transformer are called the primary winding and the secondary winding. The primary winding is the power input winding and this is the side that is connected to the ac power source. The secondary winding is connected to the load and is physically and electricall ...
... The windings of a standard single-phase transformer are called the primary winding and the secondary winding. The primary winding is the power input winding and this is the side that is connected to the ac power source. The secondary winding is connected to the load and is physically and electricall ...
design solutions - Maxim Integrated
... for each solution. As expected, the efficiency of the two architectures is similar when VBAT is below or near the LDO output voltage. Outside this range, and for the entire time VBAT is above the LDO output voltage, the efficiency of the buck-boost (above 90%) is far superior to that of the bypass-b ...
... for each solution. As expected, the efficiency of the two architectures is similar when VBAT is below or near the LDO output voltage. Outside this range, and for the entire time VBAT is above the LDO output voltage, the efficiency of the buck-boost (above 90%) is far superior to that of the bypass-b ...
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... RF power FETs require forward bias for optimum performance. The value of quiescent drain current (IDQ) is not critical for many applications. The MRF275G was characterized at IDQ = 100 mA, each side, which is the suggested minimum value of IDQ. For special applications such as linear amplification, ...
... RF power FETs require forward bias for optimum performance. The value of quiescent drain current (IDQ) is not critical for many applications. The MRF275G was characterized at IDQ = 100 mA, each side, which is the suggested minimum value of IDQ. For special applications such as linear amplification, ...
Chapter 8 Semiconductor Memories
... pass transistors are activated by the word line signal S, and that the clk signal is high so that the transistor M3 is turned on. Now, higher voltage on the gate of M1 transistor than on the gate of M2 starts the latching operation which pulls the VC voltage further down switching the transistor M2 ...
... pass transistors are activated by the word line signal S, and that the clk signal is high so that the transistor M3 is turned on. Now, higher voltage on the gate of M1 transistor than on the gate of M2 starts the latching operation which pulls the VC voltage further down switching the transistor M2 ...
V GS(on)
... • No p-channel exists between the source and drain. • This transistor is normally off when the gate voltage is zero. • A negative gate voltage attracts holes into the n-region to create an p-type inversion layer and turns the device on. ...
... • No p-channel exists between the source and drain. • This transistor is normally off when the gate voltage is zero. • A negative gate voltage attracts holes into the n-region to create an p-type inversion layer and turns the device on. ...
EMI4193 数据资料DataSheet下载
... are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor doe ...
... are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor doe ...
MID400 AC Line Monitor Logic-Out Device
... The input of the MID400 consists of two back-to-back LED diodes which will accept and convert alternating currents into light energy. An integrated photo diodedetector amplifier forms the output network. Optical coupling between input and output provides 2500 V$&RMS voltage isolation. A very high ...
... The input of the MID400 consists of two back-to-back LED diodes which will accept and convert alternating currents into light energy. An integrated photo diodedetector amplifier forms the output network. Optical coupling between input and output provides 2500 V$&RMS voltage isolation. A very high ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.