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Sixth-Generation V-Series IGBT Module Application
Sixth-Generation V-Series IGBT Module Application

... Figure 2-1 shows the cross-section views of the respective IGBT chips for 1200V series in Fuji Electric. Table 2-1 shows a list of technologies applied to the IGBTs of respective generations. For the third-generation IGBT and before, the planar-gate punch-through IGBT was mainly used. The punch-thro ...
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... typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in ...
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... Rapid and random movement of electrons within a conductor due to thermal agitation.  Is present in all electronic components and communications systems.  Is a form of additive noise, meaning that it cannot be eliminated and it increases in intensity with the number of devices in a circuit and with ...
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... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
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... IC Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have been undergoing a rapid development in recent years, thanks to its high breakdown voltage, fast switching speed, and good thermal conductivity [1]-[6]. Compared with Silicon (Si) Insulated Gate Bipolar Transistors (IGBTs), SiC MOSF ...
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... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
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... 1. Operating temperature is the case surface temperature on the center/top side of the DRAM. 2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the DRAM case temperature must be maintained between 0 to 85℃ under all operating ...
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... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
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Thermal runaway



Thermal runaway refers to a situation where an increase in temperature changes the conditions in a way that causes a further increase in temperature, often leading to a destructive result. It is a kind of uncontrolled positive feedback.In other words, ""thermal runaway"" describes a process which is accelerated by increased temperature, in turn releasing energy that further increases temperature. In chemistry (and chemical engineering), this risk is associated with strongly exothermic reactions that are accelerated by temperature rise. In electrical engineering, thermal runaway is typically associated with increased current flow and power dissipation, although exothermic chemical reactions can be of concern here too. Thermal runaway can occur in civil engineering, notably when the heat released by large amounts of curing concrete is not controlled. In astrophysics, runaway nuclear fusion reactions in stars can lead to nova and several types of supernova explosions, and also occur as a less dramatic event in the normal evolution of solar mass stars, the ""helium flash"".There are also concerns regarding global warming that a global average increase of 3-4 degrees Celsius above the preindustrial baseline could lead to a further unchecked increase in surface temperatures. For example, releases of methane, a greenhouse gas more potent than CO2, from wetlands, melting permafrost and continental margin seabed clathrate deposits could be subject to positive feedback.
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