Session II305 Semiconductors - International Atomic Energy Agency
... When a positive voltage is applied to the n-type material and negative voltage to the p-type material, the electrons are pulled further away from this region creating a much thicker depletion region The depletion region acts as the sensitive volume of the detector Ionizing radiation entering t ...
... When a positive voltage is applied to the n-type material and negative voltage to the p-type material, the electrons are pulled further away from this region creating a much thicker depletion region The depletion region acts as the sensitive volume of the detector Ionizing radiation entering t ...
IXYS MDO500-12N1 datasheet
... ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ...
... ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ...
FDS6961A Dual N-Channel Logic Level PowerTrench MOSFET
... produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and ...
... produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and ...
AP7331 300mA, LOW QUIESCENT CURRENT, FAST TRANSIENT LOW DROPOUT LINEAR REGULATOR
... resistance, and ambient temperature, the thermal protection circuit may cycle on and off. This cycling limits the heat dissipation of the regulator, protecting it from damage due to overheating. ...
... resistance, and ambient temperature, the thermal protection circuit may cycle on and off. This cycling limits the heat dissipation of the regulator, protecting it from damage due to overheating. ...
AP2552/ AP2553/ AP2552A/ AP2553A Description Pin Assignments
... Short-Circuit or Overload condition that occurs when the part is enabled. ...
... Short-Circuit or Overload condition that occurs when the part is enabled. ...
Avalanche Effect
... Avalanche breakdown causes high flow of current under reverse bias condition! ...
... Avalanche breakdown causes high flow of current under reverse bias condition! ...
UNIT I BJT AND SEMICONDUCTORS PART A What is barrier potential ?
... effective resistance of the junction itself allowing or blocking current flow through the diode. Then the depletion layer widens with an increase in the application of a reverse voltage and narrows with an increase in the application of a forward voltage. This is due to the differences in the electr ...
... effective resistance of the junction itself allowing or blocking current flow through the diode. Then the depletion layer widens with an increase in the application of a reverse voltage and narrows with an increase in the application of a forward voltage. This is due to the differences in the electr ...
Operating Instructions
... This equipment operates at voltages as high as 3400 VAC. Always use the 3 wire line cord, plugged into a properly grounded outlet. The equipment should always be operated in accordance with the operating instructions. ...
... This equipment operates at voltages as high as 3400 VAC. Always use the 3 wire line cord, plugged into a properly grounded outlet. The equipment should always be operated in accordance with the operating instructions. ...
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... As you can see voltage drop on MOSFET channel is lower than diode’s voltage drop for I < 8A. Above 8A diode’s voltage drop is lower so it will conduct instead of MOSFET channel. ...
... As you can see voltage drop on MOSFET channel is lower than diode’s voltage drop for I < 8A. Above 8A diode’s voltage drop is lower so it will conduct instead of MOSFET channel. ...
The Transistor - labsanywhere.net
... 1959- Texas Instruments put 10 transistors on one piece of silicon. First company to use Silicon instead of Germanium Used in Apollo Program to achieve moon landing – transistors integrated on pieces of silicon offered lower power and weight. 1961-69 ...
... 1959- Texas Instruments put 10 transistors on one piece of silicon. First company to use Silicon instead of Germanium Used in Apollo Program to achieve moon landing – transistors integrated on pieces of silicon offered lower power and weight. 1961-69 ...
FFD04H60S Hyperfast II Diode — Features
... Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard perform ...
... Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard perform ...
Circuit Note CN-0130
... 25 mA) is powered from AVDD/AVSS; the medium current range, named EXT2, is powered from HCAVDD2/HCAVSS2; the high current range, named EXT1, is powered from HCAVDD1/HCAVSS1. The HC supplies should always be equal to or less than the AVDD/AVSS rails. The purpose of the HC rails is to allow the user t ...
... 25 mA) is powered from AVDD/AVSS; the medium current range, named EXT2, is powered from HCAVDD2/HCAVSS2; the high current range, named EXT1, is powered from HCAVDD1/HCAVSS1. The HC supplies should always be equal to or less than the AVDD/AVSS rails. The purpose of the HC rails is to allow the user t ...
FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET
... support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use prov ...
... support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use prov ...
DC Measurements Y1 Physics Lab 2016/17 V R A + - I V R A +
... Diode Resistance (45 mins) The circuit in figure 8 is a practical realization of the resistance-measuring circuit in figure 1a. Here, a diode D1 replaces the unknown resistance R. The voltage across the diode is measured using myDAQ analogue-input channel AI1 (connected differentially across the dio ...
... Diode Resistance (45 mins) The circuit in figure 8 is a practical realization of the resistance-measuring circuit in figure 1a. Here, a diode D1 replaces the unknown resistance R. The voltage across the diode is measured using myDAQ analogue-input channel AI1 (connected differentially across the dio ...
QS5U26
... This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. ...
... This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. ...
The pn Junction
... example of an analog circuit is a linear amplifier. A linear amplifier magnifies an input signal and produces an output signal whose amplitude is larger and directly proportional to the input signal. The vast majority of signals in the “real world” are analog. Voice communications and music are just ...
... example of an analog circuit is a linear amplifier. A linear amplifier magnifies an input signal and produces an output signal whose amplitude is larger and directly proportional to the input signal. The vast majority of signals in the “real world” are analog. Voice communications and music are just ...
ZXMC10A816N8 Product Summary Features
... B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regul ...
... B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regul ...
SI99-01 - Semtech
... PCBs with power and ground planes should be utilized. Multilayer boards not only minimize the loop area between power and ground, but also mitigate the effects of high frequency EMI fields that are produced by the ESD pulse. If a multilayer board is not feasible, then multiple power and ground trace ...
... PCBs with power and ground planes should be utilized. Multilayer boards not only minimize the loop area between power and ground, but also mitigate the effects of high frequency EMI fields that are produced by the ESD pulse. If a multilayer board is not feasible, then multiple power and ground trace ...
2 - Oxford University Press
... Risk of injury Injury can occur when live electrical parts are exposed and can be touched, or when metalwork, which is meant to be earthed, becomes live at a dangerous voltage. The likelihood of touching live parts is increased during electrical testing and fault-finding, when conductors at dangerous ...
... Risk of injury Injury can occur when live electrical parts are exposed and can be touched, or when metalwork, which is meant to be earthed, becomes live at a dangerous voltage. The likelihood of touching live parts is increased during electrical testing and fault-finding, when conductors at dangerous ...
LTC4415 - Dual 4A Ideal Diodes with Adjustable Current Limit
... Soft-Start to Limit Inrush Current on Start-Up Status Pins to Indicate Forward Diode Conduction Current and Thermal Limit with Warning Thermally Enhanced 16-Lead MSOP and DFN (3mm × 5mm) Packages ...
... Soft-Start to Limit Inrush Current on Start-Up Status Pins to Indicate Forward Diode Conduction Current and Thermal Limit with Warning Thermally Enhanced 16-Lead MSOP and DFN (3mm × 5mm) Packages ...
An RF–DC Converter with Wide Dynamic Range Input Matching For
... The Schottky diode (named after German physicist Walter H. Schottky) also known as hot carrier diode is a semiconductor diode with a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power appl ...
... The Schottky diode (named after German physicist Walter H. Schottky) also known as hot carrier diode is a semiconductor diode with a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power appl ...
Diode
In electronics, a diode is a two-terminal electronic component that conducts primarily in one direction (asymmetric conductance); it has low (ideally zero) resistance to the flow of current in one direction, and high (ideally infinite) resistance in the other. A semiconductor diode, the most common type today, is a crystalline piece of semiconductor material with a p–n junction connected to two electrical terminals. A vacuum tube diode has two electrodes, a plate (anode) and a heated cathode. Semiconductor diodes were the first semiconductor electronic devices. The discovery of crystals' rectifying abilities was made by German physicist Ferdinand Braun in 1874. The first semiconductor diodes, called cat's whisker diodes, developed around 1906, were made of mineral crystals such as galena. Today, most diodes are made of silicon, but other semiconductors such as selenium or germanium are sometimes used.