LTC3406-1.2 - 1.5MHz, 600mA Synchronous
... Different core materials and shapes will change the size/ current and price/current relationship of an inductor. Toroid or shielded pot cores in ferrite or permalloy materials are small and don’t radiate much energy, but generally cost more than powdered iron core inductors with similar electrical c ...
... Different core materials and shapes will change the size/ current and price/current relationship of an inductor. Toroid or shielded pot cores in ferrite or permalloy materials are small and don’t radiate much energy, but generally cost more than powdered iron core inductors with similar electrical c ...
AAT4684 数据资料DataSheet下载
... large transients and a high voltage spike can occur which can damage other electronic devices in the product such as the battery charger. A hot plug of the AC/DC wall adapter into the AC outlet can create and release a voltage spike from the transformer. As a result, some sensitive devices within th ...
... large transients and a high voltage spike can occur which can damage other electronic devices in the product such as the battery charger. A hot plug of the AC/DC wall adapter into the AC outlet can create and release a voltage spike from the transformer. As a result, some sensitive devices within th ...
FJP5554 NPN Silicon Transistor FJP5554 — NPN Silicon T
... life, and (c) whose failure to perform when properly used in safety or effectiveness. accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counter ...
... life, and (c) whose failure to perform when properly used in safety or effectiveness. accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counter ...
Paper
... [email protected], [email protected] , [3][email protected] Abstract- Comparator is one of the basic building blocks of analog to digital converter. The need for ultra-low-power, area efficient and high speed analog-to-digital converters is pushing toward the use of dynamic regenerat ...
... [email protected], [email protected] , [3][email protected] Abstract- Comparator is one of the basic building blocks of analog to digital converter. The need for ultra-low-power, area efficient and high speed analog-to-digital converters is pushing toward the use of dynamic regenerat ...
No Slide Title
... with some hidden layers to protect IHP intellectual property. Radiation hard annular NMOS transistor drawing is well supported. This is done by allowing 135 degree bends of Poly lines on Active in the DRC. There are included Virtuoso utilities that are needed for successful DRC. Cadence Spectre does ...
... with some hidden layers to protect IHP intellectual property. Radiation hard annular NMOS transistor drawing is well supported. This is done by allowing 135 degree bends of Poly lines on Active in the DRC. There are included Virtuoso utilities that are needed for successful DRC. Cadence Spectre does ...
PD166013T1J Data Sheet INTELLIGENT POWER DEVICE
... source of SW1 (= gate of output MOS) falls below the GND voltage. SW1 is turned on, and the clamp diode is connected to the gate of the output MOS, activating the dynamic clamp circuit. When the over-voltage is applied to VCC, the gate voltage and source voltage of SW1 are both nearly equal to GND. ...
... source of SW1 (= gate of output MOS) falls below the GND voltage. SW1 is turned on, and the clamp diode is connected to the gate of the output MOS, activating the dynamic clamp circuit. When the over-voltage is applied to VCC, the gate voltage and source voltage of SW1 are both nearly equal to GND. ...
Controlling the dimensionality of charge transport in organic thin-film transistors
... the on and off state, respectively (see Table 1). P3CPT-based OTFTs showed fast switching characteristics at low gate voltage (VG = VD = −0.5 V, Fig. 4A), similar to the P3HTbased OTFTs (see supporting information Fig. S3), which suggests that they operate in the field-effect regime (Regime I in Fig ...
... the on and off state, respectively (see Table 1). P3CPT-based OTFTs showed fast switching characteristics at low gate voltage (VG = VD = −0.5 V, Fig. 4A), similar to the P3HTbased OTFTs (see supporting information Fig. S3), which suggests that they operate in the field-effect regime (Regime I in Fig ...
FJB5555 NPN Silicon Transistor — NPN Silicon T ransistor
... life, and (c) whose failure to perform when properly used in safety or effectiveness. accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counter ...
... life, and (c) whose failure to perform when properly used in safety or effectiveness. accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counter ...
Surface Mount Tantalum Capacitors
... of those footprints have a nominal height of 0.050 inches which make them ideal for low profile applications. The TAZ series is qualified as the MIL-Style CWR09, the molded equivalent of the MIL-Style CWR06. Two new case sizes are added to this series, increasing the capacitance/voltage ratings avai ...
... of those footprints have a nominal height of 0.050 inches which make them ideal for low profile applications. The TAZ series is qualified as the MIL-Style CWR09, the molded equivalent of the MIL-Style CWR06. Two new case sizes are added to this series, increasing the capacitance/voltage ratings avai ...
V GS(on)
... • This transistor is normally off when the gate voltage is zero. • A positive gate voltage attracts electrons into the p-region to create an n-type inversion layer and turns the device on. ...
... • This transistor is normally off when the gate voltage is zero. • A positive gate voltage attracts electrons into the p-region to create an n-type inversion layer and turns the device on. ...
Tantalum & Niobium Capacitors Technical Standards and Benefits
... V = application voltage R = total resistance of the circuit The actual current through the capacitor is defined by the lower value calculated from equations [a] and [b]. Solid Tantalum capacitors have a limited ability to withstand voltage and current surges. Such current surges can cause a capacito ...
... V = application voltage R = total resistance of the circuit The actual current through the capacitor is defined by the lower value calculated from equations [a] and [b]. Solid Tantalum capacitors have a limited ability to withstand voltage and current surges. Such current surges can cause a capacito ...
Thermal runaway
Thermal runaway refers to a situation where an increase in temperature changes the conditions in a way that causes a further increase in temperature, often leading to a destructive result. It is a kind of uncontrolled positive feedback.In other words, ""thermal runaway"" describes a process which is accelerated by increased temperature, in turn releasing energy that further increases temperature. In chemistry (and chemical engineering), this risk is associated with strongly exothermic reactions that are accelerated by temperature rise. In electrical engineering, thermal runaway is typically associated with increased current flow and power dissipation, although exothermic chemical reactions can be of concern here too. Thermal runaway can occur in civil engineering, notably when the heat released by large amounts of curing concrete is not controlled. In astrophysics, runaway nuclear fusion reactions in stars can lead to nova and several types of supernova explosions, and also occur as a less dramatic event in the normal evolution of solar mass stars, the ""helium flash"".There are also concerns regarding global warming that a global average increase of 3-4 degrees Celsius above the preindustrial baseline could lead to a further unchecked increase in surface temperatures. For example, releases of methane, a greenhouse gas more potent than CO2, from wetlands, melting permafrost and continental margin seabed clathrate deposits could be subject to positive feedback.