LOW POWER DUAL OPERATIONAL AMPLIFIERS Description
... direct short-circuits on more than one amplifier at a time will increase the total IC power dissipation to destructive levels, if not properly protected with external dissipation limiting resistors in series with the output leads of the amplifiers. The larger value of output source current which is ...
... direct short-circuits on more than one amplifier at a time will increase the total IC power dissipation to destructive levels, if not properly protected with external dissipation limiting resistors in series with the output leads of the amplifiers. The larger value of output source current which is ...
A Mathematical Descr..
... inequality vDS vGS Vt for MOSFET SAT. (more on this later!). Now, we are tempted to make another analogy between base current iB and gate current iG, but here the analogies end! Recall iG =0 always, but for BJTs we find that iB is not equal to zero (generally). ...
... inequality vDS vGS Vt for MOSFET SAT. (more on this later!). Now, we are tempted to make another analogy between base current iB and gate current iG, but here the analogies end! Recall iG =0 always, but for BJTs we find that iB is not equal to zero (generally). ...
MAX9938 1µA, 4-Bump UCSP/SOT23, Precision Current-Sense Amplifier General Description
... At high current levels, the I2R losses in RSENSE can be significant. Take this into consideration when choosing the resistor value and its power dissipation (wattage) rating. Also, the sense resistor’s value might drift if it is allowed to heat up excessively. The precision VOS of the MAX9938 allows ...
... At high current levels, the I2R losses in RSENSE can be significant. Take this into consideration when choosing the resistor value and its power dissipation (wattage) rating. Also, the sense resistor’s value might drift if it is allowed to heat up excessively. The precision VOS of the MAX9938 allows ...
PAM2306 Description Features Pin Assignments Applications
... Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use ...
... Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use ...
ZABG6002
... Depletion mode FETs require a negative voltage bias supply when operated in grounded source circuits. The ZABG6002 includes an integrated low noise switched capacitor DC-DC converter generating a regulated output of 2.5V to allow single supply operation. To aid efficiency and 3.3V systems the ZABG60 ...
... Depletion mode FETs require a negative voltage bias supply when operated in grounded source circuits. The ZABG6002 includes an integrated low noise switched capacitor DC-DC converter generating a regulated output of 2.5V to allow single supply operation. To aid efficiency and 3.3V systems the ZABG60 ...
RSH065N06
... The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from RO ...
... The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from RO ...
CHAPTER 1: INTRODUCTION
... ability of a design to meet this objective is quantified in the noise factor of the amplifier which is defined as the ratio of the signal-to-noise ratio at the output of the amplifier to the signal-to-noise ratio at the input. It is well known that the first amplification stage dominates the total n ...
... ability of a design to meet this objective is quantified in the noise factor of the amplifier which is defined as the ratio of the signal-to-noise ratio at the output of the amplifier to the signal-to-noise ratio at the input. It is well known that the first amplification stage dominates the total n ...
Collector-Injection Modulator
... controlled by changes in the control grid bias, the gain of the tube requires only a low-level modulating signal. Even when the input signals are at these low levels, occasional modulation voltage peaks will occur that will cause V1 to saturate. This creates distortion in the output. Care must be ta ...
... controlled by changes in the control grid bias, the gain of the tube requires only a low-level modulating signal. Even when the input signals are at these low levels, occasional modulation voltage peaks will occur that will cause V1 to saturate. This creates distortion in the output. Care must be ta ...
RSH070P05
... The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from RO ...
... The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from RO ...
PPT1
... that multiplication by per phase power base gives us per phase power, and multiplication by 3 phase power base gives us 3 phase power, which is what we want. Previously, we obtained 18,528 watts and 148,224 vars. Ploss power base S3 Ploss , pu (30,000)0.6167 18,501 watts Qloss power base ...
... that multiplication by per phase power base gives us per phase power, and multiplication by 3 phase power base gives us 3 phase power, which is what we want. Previously, we obtained 18,528 watts and 148,224 vars. Ploss power base S3 Ploss , pu (30,000)0.6167 18,501 watts Qloss power base ...
USB-Powered Li+ Charger General Description Features
... maximum utilization of the battery capacity. The charger uses an internal FET to deliver up to 500mA charging current to the battery. The device can be configured for either a 4.1V or 4.2V battery, using the SELV input. The SELI input sets the charge current to either 100mA or 500mA. An open-drain o ...
... maximum utilization of the battery capacity. The charger uses an internal FET to deliver up to 500mA charging current to the battery. The device can be configured for either a 4.1V or 4.2V battery, using the SELV input. The SELI input sets the charge current to either 100mA or 500mA. An open-drain o ...
High Speed PWM Controller (Rev. A)
... TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide adequate design and operating safeguar ...
... TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide adequate design and operating safeguar ...
LMC6462 Dual/LMC6464 Quad Micropower, Rail-to
... Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical ...
... Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical ...
LM723QML Voltage Regulator (Rev. A)
... 150 mA Output Current Without External Pass Transistor Output Currents in Excess of 10A Possible by Adding External Transistors Input Voltage 40V Max Output Voltage Adjustable from 2V to 37V Can be Used as Either a Linear or a Switching Regulator ...
... 150 mA Output Current Without External Pass Transistor Output Currents in Excess of 10A Possible by Adding External Transistors Input Voltage 40V Max Output Voltage Adjustable from 2V to 37V Can be Used as Either a Linear or a Switching Regulator ...
AP6508 500kHz 21V 3A SYNCHRONOUS DC/DC BUCK CONVERTER Description
... 2. Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may ...
... 2. Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may ...
LT1580(-2.5) - Linear Technology
... regulators have become more common in desktop computer systems as microprocessor manufacturers have moved away from 5V only CPUs. A wide range of supply requirements exists today with new voltages just over the horizon. In many cases the input-output differential is very small, effectively disqualif ...
... regulators have become more common in desktop computer systems as microprocessor manufacturers have moved away from 5V only CPUs. A wide range of supply requirements exists today with new voltages just over the horizon. In many cases the input-output differential is very small, effectively disqualif ...
DSS60601MZ4 Features Mechanical Data
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
MAX16128/MAX16129 - Load-Dump/Reverse
... In the last case, cold-crank protection is enabled as long as VOUT is higher than 90% of VIN (with a 3% hysteresis) and VIN is higher than the undervoltage threshold. When the monitored input voltage falls below the falling coldcrank fault threshold (VIN < VCCK), the GATE is pulled down and FLAG is ...
... In the last case, cold-crank protection is enabled as long as VOUT is higher than 90% of VIN (with a 3% hysteresis) and VIN is higher than the undervoltage threshold. When the monitored input voltage falls below the falling coldcrank fault threshold (VIN < VCCK), the GATE is pulled down and FLAG is ...
Inductor Discharging
... • Opening of inductive circuit may cause voltage spikes in thousands of volts range. ...
... • Opening of inductive circuit may cause voltage spikes in thousands of volts range. ...
revised manuscript 27.8.09
... In an electrode–electrolyte system, charges accumulate at the electrode and the surface area of the electrolyte. Due to the abundance of charge carriers in the electrode, the ions are immobile and fixed on the surface of the electrode. Helmholtz modeled this behavior as a pure capacitor, marked as ...
... In an electrode–electrolyte system, charges accumulate at the electrode and the surface area of the electrolyte. Due to the abundance of charge carriers in the electrode, the ions are immobile and fixed on the surface of the electrode. Helmholtz modeled this behavior as a pure capacitor, marked as ...
Zhou 2010
... film. Table II shows the TFT mobility values for three different thicknesses 共20, 80, and 140 nm兲, and as we can see, the values are very close. It proves that the thin residual layer in perpendicular devices was not the reason for the low value of charge mobility of nanograting FETs in the perpendi ...
... film. Table II shows the TFT mobility values for three different thicknesses 共20, 80, and 140 nm兲, and as we can see, the values are very close. It proves that the thin residual layer in perpendicular devices was not the reason for the low value of charge mobility of nanograting FETs in the perpendi ...
Q-Astec - First transient power converter using switched
... Continued silicon integration, drive to higher frequencies and possibly an increased number of phases will continue to be a trend regardless of the architecture utilized Switched Current Techniques offer an alternative approach An infinite transient response possible, in theory at least ...
... Continued silicon integration, drive to higher frequencies and possibly an increased number of phases will continue to be a trend regardless of the architecture utilized Switched Current Techniques offer an alternative approach An infinite transient response possible, in theory at least ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.