Document
... We can go back to the cutoff region from here by reducing the bias voltage between base and emitter. Since the BE junction is just a P-N junction, this current is essentially a diode current. Reducing this bias voltage to zero will reduce the emitter current to zero. In this case, -IB = IC =IC0 . We ...
... We can go back to the cutoff region from here by reducing the bias voltage between base and emitter. Since the BE junction is just a P-N junction, this current is essentially a diode current. Reducing this bias voltage to zero will reduce the emitter current to zero. In this case, -IB = IC =IC0 . We ...
AN-4191 - Advanced GreenBridge™ Technology Enables
... driver pins (G1 and G4) falls down below the turn-on voltage of MOSFETs in Table 5 and then the internal N-ch MOSFETs (Q1 and Q4) becomes turned off in order to block the reverse current from the auxiliary power source to PSE. ...
... driver pins (G1 and G4) falls down below the turn-on voltage of MOSFETs in Table 5 and then the internal N-ch MOSFETs (Q1 and Q4) becomes turned off in order to block the reverse current from the auxiliary power source to PSE. ...
AP2552-53(A) - Diodes Incorporated
... Short-Circuit or Overload condition that occurs when the part is enabled. ...
... Short-Circuit or Overload condition that occurs when the part is enabled. ...
ZXSC410/ZXSC420/ZXSC440 Description Pin Assignments
... The choice of switching transistor has a major impact on the converter efficiency. For optimum performance, a bipolar transistor with low VCE(SAT) and high gain is required. The VCEO of the switching transistor is also an important parameter as this sees the full output voltage when the transistor i ...
... The choice of switching transistor has a major impact on the converter efficiency. For optimum performance, a bipolar transistor with low VCE(SAT) and high gain is required. The VCEO of the switching transistor is also an important parameter as this sees the full output voltage when the transistor i ...
Exp. No #1 Date: DIODE CLIPPERS AND CLAMPERS OBJECTIVE The purpose
... EEE392 Measurements and Analog Circuits Lab ...
... EEE392 Measurements and Analog Circuits Lab ...
PAM8408
... If either the UP or DOWN pin remains low after the first volume transition the volume will change again, but this time after 10 cycles. The followed transition occurs at 4 cycles for each volume transition. This is intended to provide the user with a volume control that pauses briefly after initial ...
... If either the UP or DOWN pin remains low after the first volume transition the volume will change again, but this time after 10 cycles. The followed transition occurs at 4 cycles for each volume transition. This is intended to provide the user with a volume control that pauses briefly after initial ...
N-channel 800 V, 0.95 typ., 5 A MDmesh™ K5 Power MOSFET in a
... times") ISD = 5 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 16: "Test circuit for inductive load switching and diode recovery times") ...
... times") ISD = 5 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 16: "Test circuit for inductive load switching and diode recovery times") ...
IDl Isl liola
... 27_1 bits. Eye diagrams of the same quality were observed for the data stream length 2 31 _ 1 bits. Figure 7 shows the relative response versus frequency of a photoreceiver from a different wafer (RG 32--68) from that in Figures 5 and 6. For this wafer the threshold vo ltages are 0 and -0.7 V fo r t ...
... 27_1 bits. Eye diagrams of the same quality were observed for the data stream length 2 31 _ 1 bits. Figure 7 shows the relative response versus frequency of a photoreceiver from a different wafer (RG 32--68) from that in Figures 5 and 6. For this wafer the threshold vo ltages are 0 and -0.7 V fo r t ...
Polymer Physics Ph.D. Course
... “forward biased”: p-side more positive than n-side; “reverse biased”: n-side more positive than p-side; forward biased diode: ▪ the direction of the electric field is from p-side towards n-side ▪ p-type charge carriers (positive holes) in p-side are pushed towards and across the p-n boundary ...
... “forward biased”: p-side more positive than n-side; “reverse biased”: n-side more positive than p-side; forward biased diode: ▪ the direction of the electric field is from p-side towards n-side ▪ p-type charge carriers (positive holes) in p-side are pushed towards and across the p-n boundary ...
Night-Vision Scopes
... work in faint natural light, and the other is active, meaning that it requires supplemental infrared illumination. They include surplus first-generation imaging tubes. Although, they have been superseded by more advanced devices, they will, nevertheless, provide adequate sensitivity for most hobbyis ...
... work in faint natural light, and the other is active, meaning that it requires supplemental infrared illumination. They include surplus first-generation imaging tubes. Although, they have been superseded by more advanced devices, they will, nevertheless, provide adequate sensitivity for most hobbyis ...
PAM8603E Description Features Applications Pin Assignments
... decoupling is achieved by using two capacitors of different types that target different types of noise frequency transients, spikes or digital hash on the line, a good low equivalent-series-resistance (ESR) ceramic capacitor, typically 1.0µF placed as close as possilbe to the device VDD terminal wor ...
... decoupling is achieved by using two capacitors of different types that target different types of noise frequency transients, spikes or digital hash on the line, a good low equivalent-series-resistance (ESR) ceramic capacitor, typically 1.0µF placed as close as possilbe to the device VDD terminal wor ...
Document
... region must be overcome in order for the external source to cause current. For a silicon diode, this is about 0.7 V. ...
... region must be overcome in order for the external source to cause current. For a silicon diode, this is about 0.7 V. ...
ZXCT1107/1109/1110 LOW POWER HIGH-SIDE CURRENT MONITORS Description
... current sensing, with small differences. The ZXCT1110 has a separate ground pin whereas the ZXCT1107 and ZXCT1109 do not. The use of ZXCT1110 allows reduction of the absolute current measurement error in some applications by providing a reduced output offset current. The ZXCT1107 provides a mirror i ...
... current sensing, with small differences. The ZXCT1110 has a separate ground pin whereas the ZXCT1107 and ZXCT1109 do not. The use of ZXCT1110 allows reduction of the absolute current measurement error in some applications by providing a reduced output offset current. The ZXCT1107 provides a mirror i ...
Electronics Overview - UCSD Department of Physics
... capacitors become less “resistive” at high frequency inductors become more “resistive” at high frequency bigger capacitors are more transparent bigger inductors are less transparent i (√1) indicates 90 phase shift between voltage and current • after all, V = IZ, so Z = V/I • thus if V is sine wave ...
... capacitors become less “resistive” at high frequency inductors become more “resistive” at high frequency bigger capacitors are more transparent bigger inductors are less transparent i (√1) indicates 90 phase shift between voltage and current • after all, V = IZ, so Z = V/I • thus if V is sine wave ...
AP1122 1A LOW DROPOUT POSITIVE REGULATOR Description
... 2. See thermal regulation specifications for changes in output voltage due to heating effects. Line and load regulation are measured at a constant junction temperature by low duty cycle pulse testing. Load regulation is measured at the output lead = 1/18” from the package. 3. Line and load regulatio ...
... 2. See thermal regulation specifications for changes in output voltage due to heating effects. Line and load regulation are measured at a constant junction temperature by low duty cycle pulse testing. Load regulation is measured at the output lead = 1/18” from the package. 3. Line and load regulatio ...
S. Avasthi, S. Lee, Y.-L. Loo, J.C. Sturm, "Role of Majority and Minority Carrier Barriers Silicon/Organic Hybrid Heterojunction Solar Cells," Advanced Materials 23, pp. 5762-5766 (2011)
... as 10−13 A cm−2, which allows these cells to achieve very high power conversion efficiencies (>20%).[2] However the performance comes at a price; the high temperatures and ultraclean materials required to fabricate the p–n junction make these solar cells very expensive. The Schottky barrier, fabricat ...
... as 10−13 A cm−2, which allows these cells to achieve very high power conversion efficiencies (>20%).[2] However the performance comes at a price; the high temperatures and ultraclean materials required to fabricate the p–n junction make these solar cells very expensive. The Schottky barrier, fabricat ...
Section 1 TVS Diode Definition and General Electronics Applications
... A sudden change in the electrical condition of any circuit can cause a transient voltage to be generated from the energy stored in its inductance and capacitance. The rate of change in current in an inductor will generate a switching induced transient voltage. Energizing the transformer primary • Wh ...
... A sudden change in the electrical condition of any circuit can cause a transient voltage to be generated from the energy stored in its inductance and capacitance. The rate of change in current in an inductor will generate a switching induced transient voltage. Energizing the transformer primary • Wh ...
M3 Semiconductor Analyzer Manual
... The first panel displays the HFE (static current gain) of the transistor. The M3 can measure current gain in the range of 5 to 999. The current gain varies according to the operating condition of the transistor. The polarization of the transistor under test is not fixed but depends on the actual HFE ...
... The first panel displays the HFE (static current gain) of the transistor. The M3 can measure current gain in the range of 5 to 999. The current gain varies according to the operating condition of the transistor. The polarization of the transistor under test is not fixed but depends on the actual HFE ...
How to Select an Appropriate ESD Device
... where the operating voltage of the circuit is much lower than the holdover voltage of the crowbar device (GDT). A clamping device (Figure 1) essentially limits the transient voltage to a set value (above the operating voltage of the circuit being protected). When the applied voltage reaches the devi ...
... where the operating voltage of the circuit is much lower than the holdover voltage of the crowbar device (GDT). A clamping device (Figure 1) essentially limits the transient voltage to a set value (above the operating voltage of the circuit being protected). When the applied voltage reaches the devi ...
Document
... Diodes must be able to withstand a reverse voltage when they are reverse biased. This is called the peak inverse voltage (PIV). The PIV depends on the type of rectifier circuit and the maximum secondary voltage. For example, in a full-wave circuit, if one diode is conducting (assuming 0 V drop), the ...
... Diodes must be able to withstand a reverse voltage when they are reverse biased. This is called the peak inverse voltage (PIV). The PIV depends on the type of rectifier circuit and the maximum secondary voltage. For example, in a full-wave circuit, if one diode is conducting (assuming 0 V drop), the ...
AP2101/AP2111 Description Pin Assignments
... sense circuitry turns the power switch off, thus preventing the power switch from damage. Hysteresis is built into the thermal sense circuit allowing the device to cool down approximately 25°C before the switch turns back on. The switch continues to cycle in this manner until the load fault or input ...
... sense circuitry turns the power switch off, thus preventing the power switch from damage. Hysteresis is built into the thermal sense circuit allowing the device to cool down approximately 25°C before the switch turns back on. The switch continues to cycle in this manner until the load fault or input ...
DN05051 - 120 VAC, Dimmable, Linear 3‐stage, Parallel
... parallel with each other. CCR2 is on, as well as all the Q3 through Q5 and Q7 through Q9 transistors. The D5, D6, and D7 diodes are all reverse-biased. CCR current (when above the LED Vf turn-on voltage of 36 V) is split down the four strings of LEDs. The second configuration, when the bridge output ...
... parallel with each other. CCR2 is on, as well as all the Q3 through Q5 and Q7 through Q9 transistors. The D5, D6, and D7 diodes are all reverse-biased. CCR current (when above the LED Vf turn-on voltage of 36 V) is split down the four strings of LEDs. The second configuration, when the bridge output ...
Diode
In electronics, a diode is a two-terminal electronic component that conducts primarily in one direction (asymmetric conductance); it has low (ideally zero) resistance to the flow of current in one direction, and high (ideally infinite) resistance in the other. A semiconductor diode, the most common type today, is a crystalline piece of semiconductor material with a p–n junction connected to two electrical terminals. A vacuum tube diode has two electrodes, a plate (anode) and a heated cathode. Semiconductor diodes were the first semiconductor electronic devices. The discovery of crystals' rectifying abilities was made by German physicist Ferdinand Braun in 1874. The first semiconductor diodes, called cat's whisker diodes, developed around 1906, were made of mineral crystals such as galena. Today, most diodes are made of silicon, but other semiconductors such as selenium or germanium are sometimes used.