MC33290
... provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semico ...
... provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semico ...
CMA 0204 High Pulse Load Carbon Film MINI
... The power dissipation on the resistor generates a temperature rise against the local ambient, depending on the heat flow support of the printed-circuit board (thermal resistance). The rated dissipation applies only if the permitted film temperature is not exceeded. Furthermore, a high level of ambie ...
... The power dissipation on the resistor generates a temperature rise against the local ambient, depending on the heat flow support of the printed-circuit board (thermal resistance). The rated dissipation applies only if the permitted film temperature is not exceeded. Furthermore, a high level of ambie ...
Reliability_Statistics
... The modified ROSE test method involves a thermal extraction. The PCB is exposed in a solvent solution at a predetermined temperature for a specified time period. This process draws the ions present on the PCB into the solvent solution. The solution is tested using an ionographstyle test unit. The re ...
... The modified ROSE test method involves a thermal extraction. The PCB is exposed in a solvent solution at a predetermined temperature for a specified time period. This process draws the ions present on the PCB into the solvent solution. The solution is tested using an ionographstyle test unit. The re ...
Fast, Parallel Two-Rail Code Checker with Enhanced Testability*
... tree TRC checkers with periodic outputs have been proposed in [9-12]. The main drawback of these checkers is that, in high n-variable implementations, they present a considerable degradation of their speed performance and increased requirements in silicon area while in many cases stuck-open faults a ...
... tree TRC checkers with periodic outputs have been proposed in [9-12]. The main drawback of these checkers is that, in high n-variable implementations, they present a considerable degradation of their speed performance and increased requirements in silicon area while in many cases stuck-open faults a ...
No-fault-found and intermittent failures in electronic products
... software. There may be other categories and sub-categories based on the specific product and its life cycle profile. 2.1. People category Lack of skills or proper behavior of engineers, maintenance personnel and technicians can contribute to NFF. For example, ‘‘sneak circuits” are well-known electri ...
... software. There may be other categories and sub-categories based on the specific product and its life cycle profile. 2.1. People category Lack of skills or proper behavior of engineers, maintenance personnel and technicians can contribute to NFF. For example, ‘‘sneak circuits” are well-known electri ...
Application Note - Galco Industrial Electronics
... collector current to continue flowing. Thus, the later part of the IGBT turn-off fall current, is mainly due to the hole current. Some of the holes in the “n” base region continues to cross through the C-B junction of the parasitic npn transistor and travel horizontally below the “n” emitter layer a ...
... collector current to continue flowing. Thus, the later part of the IGBT turn-off fall current, is mainly due to the hole current. Some of the holes in the “n” base region continues to cross through the C-B junction of the parasitic npn transistor and travel horizontally below the “n” emitter layer a ...
Nanoporous Self-organized Anodic Alumina Templates
... focusing effect of the electric field in surface depressions. If pores start to nucleate and to grow j(t) increases, achieving a maximum value. Subsequently, j(t) slightly decreases [fig. 2 a1) from tC to tD] due to growth competition among the pores. Finally, j(t) arrives at a constant value indica ...
... focusing effect of the electric field in surface depressions. If pores start to nucleate and to grow j(t) increases, achieving a maximum value. Subsequently, j(t) slightly decreases [fig. 2 a1) from tC to tD] due to growth competition among the pores. Finally, j(t) arrives at a constant value indica ...
VS-20ETS08S-M3, VS-20ETS12S-M3 Series High Voltage Surface
... typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in ...
... typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in ...
characterization, modeling, and design of esd
... (ESD) has warranted the use of dedicated on-chip ESD protection circuits. Although the problem of ESD in integrated circuits (ICs) has received much attention industry-wide since the late 1970s, design of robust ESD circuits remains challenging because ESD failure mechanisms become more acute as cri ...
... (ESD) has warranted the use of dedicated on-chip ESD protection circuits. Although the problem of ESD in integrated circuits (ICs) has received much attention industry-wide since the late 1970s, design of robust ESD circuits remains challenging because ESD failure mechanisms become more acute as cri ...
AN10273 Power MOSFET single-shot and repetitive
... Electronic applications have progressed significantly in recent years and have inevitably increased the demand for an intrinsically rugged power MOSFET. Device ruggedness defines the capacity of a device to sustain an avalanche current during an unclamped inductive load switching event. The avalanch ...
... Electronic applications have progressed significantly in recent years and have inevitably increased the demand for an intrinsically rugged power MOSFET. Device ruggedness defines the capacity of a device to sustain an avalanche current during an unclamped inductive load switching event. The avalanch ...
Multi-Channel LCD Gamma Correction Buffer
... inputs and outputs of the BUFxx703 incorporate internal ESD protection circuits that prevent functional failures at voltages up to 4kV HBM and 1.5kV CDM. The various buffers within the BUFxx703 are carefully matched to the voltage I/O requirements for the gamma correction application. Each buffer is ...
... inputs and outputs of the BUFxx703 incorporate internal ESD protection circuits that prevent functional failures at voltages up to 4kV HBM and 1.5kV CDM. The various buffers within the BUFxx703 are carefully matched to the voltage I/O requirements for the gamma correction application. Each buffer is ...
Sixth-Generation V-Series IGBT Module Application
... Figure 2-1 shows the cross-section views of the respective IGBT chips for 1200V series in Fuji Electric. Table 2-1 shows a list of technologies applied to the IGBTs of respective generations. For the third-generation IGBT and before, the planar-gate punch-through IGBT was mainly used. The punch-thro ...
... Figure 2-1 shows the cross-section views of the respective IGBT chips for 1200V series in Fuji Electric. Table 2-1 shows a list of technologies applied to the IGBTs of respective generations. For the third-generation IGBT and before, the planar-gate punch-through IGBT was mainly used. The punch-thro ...
Thermal runaway
Thermal runaway refers to a situation where an increase in temperature changes the conditions in a way that causes a further increase in temperature, often leading to a destructive result. It is a kind of uncontrolled positive feedback.In other words, ""thermal runaway"" describes a process which is accelerated by increased temperature, in turn releasing energy that further increases temperature. In chemistry (and chemical engineering), this risk is associated with strongly exothermic reactions that are accelerated by temperature rise. In electrical engineering, thermal runaway is typically associated with increased current flow and power dissipation, although exothermic chemical reactions can be of concern here too. Thermal runaway can occur in civil engineering, notably when the heat released by large amounts of curing concrete is not controlled. In astrophysics, runaway nuclear fusion reactions in stars can lead to nova and several types of supernova explosions, and also occur as a less dramatic event in the normal evolution of solar mass stars, the ""helium flash"".There are also concerns regarding global warming that a global average increase of 3-4 degrees Celsius above the preindustrial baseline could lead to a further unchecked increase in surface temperatures. For example, releases of methane, a greenhouse gas more potent than CO2, from wetlands, melting permafrost and continental margin seabed clathrate deposits could be subject to positive feedback.