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BDTIC CoolMOS™ Primary Side MOSFET Selection for LLC Topology
BDTIC CoolMOS™ Primary Side MOSFET Selection for LLC Topology

... Equation (3) as defined appears to formulate the condition for ZVS from the perspective of resonant energy. However, the fact is that equation (3) is derived from the voltage equation of node A and more importantly, the charging/discharging time for the output capacitance of the power MOSFET in the ...
Large Current Rectifiers - Universidad Técnica Federico Santa María
Large Current Rectifiers - Universidad Técnica Federico Santa María

... current with a much reduced ripple, while still operating at the same relatively low switching frequency. The control of this new ...
ECE3110 Prelabs
ECE3110 Prelabs

... • IS – reverse saturation current current that flows under reverse bias • VT – thermal voltage = 0.0285V at room temperature ...
KA317L 3-Terminal 0.1A Positive Adjustable Regulator KA317L — 3-T
KA317L 3-Terminal 0.1A Positive Adjustable Regulator KA317L — 3-T

... 10 Hz < f < 10 kHz VO = 10 V, f = 120 Hz, without CADJ VO = 10 V, f = 120 Hz, CADJ = 10 μF TJ = +125°C, 1000 Hours ...
Rowe Jackpotting, Fs, Bucket Power On and Crashes
Rowe Jackpotting, Fs, Bucket Power On and Crashes

... coins drop to the coin cup. The door closes and then the motor/s run and reload the bucket for the next vend. When the escrow bucket door opens by itself without a bill/vend the coins drop to the coin cup. The machine has jackpotted. An F or BUCKET POWER ON error code may, or may not, be displayed w ...
Ch2. State of the art topologies and improvements
Ch2. State of the art topologies and improvements

... whole switching period, there is no circulating current as seen in phase shift full bridge. For asymmetrical half bridge, there are several drawbacks too. One problem is that the voltage stress on the secondary rectifier is asymmetrical and related to duty cycle. In some situations, the voltage stre ...
A Molecular Half-Wave Rectifier - Whitesides Group
A Molecular Half-Wave Rectifier - Whitesides Group

... tunneling, hopping, and field emission as mechanisms of charge transport. Aviram and Ratner proposed in 1974 that molecules could act as diodes.5 Since then, a variety of molecular diodes have been claimed,611 including one example by us.12 In general, reports of these diodes assume that rectificatio ...
Electronic Components
Electronic Components

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IGBT vs. MOSFET - Renesas e
IGBT vs. MOSFET - Renesas e

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04_ELC4345_Fall2013_DC_DC_Buck_PPT

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Testing Electronic Components
Testing Electronic Components

... If the bar is thinner, the resistance is higher. If the bar is longer, the resistance is higher. If the material of the bar is changed, the resistance is higher. When carbon is mixed with other elements, its resistance increases and this knowledge is used to make RESISTORS. Resistors have RESISTANCE ...
Slide 1
Slide 1

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Chapter 2 Thyristor
Chapter 2 Thyristor

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MOD I - SNGCE DIGITAL LIBRARY
MOD I - SNGCE DIGITAL LIBRARY

... controlled switches in the forward direction and as uncontrolled switches in the reverse direction. The Triac works as a controlled switch in both directions. Directional Voltage capabilities of Static Switches. A bipolar power transistor is a static switch that can only switch current in the forwar ...
High Speed Fuses
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Mechanical Actuation System
Mechanical Actuation System

... • A TRIAC, or TRIode for Alternating Current is an electronic component approximately equivalent to two silicon-controlled rectifiers (SCRs/thyristors) joined in inverse parallel (paralleled but with the polarity reversed) and with their gates connected together • bidirectional electronic switch wh ...
CQY36N - Vishay
CQY36N - Vishay

... the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (ii ...
BYV98-50, BYV98-100, BYV98-150, BYV98-200 Ultra-Fast
BYV98-50, BYV98-100, BYV98-150, BYV98-200 Ultra-Fast

... the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (ii ...
BASIC ELECTRONICS
BASIC ELECTRONICS

... supply) then there will be no voltage in the circuit to test! It must be plugged in (even if it doesn't seem to be working) Voltage is always measured between two points There is no way to measure voltage with only one probe, it is like trying to check continuity with only one probe. You must have t ...
12 Multimeter - Fluke Meter Repair Fluke Networks Repair
12 Multimeter - Fluke Meter Repair Fluke Networks Repair

... Do not use the meter if the meter or test leads look damaged, or if you suspect that the meter is not operating properly. Turn off power to the circuit under test before cutting, unsoldering, or breaking the circuit. Small amounts of current can be dangerous. Do not apply more than 600 V rms between ...
Secondary-side rectification for an LLC resonant converter featuring
Secondary-side rectification for an LLC resonant converter featuring

... into the DVS pins when the corresponding SR power MOSFET is off. In fact, when one power MOSFET is off (and the other is conducting) its drain-to-source voltage is slightly higher than twice the output voltage; if this exceeds the voltage rating of the internal clamp (VccZ = 36 V typ.), RD1,2 has to ...
PDF:213KB
PDF:213KB

... Gate turn-off (GTO) thyristors are able to not only turn on the main current but also turn it off, provided with a gate drive circuit. Unlike conventional thyristors, they have no commutation circuit, downsizing application systems while improving efficiency. They are the most suitable for high-curr ...
Development of Compound Semiconductor Devices— In Search of
Development of Compound Semiconductor Devices— In Search of

... with two different semiconductors are called a hetero-junction, and the method of crystal growth of semiconductor with very few defects is called epitaxial growth method (epitaxy). The origin of the word “epitaxy” is Greek; “epi-” means “on” and “taxis” means “lining-up.” Therefore epitaxy means lin ...
CM1231-02SO 2, 4 and 8-Channel Low-Capacitance ESD Protection Array
CM1231-02SO 2, 4 and 8-Channel Low-Capacitance ESD Protection Array

... Conceptually, an ESD protection device performs the following actions upon a strike of ESD discharge into the protected ASIC (see Figure 1). Resistance (RDYN) is not significantly lower than the ASIC’s I/O cell circuitry, then the ASIC will have to absorb a large amount of the EOS energy, and may be ...
MOSFET
MOSFET

... due to their appreciable current carrying and offstate voltage blocking capability with low onstate voltage drop. • They have managed to replace BJTs in many applications due to their simpler gate drive requirements and higher positive temperature coefficient which allows devices to be paralleled fo ...
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Diode



In electronics, a diode is a two-terminal electronic component that conducts primarily in one direction (asymmetric conductance); it has low (ideally zero) resistance to the flow of current in one direction, and high (ideally infinite) resistance in the other. A semiconductor diode, the most common type today, is a crystalline piece of semiconductor material with a p–n junction connected to two electrical terminals. A vacuum tube diode has two electrodes, a plate (anode) and a heated cathode. Semiconductor diodes were the first semiconductor electronic devices. The discovery of crystals' rectifying abilities was made by German physicist Ferdinand Braun in 1874. The first semiconductor diodes, called cat's whisker diodes, developed around 1906, were made of mineral crystals such as galena. Today, most diodes are made of silicon, but other semiconductors such as selenium or germanium are sometimes used.
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