PCTF® Approach Saves MW/RF Component/Module Costs
... Norwood, MA USA: Packaging is a critical part of RF/microwave component and module design. The package provides protection but, at higher frequencies, is also part of the circuitry. For that reason, the package must provide excellent electrical performance, environmental protection, shielding, and a ...
... Norwood, MA USA: Packaging is a critical part of RF/microwave component and module design. The package provides protection but, at higher frequencies, is also part of the circuitry. For that reason, the package must provide excellent electrical performance, environmental protection, shielding, and a ...
Section F5: Darlington Circuit
... of an almost doubled VBE (overall VBE for the pair is 1.2V to 1.4V instead of the 0.6V to 0.7V for single silicon BJTs) and the fact that any leakage current from the first transistor is amplified by the second transistor. A Darlington pair may also be created using two pnp devices, particularly in ...
... of an almost doubled VBE (overall VBE for the pair is 1.2V to 1.4V instead of the 0.6V to 0.7V for single silicon BJTs) and the fact that any leakage current from the first transistor is amplified by the second transistor. A Darlington pair may also be created using two pnp devices, particularly in ...
superconducting_magnets_ASP_backup_slides - Indico
... A quench is a part of the normal life of a superconducting magnet. Appropriate detection and protection strategies should be built in the design from the start ...
... A quench is a part of the normal life of a superconducting magnet. Appropriate detection and protection strategies should be built in the design from the start ...
Transducers(cont`d)
... R = The resistance of the conductor at temperature t (°C) Ro = The resistance at the reference temperature, usually 20°C = The temperature coefficient of resistance T = The difference between the operating and the reference Temperature ...
... R = The resistance of the conductor at temperature t (°C) Ro = The resistance at the reference temperature, usually 20°C = The temperature coefficient of resistance T = The difference between the operating and the reference Temperature ...
Full Function LED Driver IC For Automotive Interior Lighting
... MILPITAS, Calif., May 31, 2016 -- Integrated Silicon Solution, Inc., a leader in advanced memory and analog IC solutions, today announced a single chip solution for automotive interior lighting. The IS32LT3175 is a feature-rich AEC-Q100 (Automotive Electronics Council) certified linear LED driver en ...
... MILPITAS, Calif., May 31, 2016 -- Integrated Silicon Solution, Inc., a leader in advanced memory and analog IC solutions, today announced a single chip solution for automotive interior lighting. The IS32LT3175 is a feature-rich AEC-Q100 (Automotive Electronics Council) certified linear LED driver en ...
a Low Cost, Precision IC Temperature Transducer AD592*
... The thermal environment in which the AD592 is used determines two performance traits: the effect of self-heating on accuracy and the response time of the sensor to rapid changes in temperature. In the first case, a rise in the IC junction temperature above the ambient temperature is a function of tw ...
... The thermal environment in which the AD592 is used determines two performance traits: the effect of self-heating on accuracy and the response time of the sensor to rapid changes in temperature. In the first case, a rise in the IC junction temperature above the ambient temperature is a function of tw ...
KD2003-CF30A
... of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fir ...
... of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fir ...
NZT605 NPN Darlington Transistor NZT 605 NP
... NZT605 NPN Darlington Transistor • This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. • Sourced from process 06. ...
... NZT605 NPN Darlington Transistor • This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. • Sourced from process 06. ...
LV8402GP
... damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical ...
... damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical ...
Flex Series (Z Foil) - Vishay Precision Group
... The product specifications do not expand or otherwise modify VPG’s terms and conditions of purchase, including but not limited to, the warranty expressed therein. VPG makes no warranty, representation or guarantee other than as set forth in the terms and conditions of purchase. To the maximum extent ...
... The product specifications do not expand or otherwise modify VPG’s terms and conditions of purchase, including but not limited to, the warranty expressed therein. VPG makes no warranty, representation or guarantee other than as set forth in the terms and conditions of purchase. To the maximum extent ...
IGBT or MOSFET: Choose Wisely
... temperature, when switching at the lower frequency. This illustrates the subject of this paper, namely there is no iron clad rule which can be used to determine which device will offer the best performance in a specific type of circuit. Depending upon the exact power level, devices being considered, ...
... temperature, when switching at the lower frequency. This illustrates the subject of this paper, namely there is no iron clad rule which can be used to determine which device will offer the best performance in a specific type of circuit. Depending upon the exact power level, devices being considered, ...
Solid State University - Linn-Benton Community College
... Silicon, when is a crystal form, shares valence electrons to make a good insulator Silicon can be “doped” to add electrons to the valence ring or remove electrons from the valence ring ...
... Silicon, when is a crystal form, shares valence electrons to make a good insulator Silicon can be “doped” to add electrons to the valence ring or remove electrons from the valence ring ...
Avoid Pitfalls in Precision Temperature Measurement
... Exact readings of small voltages are best done today by new 24-bit SigmaDelta A/D converters. These A/D converters can resolve signals of less than 0.300V or less than 1ppm. When measuring temperature, this resolution is important because a thermocouple generates voltages in the order of 40mV full- ...
... Exact readings of small voltages are best done today by new 24-bit SigmaDelta A/D converters. These A/D converters can resolve signals of less than 0.300V or less than 1ppm. When measuring temperature, this resolution is important because a thermocouple generates voltages in the order of 40mV full- ...
80V, 50mA OPERATIONAL AMPLIFIERS FEATURES DESCRIPTION
... The OPA452 and OPA453 are designed with internal current-limiting circuitry that limits the output current to approximately 125mA. The current limit varies slightly with increasing junction temperature and supply voltage, as shown in the Typical Characteristics. Current limit, in combination with th ...
... The OPA452 and OPA453 are designed with internal current-limiting circuitry that limits the output current to approximately 125mA. The current limit varies slightly with increasing junction temperature and supply voltage, as shown in the Typical Characteristics. Current limit, in combination with th ...
Thermal runaway
Thermal runaway refers to a situation where an increase in temperature changes the conditions in a way that causes a further increase in temperature, often leading to a destructive result. It is a kind of uncontrolled positive feedback.In other words, ""thermal runaway"" describes a process which is accelerated by increased temperature, in turn releasing energy that further increases temperature. In chemistry (and chemical engineering), this risk is associated with strongly exothermic reactions that are accelerated by temperature rise. In electrical engineering, thermal runaway is typically associated with increased current flow and power dissipation, although exothermic chemical reactions can be of concern here too. Thermal runaway can occur in civil engineering, notably when the heat released by large amounts of curing concrete is not controlled. In astrophysics, runaway nuclear fusion reactions in stars can lead to nova and several types of supernova explosions, and also occur as a less dramatic event in the normal evolution of solar mass stars, the ""helium flash"".There are also concerns regarding global warming that a global average increase of 3-4 degrees Celsius above the preindustrial baseline could lead to a further unchecked increase in surface temperatures. For example, releases of methane, a greenhouse gas more potent than CO2, from wetlands, melting permafrost and continental margin seabed clathrate deposits could be subject to positive feedback.