Buck converter class notes
... • Occurs for light loads, or low operating frequencies, where the inductor current eventually hits zero during the switchopen state • The diode opens to prevent backward current flow ...
... • Occurs for light loads, or low operating frequencies, where the inductor current eventually hits zero during the switchopen state • The diode opens to prevent backward current flow ...
4 And 6 Tube Nixie Clock Kit Assembly Instructions
... metal oxide varistor (MOV). Should the input power exceed 175VDC, the MOV will short out the input, passing a large current through the fuse. The fuse will then trip, and shut down the circuit. If this happens, the clock will need to be repaired by replacing the fuse, but a potentially dangerous ove ...
... metal oxide varistor (MOV). Should the input power exceed 175VDC, the MOV will short out the input, passing a large current through the fuse. The fuse will then trip, and shut down the circuit. If this happens, the clock will need to be repaired by replacing the fuse, but a potentially dangerous ove ...
Infineon Application Note Reverse Conduction IGBT for Induction
... Compared to previous generations based on the NPT-cell design thinner wafer substrates can be used to increase the conduction and switching performance. Furthermore new trade-offs between the turn-off energy and the saturation voltage can be reached, which was not possible with planar cells in commo ...
... Compared to previous generations based on the NPT-cell design thinner wafer substrates can be used to increase the conduction and switching performance. Furthermore new trade-offs between the turn-off energy and the saturation voltage can be reached, which was not possible with planar cells in commo ...
the pin diode circuit designers` handbook
... passivated devices may be driven into reverse voltage breakdown without the reverse voltage characteristic collapsing. Microsemi PIN diodes offer significant electrical and thermal advantages compared to PIN diodes manufactured by other suppliers. The Microsemi PIN diode is generally constructed usi ...
... passivated devices may be driven into reverse voltage breakdown without the reverse voltage characteristic collapsing. Microsemi PIN diodes offer significant electrical and thermal advantages compared to PIN diodes manufactured by other suppliers. The Microsemi PIN diode is generally constructed usi ...
Industrial IGBT Modules Explanation of Technical Information
... calculated with equation (4). Thus, in order to give a current rating of a module, the corresponding junction and case temperature has to be specified, as shown for example in Figure 6. Please note that current ratings without defined temperature conditions have no technical meaning at all. ...
... calculated with equation (4). Thus, in order to give a current rating of a module, the corresponding junction and case temperature has to be specified, as shown for example in Figure 6. Please note that current ratings without defined temperature conditions have no technical meaning at all. ...
Cobham Microwave
... Triple balanced: – 2-18 GHz : MXC-01: Sampling in progress for several programs (e.g. radar altimeters) ...
... Triple balanced: – 2-18 GHz : MXC-01: Sampling in progress for several programs (e.g. radar altimeters) ...
Reverse Conduction IGBT for Inductive Cooking
... inducted in a circuit is directly proportional to the time rate of change of magnetic flux though the circuit”. Heinrich Lenz formed in a later stage the “The polarity of the inducted EMF is such that it tends to produce a current that will create a magnetic flux to oppose the change in magnetic flu ...
... inducted in a circuit is directly proportional to the time rate of change of magnetic flux though the circuit”. Heinrich Lenz formed in a later stage the “The polarity of the inducted EMF is such that it tends to produce a current that will create a magnetic flux to oppose the change in magnetic flu ...
Buck converter
... • Lowering Iout (and, therefore, Pout ) moves the circuit toward discontinuous operation ...
... • Lowering Iout (and, therefore, Pout ) moves the circuit toward discontinuous operation ...
Onboard welder using a GM Delco 140 Amp alternator
... Finding the right one... Alternators are capable of generating increasingly higher voltages relative to the their RPM. When they're used in automotive charging circuits they are always regulated by an external or internal regulator circuit to maintain output voltage below 15 volts so that the batter ...
... Finding the right one... Alternators are capable of generating increasingly higher voltages relative to the their RPM. When they're used in automotive charging circuits they are always regulated by an external or internal regulator circuit to maintain output voltage below 15 volts so that the batter ...
Transistors - La Salle University
... many transistors connected to one another – the socalled “tyranny of numbers.” This problem was solved by the “monolithic idea” – the idea the many circuit elements (mainly transistors) could be placed on the same piece of semiconductor, i.e. an integrated circuit (IC). In 1958 Jack Kilby of Texas I ...
... many transistors connected to one another – the socalled “tyranny of numbers.” This problem was solved by the “monolithic idea” – the idea the many circuit elements (mainly transistors) could be placed on the same piece of semiconductor, i.e. an integrated circuit (IC). In 1958 Jack Kilby of Texas I ...
Device Physics
... substrate well becomes available as a significant circuit element. This BJT can be used as a low-gain element in a design. The opposite side of this convenience occurs when the BJT shows up as an unwanted parasitic element. For deep sub-micron CMOS, higher-order effects that were negligible have bec ...
... substrate well becomes available as a significant circuit element. This BJT can be used as a low-gain element in a design. The opposite side of this convenience occurs when the BJT shows up as an unwanted parasitic element. For deep sub-micron CMOS, higher-order effects that were negligible have bec ...
MAX3863 2.7Gbps Laser Driver with Modulation Compensation General Description
... to the laser diode. When EN is low, the modulation and bias outputs at the MOD pin are enabled. When EN is high or floating, the output is disabled. In the disabled condition, bias and modulation currents are off. ...
... to the laser diode. When EN is low, the modulation and bias outputs at the MOD pin are enabled. When EN is high or floating, the output is disabled. In the disabled condition, bias and modulation currents are off. ...
Document
... positive charge carriers or holes (p-type), or of negative carriers or electrons (n-type). Ohmic contacts at each end form the source (S) and drain (D). A pn-junction is formed on one or both sides of the channel, or surrounding it, using a region with doping opposite to that of the channel, and bia ...
... positive charge carriers or holes (p-type), or of negative carriers or electrons (n-type). Ohmic contacts at each end form the source (S) and drain (D). A pn-junction is formed on one or both sides of the channel, or surrounding it, using a region with doping opposite to that of the channel, and bia ...
FSA6157 Low-RON SPDT (0.8Ω) Negative
... Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and d ...
... Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and d ...
OIP A 67 dBm Multistacked Junction Varactor 3
... When connecting varactor stacks in series, the applied RF voltage will be divided over the stacks. Since the (remaining) nonlinearities of these varactor stacks are excited with a voltage that is times lower, their resulting nonlinear currents will be reduced. One of the key advantages of the NTSVS ...
... When connecting varactor stacks in series, the applied RF voltage will be divided over the stacks. Since the (remaining) nonlinearities of these varactor stacks are excited with a voltage that is times lower, their resulting nonlinear currents will be reduced. One of the key advantages of the NTSVS ...
Solution-processed hybrid perovskite photodetectors with high detectivity ARTICLE Letian Dou
... responsivity (R), detectivity (D*), noise equivalent power (NEP), linear dynamic range (LDR) and response speed. As briefly introduced later, we evaluate the photodetector performance on the basis of these parameters. Recently, a group of organic/inorganic hybrid perovskite materials were reported wi ...
... responsivity (R), detectivity (D*), noise equivalent power (NEP), linear dynamic range (LDR) and response speed. As briefly introduced later, we evaluate the photodetector performance on the basis of these parameters. Recently, a group of organic/inorganic hybrid perovskite materials were reported wi ...
MAX3863 - Maxim Part Number Search
... Excluding IBIAS, IMOD, IBIASMON, IMODMON, IFAIL, and IPWC. Input clock and data are AC-coupled. Guaranteed by design and characterization. An external capacitor at APCFILT1 and APCFILT2 is used to set the time constant. For both data inputs DATA+, DATA- and clock inputs CLK+, CLK-. Measured using a ...
... Excluding IBIAS, IMOD, IBIASMON, IMODMON, IFAIL, and IPWC. Input clock and data are AC-coupled. Guaranteed by design and characterization. An external capacitor at APCFILT1 and APCFILT2 is used to set the time constant. For both data inputs DATA+, DATA- and clock inputs CLK+, CLK-. Measured using a ...
Transistors, Logic Gates and Karnaugh Maps
... many transistors connected to one another – the socalled “tyranny of numbers.” This problem was solved by the “monolithic idea” – the idea the many circuit elements (mainly transistors) could be placed on the same piece of semiconductor, i.e. an integrated circuit (IC). In 1958 Jack Kilby of Texas I ...
... many transistors connected to one another – the socalled “tyranny of numbers.” This problem was solved by the “monolithic idea” – the idea the many circuit elements (mainly transistors) could be placed on the same piece of semiconductor, i.e. an integrated circuit (IC). In 1958 Jack Kilby of Texas I ...
LT3748 – 100V Isolated Flyback Controller
... The LT3748 is a current mode switching regulator controller designed specifically for the isolated flyback topology. The special problem normally encountered in such circuits is that information relating to the output voltage on the isolated secondary side of the transformer must be communicated to ...
... The LT3748 is a current mode switching regulator controller designed specifically for the isolated flyback topology. The special problem normally encountered in such circuits is that information relating to the output voltage on the isolated secondary side of the transformer must be communicated to ...
RB558VA150
... scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk ...
... scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk ...
Electronic Devices and Circuits
... the thermal energy. The energy required to detach the fifth electron form the impurity atom is very small of the order of 0.01ev for Ge and 0.05 eV for Si. The effect of doping creates a discrete energy level called donor energy level in the forbidden band gap with energy level Ed slightly less than ...
... the thermal energy. The energy required to detach the fifth electron form the impurity atom is very small of the order of 0.01ev for Ge and 0.05 eV for Si. The effect of doping creates a discrete energy level called donor energy level in the forbidden band gap with energy level Ed slightly less than ...
RB162M-30
... scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk ...
... scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk ...
AN0020_9076_UMS Products ESD sensitivity
... attachment creates an equipotential balance between all items and personnel. Electrostatic protection can be maintained at a potential different from “zero” voltage ground potential, as long as all items in the system are at the same potential. b) Avoid a discharge from any charged ESD sensitive dev ...
... attachment creates an equipotential balance between all items and personnel. Electrostatic protection can be maintained at a potential different from “zero” voltage ground potential, as long as all items in the system are at the same potential. b) Avoid a discharge from any charged ESD sensitive dev ...
Diode
In electronics, a diode is a two-terminal electronic component that conducts primarily in one direction (asymmetric conductance); it has low (ideally zero) resistance to the flow of current in one direction, and high (ideally infinite) resistance in the other. A semiconductor diode, the most common type today, is a crystalline piece of semiconductor material with a p–n junction connected to two electrical terminals. A vacuum tube diode has two electrodes, a plate (anode) and a heated cathode. Semiconductor diodes were the first semiconductor electronic devices. The discovery of crystals' rectifying abilities was made by German physicist Ferdinand Braun in 1874. The first semiconductor diodes, called cat's whisker diodes, developed around 1906, were made of mineral crystals such as galena. Today, most diodes are made of silicon, but other semiconductors such as selenium or germanium are sometimes used.