1.3 Historical View of Microwave Transistors
... • The advances in CMOS processing, continuous scaling of gate length, progress in SOI (silicon on insulator) technology, and development of Si LDMOSFETs (laterally diffused MOSFET) suitability of MOSFETs and CMOS for microwave applications • The SOI concept seems to be more promising because of th ...
... • The advances in CMOS processing, continuous scaling of gate length, progress in SOI (silicon on insulator) technology, and development of Si LDMOSFETs (laterally diffused MOSFET) suitability of MOSFETs and CMOS for microwave applications • The SOI concept seems to be more promising because of th ...
ZXTPS718MC
... express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: C. ...
... express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: C. ...
Circuit Intuitions: Source Degeneration
... We said in the previous article that looking into a node, one can see the Thevenin or Norton equivalent circuit for that node. We now look deeper into one particular circuit that consists of an NMOS transistor with a resistor in series with its source terminal in a configuration known as NMOS transi ...
... We said in the previous article that looking into a node, one can see the Thevenin or Norton equivalent circuit for that node. We now look deeper into one particular circuit that consists of an NMOS transistor with a resistor in series with its source terminal in a configuration known as NMOS transi ...
TEMPERATURE DEPENDENT ELECTRIC FAN_0
... Pin 1 Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 Pin 11 Pin 12 Pin 13 Pin 14 Pin 15 Pin 16 ...
... Pin 1 Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 Pin 11 Pin 12 Pin 13 Pin 14 Pin 15 Pin 16 ...
IGC114T170S8RH
... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Inf ...
... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Inf ...
Altech/ABL Sursum Miniature Circuit Breakers
... are coupled to the tripping latch pins of the VEA or MA to which they are attached, reliably producing trips at the drop-out voltage and preventing resetting when less than 85% line voltage is present. The Undervoltage Trip is provided with at least 6-inch pigtails of stranded fixture wire for hook- ...
... are coupled to the tripping latch pins of the VEA or MA to which they are attached, reliably producing trips at the drop-out voltage and preventing resetting when less than 85% line voltage is present. The Undervoltage Trip is provided with at least 6-inch pigtails of stranded fixture wire for hook- ...
SIGC186T170R3E
... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Inf ...
... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Inf ...
Advanced Monolithic Systems
... Because IADJ is very small it needs to be considered only when very precise output voltage setting is required. For best regulation the top of the resistor divider should be connected directly to the Sense pin. ...
... Because IADJ is very small it needs to be considered only when very precise output voltage setting is required. For best regulation the top of the resistor divider should be connected directly to the Sense pin. ...
Using one circuit to control another
... referred to as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The figure on the left is a N-channel MOSFET that is off. The depletion region between the source and drain is rich in positive holes, which prevents electrons to flow. When the gate experiences a positive charge, an electr ...
... referred to as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The figure on the left is a N-channel MOSFET that is off. The depletion region between the source and drain is rich in positive holes, which prevents electrons to flow. When the gate experiences a positive charge, an electr ...
LP5907-Q1 Automotive 250-mA, Ultra-Low
... 250 mA of output current. Designed to meet the requirements of RF and analog circuits, the LP5907Q1 device provides low noise, high PSRR, low quiescent current, and low line or load transient response figures. Using new innovative design techniques, the LP5907-Q1 offers class-leading noise performan ...
... 250 mA of output current. Designed to meet the requirements of RF and analog circuits, the LP5907Q1 device provides low noise, high PSRR, low quiescent current, and low line or load transient response figures. Using new innovative design techniques, the LP5907-Q1 offers class-leading noise performan ...
An Overview of Failure Analysis of Tantalum Capacitors
... show if the CAPs have been subjected to reverse bias. Stability of the circuit is also an important factor. High current and voltage surges can also damage the dielectric, which can lead to a failure. Localized heating will appear as evidence of both abusive application conditions and a weak dielect ...
... show if the CAPs have been subjected to reverse bias. Stability of the circuit is also an important factor. High current and voltage surges can also damage the dielectric, which can lead to a failure. Localized heating will appear as evidence of both abusive application conditions and a weak dielect ...
IXDR502 / IXDS502 - IXYS Power
... package is soldered on a PCB. The θJ-A (typ) is 200 °C/W with no special provisions on the PCB, but because the center pad provides a low thermal resistance to the die, it is easy to reduce the θJ-A by adding connected copper pads or traces on the PCB. These can reduce the θJ-A (typ) to 125 °C/W eas ...
... package is soldered on a PCB. The θJ-A (typ) is 200 °C/W with no special provisions on the PCB, but because the center pad provides a low thermal resistance to the die, it is easy to reduce the θJ-A by adding connected copper pads or traces on the PCB. These can reduce the θJ-A (typ) to 125 °C/W eas ...
MAX8559 Dual, 300mA, Low-Noise Linear Regulator General Description
... and delivers at least 300mA of continuous output current. It offers low output noise and low dropout of only 60mV at 100mA. Typical output noise for this device is 32µVRMS, and PSRR is 70dB at 10kHz. Designed with an internal P-channel MOSFET pass transistor, the MAX8559 maintains a low 115µA supply ...
... and delivers at least 300mA of continuous output current. It offers low output noise and low dropout of only 60mV at 100mA. Typical output noise for this device is 32µVRMS, and PSRR is 70dB at 10kHz. Designed with an internal P-channel MOSFET pass transistor, the MAX8559 maintains a low 115µA supply ...
FSEZ1016A Primary-Side-Regulation PWM Integrated Power MOSFET FSEZ10 16A
... Supply. The power supply pin. IC operating current and MOSFET driving current are supplied using this pin. This pin is connected to an external VDD capacitor of typically 10µF. The threshold voltages for startup and turn-off are 16V and 5V, respectively. The operating current is lower than 5mA. No c ...
... Supply. The power supply pin. IC operating current and MOSFET driving current are supplied using this pin. This pin is connected to an external VDD capacitor of typically 10µF. The threshold voltages for startup and turn-off are 16V and 5V, respectively. The operating current is lower than 5mA. No c ...
Vertical scaling of 0.25-/spl mu/ emitter InP/InGaAs single
... This paper reports InGaAs/InP SHBTs with current cut-off frequencies of 452 GHz: The highest reported for any bipolar transistor to date. The exceptional RF performance was achieved through vertical scaling of the epitaxial layer structure, thereby allowing a reduction of device transit time. As a r ...
... This paper reports InGaAs/InP SHBTs with current cut-off frequencies of 452 GHz: The highest reported for any bipolar transistor to date. The exceptional RF performance was achieved through vertical scaling of the epitaxial layer structure, thereby allowing a reduction of device transit time. As a r ...
Datasheet - Integrated Device Technology
... NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. Device will meet specifications after thermal equilibrium has been reached under t ...
... NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. Device will meet specifications after thermal equilibrium has been reached under t ...
Thermal runaway
Thermal runaway refers to a situation where an increase in temperature changes the conditions in a way that causes a further increase in temperature, often leading to a destructive result. It is a kind of uncontrolled positive feedback.In other words, ""thermal runaway"" describes a process which is accelerated by increased temperature, in turn releasing energy that further increases temperature. In chemistry (and chemical engineering), this risk is associated with strongly exothermic reactions that are accelerated by temperature rise. In electrical engineering, thermal runaway is typically associated with increased current flow and power dissipation, although exothermic chemical reactions can be of concern here too. Thermal runaway can occur in civil engineering, notably when the heat released by large amounts of curing concrete is not controlled. In astrophysics, runaway nuclear fusion reactions in stars can lead to nova and several types of supernova explosions, and also occur as a less dramatic event in the normal evolution of solar mass stars, the ""helium flash"".There are also concerns regarding global warming that a global average increase of 3-4 degrees Celsius above the preindustrial baseline could lead to a further unchecked increase in surface temperatures. For example, releases of methane, a greenhouse gas more potent than CO2, from wetlands, melting permafrost and continental margin seabed clathrate deposits could be subject to positive feedback.