AP3171 N E W P R O D U C T Description Features Pin
... configuration to backwards compatible to the existing devices that are not compatible to Qualcomm QC 2.0. ...
... configuration to backwards compatible to the existing devices that are not compatible to Qualcomm QC 2.0. ...
SFH620AA, SFH620AGB
... Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use ...
... Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use ...
Capacitor Self
... measure a noise voltage as high as 0.1 1V / Hz even if the lightning is over Brazil (I am serious!). If you have a system with a bandwidth of 4 kHz, the total noise voltage can be as high as 6-60 µV. Between 30 MHz and 800 MHz, Galactic noise dominates our world outside cities and suburban areas. ...
... measure a noise voltage as high as 0.1 1V / Hz even if the lightning is over Brazil (I am serious!). If you have a system with a bandwidth of 4 kHz, the total noise voltage can be as high as 6-60 µV. Between 30 MHz and 800 MHz, Galactic noise dominates our world outside cities and suburban areas. ...
Computer Netwroks
... photometry and optical communication applications. Schottky diode: In these, there is a thin gold coating on the N-type material to ensure ...
... photometry and optical communication applications. Schottky diode: In these, there is a thin gold coating on the N-type material to ensure ...
FSQ0370RNA, FSQ0370RLA Green Mode Fairchild Power Switch (FPS™) FSQ0370RNA / FSQ0370RLA
... the SenseFET when the maximum PWM duty cycle is attained. If the output consumes more than this maximum power, the output voltage (VO) decreases below its nominal voltage. This reduces the current through the optocoupler LED, which also reduces the optocoupler transistor current, thus increasing the ...
... the SenseFET when the maximum PWM duty cycle is attained. If the output consumes more than this maximum power, the output voltage (VO) decreases below its nominal voltage. This reduces the current through the optocoupler LED, which also reduces the optocoupler transistor current, thus increasing the ...
Fabrication of Metallic Electrodes with Nanometer
... As described previously, electromigration of metal atoms has long been known to be the major failure mode of narrow conduction channels,21 and therefore the observation of nanowire breakage due to large current flow is not surprising in itself. A remarkable feature of the breaking process is, howeve ...
... As described previously, electromigration of metal atoms has long been known to be the major failure mode of narrow conduction channels,21 and therefore the observation of nanowire breakage due to large current flow is not surprising in itself. A remarkable feature of the breaking process is, howeve ...
d) 16 anodes and 32 common cathodes
... 2) 1.2V for the darlington common cathode drivers (ULN2803) 3) 200mV for the common anode drivers (P-FETs or transistors) That P-FET Rds spec is 'drain source resistance' measured in milliohms. You'll be using TTL signal levels on the gate which is Vgs = 4.5v so your Rds should be something like 52 ...
... 2) 1.2V for the darlington common cathode drivers (ULN2803) 3) 200mV for the common anode drivers (P-FETs or transistors) That P-FET Rds spec is 'drain source resistance' measured in milliohms. You'll be using TTL signal levels on the gate which is Vgs = 4.5v so your Rds should be something like 52 ...
Synchronous vs. Aynchronous Buck Regulators - Digi
... Advantages and disadvantages of these two topologies The asynchronous topology uses just one MOSFET for the top side as the control switch. There is no socalled shoot-through issue. The IC tends to be smaller and relatively inexpensive. The use of an external diode in most cases eliminates the need ...
... Advantages and disadvantages of these two topologies The asynchronous topology uses just one MOSFET for the top side as the control switch. There is no socalled shoot-through issue. The IC tends to be smaller and relatively inexpensive. The use of an external diode in most cases eliminates the need ...
Data Sheet General Description Features
... brightness can be adjusted from 1%*ICHX_MAX to 100%*ICHX_MAX(@fDimming=2kHz). During the "high level" time of the PWM signal, the LED turns on and the 100% current flows through LED. During the "low level" time of the PWM signal, the LED turns off and almost no current flows through LED. So the aver ...
... brightness can be adjusted from 1%*ICHX_MAX to 100%*ICHX_MAX(@fDimming=2kHz). During the "high level" time of the PWM signal, the LED turns on and the 100% current flows through LED. During the "low level" time of the PWM signal, the LED turns off and almost no current flows through LED. So the aver ...
High Efficiency NPC Multilevel Converters using Super
... devices cannot readily be used as direct replacements for IGBTs in locations where they have to provide a freewheeling function as well as operating as a forward switch. Silicon Carbide (SiC) MOSFETs draw little reverse recovery charge and have a low Coss [3]. However, commercially-available devices ...
... devices cannot readily be used as direct replacements for IGBTs in locations where they have to provide a freewheeling function as well as operating as a forward switch. Silicon Carbide (SiC) MOSFETs draw little reverse recovery charge and have a low Coss [3]. However, commercially-available devices ...
STC03DE170HP
... Hybrid emitter switched bipolar transistor ESBT® 1700V - 3A - 0.33 W Features VCS(ON) ...
... Hybrid emitter switched bipolar transistor ESBT® 1700V - 3A - 0.33 W Features VCS(ON) ...
LATCHES AND FILP FLOPS
... The tunnel diode's n and p regions are heavily doped, which results in an extremely narrow depletion region. Thus, electrons can "tunnel" through the pn junction at very low forward-bias voltages, and the diode acts as a conductor. This is shown by the part of its characteristic curve, between poin ...
... The tunnel diode's n and p regions are heavily doped, which results in an extremely narrow depletion region. Thus, electrons can "tunnel" through the pn junction at very low forward-bias voltages, and the diode acts as a conductor. This is shown by the part of its characteristic curve, between poin ...
FSB137HL ™) Green-Mode Fairchild Power Switch (FPS FS
... minimizes losses in the EMI filter stage by eliminating the X-cap discharge resistors while meeting IEC61010-1 safety requirements. mWSaver™ Green Mode gradually decreases switching frequency as load decreases to minimize switching losses. Proprietary asynchronous jitter decreases EMI emission and b ...
... minimizes losses in the EMI filter stage by eliminating the X-cap discharge resistors while meeting IEC61010-1 safety requirements. mWSaver™ Green Mode gradually decreases switching frequency as load decreases to minimize switching losses. Proprietary asynchronous jitter decreases EMI emission and b ...
AN-776 20 Watt Simple Switcher Forward Converter (Rev. A)
... Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain t ...
... Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain t ...
Diode Turn-On Time Induced Failures in Switching Regulators
... to turn on and clamp at its forward voltage drop. Historically, this extremely short time, units of nanoseconds, has been so small that user and vendor alike have essentially ignored it. It is rarely discussed and almost never specified. Recently, switching regulator clock rate and transition time h ...
... to turn on and clamp at its forward voltage drop. Historically, this extremely short time, units of nanoseconds, has been so small that user and vendor alike have essentially ignored it. It is rarely discussed and almost never specified. Recently, switching regulator clock rate and transition time h ...
data sheet data sheet - National Model Railroad Association
... allowed us to add realistic lighting to our modeling efforts. Such lamps, however, have one draw back, they still produce more heat than light, and this prevents their use in any kind of plastic model. Modern electronics has provided use with an alternative, which greatly decreases the heat problem ...
... allowed us to add realistic lighting to our modeling efforts. Such lamps, however, have one draw back, they still produce more heat than light, and this prevents their use in any kind of plastic model. Modern electronics has provided use with an alternative, which greatly decreases the heat problem ...
Boost Converter Design
... available and usually perfect for low voltage dc/dc converters. The above parameters represent the bare minimum characteristics of the MOSFET. However, to get a good design, we must ensure that the losses in the MOSFET are as low as possible. The MOSFET switch presents 2 losses in the circuit: switc ...
... available and usually perfect for low voltage dc/dc converters. The above parameters represent the bare minimum characteristics of the MOSFET. However, to get a good design, we must ensure that the losses in the MOSFET are as low as possible. The MOSFET switch presents 2 losses in the circuit: switc ...
ULN2002A/ ULN2003A/ ULN2004A Description Pin Assignments
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
Tunable supercurrent in superconductor/normal metal
... junction, corresponds now to ϕ = π at large control voltages, resulting in a current–phase relation given by I = Ic sin(ϕ + π ), hence the name π -junction. This mechanism should not be confused with the π-junction behavior induced by magnetic impurities [17, 18] or resulting from the symmetry of th ...
... junction, corresponds now to ϕ = π at large control voltages, resulting in a current–phase relation given by I = Ic sin(ϕ + π ), hence the name π -junction. This mechanism should not be confused with the π-junction behavior induced by magnetic impurities [17, 18] or resulting from the symmetry of th ...
FSL137MRIN ™) Green-Mode Fairchild Power Switch (FPS
... an unexpected abnormal event. In this situation, the protection circuit should trigger to protect the SMPS. However, even when the SMPS is in normal operation, the overload protection circuit can be triggered during the load transition. To avoid this undesired operation, the overload protection circ ...
... an unexpected abnormal event. In this situation, the protection circuit should trigger to protect the SMPS. However, even when the SMPS is in normal operation, the overload protection circuit can be triggered during the load transition. To avoid this undesired operation, the overload protection circ ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.