• Study Resource
  • Explore
    • Arts & Humanities
    • Business
    • Engineering & Technology
    • Foreign Language
    • History
    • Math
    • Science
    • Social Science

    Top subcategories

    • Advanced Math
    • Algebra
    • Basic Math
    • Calculus
    • Geometry
    • Linear Algebra
    • Pre-Algebra
    • Pre-Calculus
    • Statistics And Probability
    • Trigonometry
    • other →

    Top subcategories

    • Astronomy
    • Astrophysics
    • Biology
    • Chemistry
    • Earth Science
    • Environmental Science
    • Health Science
    • Physics
    • other →

    Top subcategories

    • Anthropology
    • Law
    • Political Science
    • Psychology
    • Sociology
    • other →

    Top subcategories

    • Accounting
    • Economics
    • Finance
    • Management
    • other →

    Top subcategories

    • Aerospace Engineering
    • Bioengineering
    • Chemical Engineering
    • Civil Engineering
    • Computer Science
    • Electrical Engineering
    • Industrial Engineering
    • Mechanical Engineering
    • Web Design
    • other →

    Top subcategories

    • Architecture
    • Communications
    • English
    • Gender Studies
    • Music
    • Performing Arts
    • Philosophy
    • Religious Studies
    • Writing
    • other →

    Top subcategories

    • Ancient History
    • European History
    • US History
    • World History
    • other →

    Top subcategories

    • Croatian
    • Czech
    • Finnish
    • Greek
    • Hindi
    • Japanese
    • Korean
    • Persian
    • Swedish
    • Turkish
    • other →
 
Profile Documents Logout
Upload
TPS54372 数据资料 dataSheet 下载
TPS54372 数据资料 dataSheet 下载

... Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. SWIFT, PowerPAD are trademarks of Texas Instruments. ...
TransTube®
TransTube®

IOSR Journal of Electronics and Communication Engineering (IOSR-JECE)
IOSR Journal of Electronics and Communication Engineering (IOSR-JECE)

... The increasing speed and complexity of today’s designs implies a significant increase in the power consumption of very-large-scale integration circuits. Voltage is increased to attain higher speed of operation with the penalty of increased power consumption. To meet this challenge, researchers have ...
CoolRunner-II I/O Characteristics Summary
CoolRunner-II I/O Characteristics Summary

... software. Doing so will ensure the correct transistor configuration, and will result in appropriate rise and fall times as well as appropriate current drive. ...
MAX8869 1A, Microcap, Low-Dropout, Linear Regulator General Description
MAX8869 1A, Microcap, Low-Dropout, Linear Regulator General Description

... low 500µA supply current, making this regulator useful for networking and telecom hardware as well as battery-operated equipment. Other features include softstart, low-power shutdown, short-circuit protection, and thermal shutdown protection. The MAX8869 is available in a 1.5W, 16-pin TSSOP package, ...
500mA LDO in 1.6mm x 1.6mm Package
500mA LDO in 1.6mm x 1.6mm Package

... The MIC5353 is a high-performance, single-output, ultralow LDO (ULDO™) regulator, offering a low total output noise of 30μVRMS. The MIC5353 is capable of sourcing 500mA output current and offers high-PSRR and lowoutput noise, making it an ideal solution for RF applications. The MIC5353 provides 2% a ...
sc2440tetrt
sc2440tetrt

FAN5234  Dual Mobile-Friendly PWM / PFM Controller FA
FAN5234 Dual Mobile-Friendly PWM / PFM Controller FA

... current. When using the MOSFET as the sensing element, the variation of RDS(ON) causes proportional variation in ISNS. This value varies from device to device and has a typical junction temperature coefficient of about 0.4%/°C (consult the MOSFET datasheet for actual values), the actual current limi ...
Medium Voltage Switchgear
Medium Voltage Switchgear

... The iCB series comprises embedded pole type vacuum circuit breakers for medium voltage and indoor use. They are suitable for three phase AC operations for 12kV, 17.5kV and 24kV are used for the protection of the electrical equipment in various industries, mining, and especially for medium voltage di ...
Buck Converter Design
Buck Converter Design

... with QSW being the switching charge (see fig. 4.1), i.e. the charge that has to be added to transition the MOSFET from the threshold voltage at the gate to the end of the plateau (low V DS) in the gate charge characteristic. RGate represents the total resistance in the gate drive path (including MOS ...
Datasheet - Mouser Electronics
Datasheet - Mouser Electronics

... and there is 0.175V hysteresis. The disable comparator disables the operation when the voltage of the inverting input is lower than 0.35V and there is 100mV hysteresis. An external small-signal MOSFET can be used to disable the IC, as shown in Figure 23. The IC operating current decreases to reduce ...
Leakage Immune Modified Pass Transistor Based 8T SRAM Cell in
Leakage Immune Modified Pass Transistor Based 8T SRAM Cell in

The Importance of the X/R Ratio in Low
The Importance of the X/R Ratio in Low

... occurs, the electrical system requires some time to adapt. Such a response is called a transient, which means that it lasts for only a short time. In AC electrical systems, impedance has two components. The first is called reactance (X). Reactance depends on two things: (1) the inductance and (2) th ...
A Compact Switched-Capacitor Regulated Charge Pump
A Compact Switched-Capacitor Regulated Charge Pump

... Abstract—A CMOS switched-capacitor reference is combined with a switched-capacitor voltage doubling charge pump to produce a compact regulated 3.2-V power supply from an input that ranges from 1.8 to 3.5 V. It can supply up to 6 mA at minimum input. The switched-capacitor topology uses a single PN j ...
A Comparison of Si CMOS, SiGe BiCMOS, and InP HBT
A Comparison of Si CMOS, SiGe BiCMOS, and InP HBT

... technology node, Veff at peak fT scales with the technology node and is therefore more difficult to predict and use in analytical circuit design. However, the drain current per total device width at which the peak fT and fMAX of Si nMOSFETs occurs is 0.25 to 0.3 mA/mm, independent of technology node ...
4.  SIGNAL PROCESSING CIRCUITRY 4.1.  INTRODUCTION
4. SIGNAL PROCESSING CIRCUITRY 4.1. INTRODUCTION

... specifications. As integrated circuit design is a technology driven activity, it will be necessary to base all the designs specifically with reference to the proposed technology. The Hall voltage is an extremely small signal and contains both DC and AC noise. For this reason it will be necessary to ...
MAX5920 -48V Hot-Swap Controller with External R SENSE
MAX5920 -48V Hot-Swap Controller with External R SENSE

... converters. A built-in thermal-shutdown feature is also included to protect the external MOSFET in case of ...
TVS_web
TVS_web

... Electrostatic discharge (ESD) is the insidious killer that can zap a microchip with a spike of only 2 kV, well below the threshold of perception of the finger tip. Worst case values are 15 kV or more delivering 30 A. This threat is described in IEC 1000-4-2. The aspect of this threat which makes it ...
PAM2320 Description Pin Assignments
PAM2320 Description Pin Assignments

... internal power switch and synchronous rectifier to minimize external part count and realize high efficiency. During shutdown, the input is disconnected from the output and the shutdown current is less than 1µA. Other key features include over-temperature and short circuit protection, and under-volta ...
Datasheet
Datasheet

... Choosing the proper external resistors is a balance between accuracy and current consumption. There is a leakage current into IN1(IN2), and the current travels through the resistor divider, which introduces error. If extremely high resistor value are used, this current introduces significant error. ...
Standard Products Business Promotion - Renesas e
Standard Products Business Promotion - Renesas e

... An Apps Engineer from Renesas High Power team in Takasaki Japan will visit us in late July or August for a promotional caravan, if you have potential Triac or IGBT opportunities please contact Tak to get on the caravan schedule. ...
3000 Series Operation Manual
3000 Series Operation Manual

K046016266
K046016266

lab sheet - Faculty of Engineering
lab sheet - Faculty of Engineering

... 2. Operation of SCR Fig-2 shows schematically the basic operation of a SCR. The anode is connected through a series-limiting resistor RL to a positive voltage. The cathode is connected to ground via switch S2 and the gate is connected to switch S1, which is connected to ground. Under this configurat ...
Instruction Manual
Instruction Manual

< 1 ... 166 167 168 169 170 171 172 173 174 ... 468 >

Transistor



A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.
  • studyres.com © 2025
  • DMCA
  • Privacy
  • Terms
  • Report