0261 - Optocoupler, Phototransistor Output With Base Connector
... amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to ...
... amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to ...
UWE Series - power, Murata
... 6 Short circuit shutdown begins when the output voltage degrades approximately 2% from the selected setting. 7 The outputs are not intended to sink appreciable reverse current. 8 Output noise may be further reduced by adding an external filter. See I/O Filtering and Noise Reduction. Larger caps (espe ...
... 6 Short circuit shutdown begins when the output voltage degrades approximately 2% from the selected setting. 7 The outputs are not intended to sink appreciable reverse current. 8 Output noise may be further reduced by adding an external filter. See I/O Filtering and Noise Reduction. Larger caps (espe ...
LTC3875 - Dual, 2-Phase, Synchronous Controller with Low Value
... step-down DC/DC controller that drives all N-channel synchronous power MOSFET stages. It employs a unique architecture which enhances the signal-to-noise ratio of the current sense signal, allowing the use of very low DC resistance power inductors to maximize the efficiency in high current applicati ...
... step-down DC/DC controller that drives all N-channel synchronous power MOSFET stages. It employs a unique architecture which enhances the signal-to-noise ratio of the current sense signal, allowing the use of very low DC resistance power inductors to maximize the efficiency in high current applicati ...
www.geca.ac.in
... formed from semiconductor materials, not metals ▪ often composite of a ceramic and a metallic oxide (Mn, Co, Cu or Fe) typically have negative temperature coefficients ...
... formed from semiconductor materials, not metals ▪ often composite of a ceramic and a metallic oxide (Mn, Co, Cu or Fe) typically have negative temperature coefficients ...
GP08A, GP08B, GP08D, GP08G, GP08J Glass Passivated
... typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in ...
... typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in ...
by Submitted in partial fulfilment of the requirements for the degree
... frequency drift in oscillators. Thermal instability of a voltage-controlled oscillator (VCO) is a critical design factor for radio frequency ICs, such as transceiver circuits in communication networks, data link protocols, medical wireless sensor networks and microelectromechanical resonators. For e ...
... frequency drift in oscillators. Thermal instability of a voltage-controlled oscillator (VCO) is a critical design factor for radio frequency ICs, such as transceiver circuits in communication networks, data link protocols, medical wireless sensor networks and microelectromechanical resonators. For e ...
MELF Resistors - Token Components
... trimmed resistors can not be accepted, but where also pulse energies apply. Typical applications are in the fields of telecommunication equipment and industrial electronics. These high stability, non-inductance MELF resistors have a footprint very close to comparable chip resistors but maintain thei ...
... trimmed resistors can not be accepted, but where also pulse energies apply. Typical applications are in the fields of telecommunication equipment and industrial electronics. These high stability, non-inductance MELF resistors have a footprint very close to comparable chip resistors but maintain thei ...
TPS70302 数据资料 dataSheet 下载
... The TPS703xx family of voltage regulators offers very low dropout voltage and dual outputs with power up sequence control, designed primarily for DSP applications. These devices have low noise output performance without using any added filter bypass capacitors, and are designed to have a fast transi ...
... The TPS703xx family of voltage regulators offers very low dropout voltage and dual outputs with power up sequence control, designed primarily for DSP applications. These devices have low noise output performance without using any added filter bypass capacitors, and are designed to have a fast transi ...
ZXMC10A816N8 Product Summary Features
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
Experiment 6 Transistors as amplifiers and switches
... strong function of temperature, rising by about 10% for a 10°C rise in temperature; it also can vary by as much as 30% between transistors with the same model number. This possible variance in β should be considered when designing transistor amplifiers. ...
... strong function of temperature, rising by about 10% for a 10°C rise in temperature; it also can vary by as much as 30% between transistors with the same model number. This possible variance in β should be considered when designing transistor amplifiers. ...
Passivation effects of atomic-layer-deposited
... (ii) Reducing the surface concentration of minority carriers (i.e. Field-effect passivation) The surface recombination rate (Us ) can be reduced by decreasing one of two carrier concentrations at the silicon surface typically, the minority carrier concentration. This can be achieved by the fixed charg ...
... (ii) Reducing the surface concentration of minority carriers (i.e. Field-effect passivation) The surface recombination rate (Us ) can be reduced by decreasing one of two carrier concentrations at the silicon surface typically, the minority carrier concentration. This can be achieved by the fixed charg ...
DMN53D0LW Product Summary Features
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
FDMF6823A — Extra-Small, High-Performance, High-Frequency DrMOS Module FDMF6823A — Extra-Small, Hig Benefits
... 2. Operating at high VIN can create excessive AC overshoots on the VSWH-to-GND and BOOT-to-GND nodes during MOSFET switching transients. For reliable DrMOS operation, VSWH-to-GND and BOOT-to-GND must remain at or below the Absolute Maximum Ratings shown in the table above. Refer to the “Application ...
... 2. Operating at high VIN can create excessive AC overshoots on the VSWH-to-GND and BOOT-to-GND nodes during MOSFET switching transients. For reliable DrMOS operation, VSWH-to-GND and BOOT-to-GND must remain at or below the Absolute Maximum Ratings shown in the table above. Refer to the “Application ...
FDMF3030 — Extra-Small, High-Performance, High-Frequency, DrMOS Module FDMF3030 — Extra-S m
... No connect. The pin is not electrically connected internally, but can be connected to VIN for convenience. ...
... No connect. The pin is not electrically connected internally, but can be connected to VIN for convenience. ...
Document
... configuration) and the LC tank circuit (here the single winding is tapped), plus a single battery; it will work, but probably with high distortion and high current drain (that could be improved by adding resistance between the source and the coil tap), and serves as an uncomplicated illustration of ...
... configuration) and the LC tank circuit (here the single winding is tapped), plus a single battery; it will work, but probably with high distortion and high current drain (that could be improved by adding resistance between the source and the coil tap), and serves as an uncomplicated illustration of ...
ZLLS2000 Features Mechanical Data
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
CSE 477. VLSI Systems Design - University of California
... NMOS PTs to eliminate most of the threshold drop (body effect still in force preventing full swing to VDD) ...
... NMOS PTs to eliminate most of the threshold drop (body effect still in force preventing full swing to VDD) ...
Recommendations for Printed Circuit Board Assembly Using Infineon PG-SON Packages Wireless Solutions
... precautionary measures regarding handling and processing. Discharging of electrostatically-charged objects over an IC, caused by human touch or by processing tools, may cause high current and respectively high voltage pulses, which may damage or even destroy sensitive semiconductor structures. ICs m ...
... precautionary measures regarding handling and processing. Discharging of electrostatically-charged objects over an IC, caused by human touch or by processing tools, may cause high current and respectively high voltage pulses, which may damage or even destroy sensitive semiconductor structures. ICs m ...
Thermal runaway
Thermal runaway refers to a situation where an increase in temperature changes the conditions in a way that causes a further increase in temperature, often leading to a destructive result. It is a kind of uncontrolled positive feedback.In other words, ""thermal runaway"" describes a process which is accelerated by increased temperature, in turn releasing energy that further increases temperature. In chemistry (and chemical engineering), this risk is associated with strongly exothermic reactions that are accelerated by temperature rise. In electrical engineering, thermal runaway is typically associated with increased current flow and power dissipation, although exothermic chemical reactions can be of concern here too. Thermal runaway can occur in civil engineering, notably when the heat released by large amounts of curing concrete is not controlled. In astrophysics, runaway nuclear fusion reactions in stars can lead to nova and several types of supernova explosions, and also occur as a less dramatic event in the normal evolution of solar mass stars, the ""helium flash"".There are also concerns regarding global warming that a global average increase of 3-4 degrees Celsius above the preindustrial baseline could lead to a further unchecked increase in surface temperatures. For example, releases of methane, a greenhouse gas more potent than CO2, from wetlands, melting permafrost and continental margin seabed clathrate deposits could be subject to positive feedback.