ADL5315 数据手册DataSheet 下载
... the mirror voltages in this way provides inherently superior linearity over the widest current range independent of the supply voltage. Only leakage currents from the JFET op amp and ESD devices remain as significant sources of nonlinearity at very low currents. The voltage at VSET can also be used ...
... the mirror voltages in this way provides inherently superior linearity over the widest current range independent of the supply voltage. Only leakage currents from the JFET op amp and ESD devices remain as significant sources of nonlinearity at very low currents. The voltage at VSET can also be used ...
MAX8740 TFT-LCD Step-Up DC-DC Converter General Description Features
... is the ratio of the inductor peak-to-peak ripple current to the average DC inductor current at the full load current. The best trade-off between inductor size and circuit efficiency for step-up regulators generally has an LIR between 0.3 and 0.5. However, depending on the AC characteristics of the i ...
... is the ratio of the inductor peak-to-peak ripple current to the average DC inductor current at the full load current. The best trade-off between inductor size and circuit efficiency for step-up regulators generally has an LIR between 0.3 and 0.5. However, depending on the AC characteristics of the i ...
PAM2305D Description Pin Assignments
... Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use ...
... Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use ...
Presentations \Bremond
... with ITER environment would certainly required much effort, design work, mock-up validation, let alone manufacturing difficulties for making the real thing. 2. Vacuum window (primary safety barrier) is in an unmatched section - it has to withstand higher RF current / voltage (typically 35 kV / 1.6 k ...
... with ITER environment would certainly required much effort, design work, mock-up validation, let alone manufacturing difficulties for making the real thing. 2. Vacuum window (primary safety barrier) is in an unmatched section - it has to withstand higher RF current / voltage (typically 35 kV / 1.6 k ...
IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)
... minimum leakage current of a two-input NAND gate corresponds to he case when both its inputs are zero. In this case, both NMOS transistors in the NMOS network are off, while both PMOS transistors are on. The effective resistance between the supply and the ground is the resistance of two OFF NMOS tra ...
... minimum leakage current of a two-input NAND gate corresponds to he case when both its inputs are zero. In this case, both NMOS transistors in the NMOS network are off, while both PMOS transistors are on. The effective resistance between the supply and the ground is the resistance of two OFF NMOS tra ...
PAM3108 Description Pin Assignments
... 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in ...
... 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in ...
multithreshold cmos sleep stack and logic stack technique for digital
... pMOS and nMO Stransistor. MTCMOS technique uses multiple voltages in the circuit which is the main advantage of this. Power dissipation, propagation delay and power delay product are calculated. Constrains like power, delay is compared with the existing techniques. It is proved that proposed techniq ...
... pMOS and nMO Stransistor. MTCMOS technique uses multiple voltages in the circuit which is the main advantage of this. Power dissipation, propagation delay and power delay product are calculated. Constrains like power, delay is compared with the existing techniques. It is proved that proposed techniq ...
MAX1708 High-Frequency, High-Power, Low-Noise, Step-Up DC-DC Converter General Description
... fundamental and its harmonics, allowing easy postfiltering for noise reduction. External clock synchronization capability allows for even tighter noise spectrum control. Quiescent power consumption is less than 1mW to extend operating time in battery-powered systems. Two control inputs (ONA, ONB) al ...
... fundamental and its harmonics, allowing easy postfiltering for noise reduction. External clock synchronization capability allows for even tighter noise spectrum control. Quiescent power consumption is less than 1mW to extend operating time in battery-powered systems. Two control inputs (ONA, ONB) al ...
Course Notes
... Copyright © National Centre for Technology in Education 2009. Permission granted to reproduce for educational use providing the source is acknowledged. Copying for any other purposes prohibited without the prior written permission of the publisher. Please note Screenshots used in this manual may a ...
... Copyright © National Centre for Technology in Education 2009. Permission granted to reproduce for educational use providing the source is acknowledged. Copying for any other purposes prohibited without the prior written permission of the publisher. Please note Screenshots used in this manual may a ...
AN-610 - Fairchild
... of the signal duty cycle. Signals with lower duty cycles will dissipate less DC power. Since the load seen by the driving device is resistive, not capacitive, load capacitance does not affect power consumption. Therefore, parallel termination dissipates less AC power. Because of this lower AC power ...
... of the signal duty cycle. Signals with lower duty cycles will dissipate less DC power. Since the load seen by the driving device is resistive, not capacitive, load capacitance does not affect power consumption. Therefore, parallel termination dissipates less AC power. Because of this lower AC power ...
GBJ25005 - GBJ2510 Features Mechanical Data
... Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Inc ...
... Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Inc ...
PQ_Unit II
... A one-line diagram illustrating the power electronics that are used to achieve the compensation is shown in Fig. 2.4. When a disturbance to the input voltage is detected, a fast switch opens and the power is supplied through the series-connected electronics. This circuit adds or subtracts a voltage ...
... A one-line diagram illustrating the power electronics that are used to achieve the compensation is shown in Fig. 2.4. When a disturbance to the input voltage is detected, a fast switch opens and the power is supplied through the series-connected electronics. This circuit adds or subtracts a voltage ...
atienza-06.2_3-DATE2009
... the CNFET realized upto-to-date use metal gates and high-K dielectric [22, 2, 4], we tried to customize CNFET electrical model to Polysilicon gating and low-K dielectric, so that we can make a good study when compared to CMOS at 65nm. ...
... the CNFET realized upto-to-date use metal gates and high-K dielectric [22, 2, 4], we tried to customize CNFET electrical model to Polysilicon gating and low-K dielectric, so that we can make a good study when compared to CMOS at 65nm. ...
High-voltage vacuum Contactors
... No Surge Protection Required Special main contact materials minimize chopping current. No surge suppressor/arrester is required except for special applications. ...
... No Surge Protection Required Special main contact materials minimize chopping current. No surge suppressor/arrester is required except for special applications. ...
A 10nW 12-bit Accurate Analog Storage Cell with 10aA Leakage
... cascoded wide-output swing operational transconductance amplifer (OTA). In this figure the device under test (DUT) is an NMOS transistor, but the same structure was also used to characterize PMOS leakage. The current-integrator topology, when built using a high-gain amplifier, possesses several key ...
... cascoded wide-output swing operational transconductance amplifer (OTA). In this figure the device under test (DUT) is an NMOS transistor, but the same structure was also used to characterize PMOS leakage. The current-integrator topology, when built using a high-gain amplifier, possesses several key ...
700 Series 20V BIPOLAR ARRAY DESIGN MANUAL
... However, one of the major disadvantages of full-custom ICs remains for the standard cell design. While the cells may be standardized, their placement and routing is not. Therefore, a full set of custom masks is still required and is reflected in high cost for anything but large manufacturing quantit ...
... However, one of the major disadvantages of full-custom ICs remains for the standard cell design. While the cells may be standardized, their placement and routing is not. Therefore, a full set of custom masks is still required and is reflected in high cost for anything but large manufacturing quantit ...
Arrangement for Connecting Plural Self
... A power converter device according to claim 1, further comprising: a gate blocking means for stopping the operation of said converters; and a gate deblocking means for restarting the operation of said converters. 5. A power converter device according to claim 2, further comprising: a gate blocking m ...
... A power converter device according to claim 1, further comprising: a gate blocking means for stopping the operation of said converters; and a gate deblocking means for restarting the operation of said converters. 5. A power converter device according to claim 2, further comprising: a gate blocking m ...
APX4558 DUAL CHANNEL LOW NOISE GENERAL PURPOSE OPERATIONAL AMPLIFIER
... 2. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to ab ...
... 2. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to ab ...
Physical IC debug – backside approach and nanoscale challenge
... through chip backside. Several applications demonstrate the power and potential of this new approach. ...
... through chip backside. Several applications demonstrate the power and potential of this new approach. ...
RF GaAs Solutions - NXP Semiconductors
... (E-pHEMT), HFET and InGaP HBT device technologies. The E-pHEMT and HFET devices offer higher OIP3 relative to HBT devices biased at the same current. This enables system designers to achieve excellent linearity with lower power consumption. The E-pHEMT devices offer superior noise figure in conjunct ...
... (E-pHEMT), HFET and InGaP HBT device technologies. The E-pHEMT and HFET devices offer higher OIP3 relative to HBT devices biased at the same current. This enables system designers to achieve excellent linearity with lower power consumption. The E-pHEMT devices offer superior noise figure in conjunct ...
A Silicon Axon - NIPS Proceedings
... Figure 1: Three sections of the axon circuit. Three stages of the axon circuit are depicted in Figure 1. A single stage consists of two capacitors and what would be considered a pseudo-nMOS NAND gate and a pseudo-nMOS inverter in digital logic design. These simple circuits are characterized by a thr ...
... Figure 1: Three sections of the axon circuit. Three stages of the axon circuit are depicted in Figure 1. A single stage consists of two capacitors and what would be considered a pseudo-nMOS NAND gate and a pseudo-nMOS inverter in digital logic design. These simple circuits are characterized by a thr ...
Transistor
.jpg?width=300){kind=spacer}
A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.