Vertical scaling of 0.25-/spl mu/ emitter InP/InGaAs single
... This paper reports InGaAs/InP SHBTs with current cut-off frequencies of 452 GHz: The highest reported for any bipolar transistor to date. The exceptional RF performance was achieved through vertical scaling of the epitaxial layer structure, thereby allowing a reduction of device transit time. As a r ...
... This paper reports InGaAs/InP SHBTs with current cut-off frequencies of 452 GHz: The highest reported for any bipolar transistor to date. The exceptional RF performance was achieved through vertical scaling of the epitaxial layer structure, thereby allowing a reduction of device transit time. As a r ...
AN137 - Accurate Temperature Sensing with an External P
... If the magnitude of noise is very large with respect to ΔVBE, and the noise is asymmetrical (as in the scope shot) and different between current measurements, ΔVBE cannot cancel out the noise. In this case a single measurement can produce a more accurate temperature measurement. For example, suppose ...
... If the magnitude of noise is very large with respect to ΔVBE, and the noise is asymmetrical (as in the scope shot) and different between current measurements, ΔVBE cannot cancel out the noise. In this case a single measurement can produce a more accurate temperature measurement. For example, suppose ...
LM134/LM234/LM334 3-Terminal Adjustable Current
... limit is 1V/µs. Slew rates above the limit do not harm the LM134, or cause large currents to flow. THERMAL EFFECTS Internal heating can have a significant effect on current regulation for ISET greater than 100µA. For example, each 1V increase across the LM134 at ISET = 1 mA will increase junction te ...
... limit is 1V/µs. Slew rates above the limit do not harm the LM134, or cause large currents to flow. THERMAL EFFECTS Internal heating can have a significant effect on current regulation for ISET greater than 100µA. For example, each 1V increase across the LM134 at ISET = 1 mA will increase junction te ...
RT9709 - Richtek
... input inrush current and input over shoot voltage. Generally, it is necessary to increase the input capacitance CIN for reducing the input over shoot voltage. However, this will increase the inrush current of input. There are two scenarios that can cause the input over shoot voltage. The first one i ...
... input inrush current and input over shoot voltage. Generally, it is necessary to increase the input capacitance CIN for reducing the input over shoot voltage. However, this will increase the inrush current of input. There are two scenarios that can cause the input over shoot voltage. The first one i ...
The Petite Fridge - Health Care Logistics
... thermoelectric cooler (TEC) to create a heat flux between the junction of two different types of materials. A Peltier cooler or thermoelectric heat pump is a solid-state, active heat pump that transfers heat from one side of the device to the other side against the temperature gradient with consumpt ...
... thermoelectric cooler (TEC) to create a heat flux between the junction of two different types of materials. A Peltier cooler or thermoelectric heat pump is a solid-state, active heat pump that transfers heat from one side of the device to the other side against the temperature gradient with consumpt ...
Analog Optical Isolators VACTROLS®
... termed “pink noise”. Unfortunately, the constant (K) can only be determined empirically and may vary greatly even for similar devices. Flicker noise may dominate when the bandwidth of interest contains frequencies less than about 1 kHz. ...
... termed “pink noise”. Unfortunately, the constant (K) can only be determined empirically and may vary greatly even for similar devices. Flicker noise may dominate when the bandwidth of interest contains frequencies less than about 1 kHz. ...
SIGC03T60E
... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Inf ...
... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Inf ...
R 1
... • If a continuous wire is connected to the terminal of a battery, the potential difference between the terminals of the battery sets up an electric field inside the wire and parallel to it, directed from the positive toward the negative terminal. • Thus free electrons are attracted into the positive ...
... • If a continuous wire is connected to the terminal of a battery, the potential difference between the terminals of the battery sets up an electric field inside the wire and parallel to it, directed from the positive toward the negative terminal. • Thus free electrons are attracted into the positive ...
Si2318DS
... Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vi ...
... Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vi ...
1.2A Single-chip Li-ion and Li
... before the DC charge current has dropped to 1/10th the ISET rammed value. The 1ms filter time (tTERM) on the termination comparator ensures that transient loads of this nature do not result in premature charge cycle termination. Once the average charge current drops below 1/10th the ISET rammed valu ...
... before the DC charge current has dropped to 1/10th the ISET rammed value. The 1ms filter time (tTERM) on the termination comparator ensures that transient loads of this nature do not result in premature charge cycle termination. Once the average charge current drops below 1/10th the ISET rammed valu ...
SiC “Super” Junction Transistors Offer Breakthrough High Temp
... Schottky diodes were readily available since 2001[3], the commercialization of SiC power transistors has lagged behind. [4-5]. GeneSiC is developing an innovative SiC power switch, a “Super” Junction Transistor (SJT) in 1.2 kV to 10 kV voltage ratings for high efficiency power conversion in Switched ...
... Schottky diodes were readily available since 2001[3], the commercialization of SiC power transistors has lagged behind. [4-5]. GeneSiC is developing an innovative SiC power switch, a “Super” Junction Transistor (SJT) in 1.2 kV to 10 kV voltage ratings for high efficiency power conversion in Switched ...
tl494c, tl494i, tl494m, tl494y pulse-width
... Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is cu ...
... Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is cu ...
PAM2327 Description Pin Assignments
... When the converter output is shorted or the device is overloaded,each high-side MOSFET current- limit event turns off the high-side MOSFET and turns on the low-side MOSFET. An internal counter is used to count the each current-limit event. The counter is reset after consecutive high-side MOSFETs tur ...
... When the converter output is shorted or the device is overloaded,each high-side MOSFET current- limit event turns off the high-side MOSFET and turns on the low-side MOSFET. An internal counter is used to count the each current-limit event. The counter is reset after consecutive high-side MOSFETs tur ...
SIGC186T170R3E
... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automo ...
... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automo ...
Evaluates: MAX16803 MAX16803 Evaluation Kit General Description Features
... The MAX16803 EV kit demonstrates a high-output-current LED driver with accurate current control based on the MAX16803 current regulator. This EV kit is capable of supplying regulated output currents of up to 350mA and can run at supply voltages between 6.5V and 40V. If the supply voltage is above th ...
... The MAX16803 EV kit demonstrates a high-output-current LED driver with accurate current control based on the MAX16803 current regulator. This EV kit is capable of supplying regulated output currents of up to 350mA and can run at supply voltages between 6.5V and 40V. If the supply voltage is above th ...
NTD_Final_Ch3-3_3-4 DOWNLOAD
... recombination. This layer improves turn-off speed by reducing the minority carrier injection quantity and by raising the recombination rate during the switching transition. However, on-state voltage drop increases due to this layer. Therefore, PT IGBT has trade-off characteristics when compared to t ...
... recombination. This layer improves turn-off speed by reducing the minority carrier injection quantity and by raising the recombination rate during the switching transition. However, on-state voltage drop increases due to this layer. Therefore, PT IGBT has trade-off characteristics when compared to t ...
AAT4625 数据资料DataSheet下载
... a short circuit were to occur on the load, there would be a demand for more current than allowed by the internal current limiting circuit and the voltage at the device output will drop. This causes the AAT4625 to dissipate more power than in normal operation, causing the die temperature to increase. ...
... a short circuit were to occur on the load, there would be a demand for more current than allowed by the internal current limiting circuit and the voltage at the device output will drop. This causes the AAT4625 to dissipate more power than in normal operation, causing the die temperature to increase. ...
Thermal runaway
Thermal runaway refers to a situation where an increase in temperature changes the conditions in a way that causes a further increase in temperature, often leading to a destructive result. It is a kind of uncontrolled positive feedback.In other words, ""thermal runaway"" describes a process which is accelerated by increased temperature, in turn releasing energy that further increases temperature. In chemistry (and chemical engineering), this risk is associated with strongly exothermic reactions that are accelerated by temperature rise. In electrical engineering, thermal runaway is typically associated with increased current flow and power dissipation, although exothermic chemical reactions can be of concern here too. Thermal runaway can occur in civil engineering, notably when the heat released by large amounts of curing concrete is not controlled. In astrophysics, runaway nuclear fusion reactions in stars can lead to nova and several types of supernova explosions, and also occur as a less dramatic event in the normal evolution of solar mass stars, the ""helium flash"".There are also concerns regarding global warming that a global average increase of 3-4 degrees Celsius above the preindustrial baseline could lead to a further unchecked increase in surface temperatures. For example, releases of methane, a greenhouse gas more potent than CO2, from wetlands, melting permafrost and continental margin seabed clathrate deposits could be subject to positive feedback.