Biology 177: Principles of Modern Microscopy
... tD is the fluorescence lifetime of the donor in the absence of FRET k2 is the dipole-dipole orientation factor, QD is the quantum yield of the donor in the absence of the acceptor is the refractive index of the intervening medium, FD (l) is the fluorescence emission intensity at a given wavelength ...
... tD is the fluorescence lifetime of the donor in the absence of FRET k2 is the dipole-dipole orientation factor, QD is the quantum yield of the donor in the absence of the acceptor is the refractive index of the intervening medium, FD (l) is the fluorescence emission intensity at a given wavelength ...
In this lab you will use the phenomenon of interference... thickness of thin films. Two interference techniques, Michelson and... Thin Film Measurement 1 Introduction
... Repeat this procedure a few times to ensure an accurate measurement. The measurement accuracy is based on the ability to find the zero path length for each side of the well. This zero path length point can be hard to determine so several measurements and then an average is needed. Can you suggest a ...
... Repeat this procedure a few times to ensure an accurate measurement. The measurement accuracy is based on the ability to find the zero path length for each side of the well. This zero path length point can be hard to determine so several measurements and then an average is needed. Can you suggest a ...
The Spectrophotometer
... the portion of the electromagnetic radiation used in these machines. Since we are using ions in solution, not isolated atoms, the absorption observed is a broad band pattern rather than a simple line spectrum. In the sample absorption spectrum shown below, you see a broad peak over 200 nm wide in th ...
... the portion of the electromagnetic radiation used in these machines. Since we are using ions in solution, not isolated atoms, the absorption observed is a broad band pattern rather than a simple line spectrum. In the sample absorption spectrum shown below, you see a broad peak over 200 nm wide in th ...
Molecular Beam Epitaxy
... real-time and on a subnanometer scale Reflection high-energy electron diffraction (RHEED) In-situ X-ray diffraction (XRD) Reflectance difference spectroscopy (RDS) Scanning tunneling and atomic force microscopy (STM, AFM) ...
... real-time and on a subnanometer scale Reflection high-energy electron diffraction (RHEED) In-situ X-ray diffraction (XRD) Reflectance difference spectroscopy (RDS) Scanning tunneling and atomic force microscopy (STM, AFM) ...
Experimental approaches to analyse thermophysical
... CONCLUSION & OUTLOOK • Preliminary STA tests are useful to identify reaction free temperature intervals, reaction enthalpies, cycling stability and not expected effects • Evaluation of the apparent cp(T) of educt and product can be evaluated in one run using the hf-DSC • λeff measurements of powder ...
... CONCLUSION & OUTLOOK • Preliminary STA tests are useful to identify reaction free temperature intervals, reaction enthalpies, cycling stability and not expected effects • Evaluation of the apparent cp(T) of educt and product can be evaluated in one run using the hf-DSC • λeff measurements of powder ...
All students are asked for bringing your own samples which
... limit beyond which the microscope cannot distinguish two very small adjacent points from a single point. Resolution is specified in linear units, typically Angstroms or nanometers. Just to keep things interesting, better resolution is called higher resolution, even though it is specified by a lower ...
... limit beyond which the microscope cannot distinguish two very small adjacent points from a single point. Resolution is specified in linear units, typically Angstroms or nanometers. Just to keep things interesting, better resolution is called higher resolution, even though it is specified by a lower ...
MICROSCOPY
... fitted with a light source, although extra sources (such as a fibreoptic light) can be used to highlight features of interest in the object. They also offer a large depth of field, a great advantage ...
... fitted with a light source, although extra sources (such as a fibreoptic light) can be used to highlight features of interest in the object. They also offer a large depth of field, a great advantage ...
Lecture Slides - School of Chemical Sciences
... Why Thermodynamics? The macroscopic description of a system of ~1023 particles may involve only a few variables! “Simple systems”: Macroscopically homogeneous, isotropic, uncharged, large enough that surface effects can be neglected, not acted upon by electric, magnetic, or gravitational fields. ...
... Why Thermodynamics? The macroscopic description of a system of ~1023 particles may involve only a few variables! “Simple systems”: Macroscopically homogeneous, isotropic, uncharged, large enough that surface effects can be neglected, not acted upon by electric, magnetic, or gravitational fields. ...
PROJECT TEM
... a TEM with a specimen holder capable of maintaining the specimen at liquid nitrogen or liquid helium temperatures. This allows imaging specimens prepared in vitreous ice, the preferred preparation technique for imaging individual molecules or macromolecular assemblies. A TEM can be modified into a s ...
... a TEM with a specimen holder capable of maintaining the specimen at liquid nitrogen or liquid helium temperatures. This allows imaging specimens prepared in vitreous ice, the preferred preparation technique for imaging individual molecules or macromolecular assemblies. A TEM can be modified into a s ...
Dissipative tunneling - Physik Uni
... "bounce" solution qB(Z). The bounce q~(~) is a 0-periodic orbit that rocks back and forth through the classically forbidden region of the potential V(q) [19]. This bounce trajectory is not a minimum of the action S~ ; but a saddle point solution with an unstable direction. For temperatures T > To, t ...
... "bounce" solution qB(Z). The bounce q~(~) is a 0-periodic orbit that rocks back and forth through the classically forbidden region of the potential V(q) [19]. This bounce trajectory is not a minimum of the action S~ ; but a saddle point solution with an unstable direction. For temperatures T > To, t ...
PDF208kB - Alpes Lasers
... quantum well 共3QW兲 active region separated from the injection/relaxation region by a tunneling barrier.1 In the second design, the active region consists of a superlattice, which for the best performances can be ‘‘chirped’’ to compensate for the applied field.3,4 In both cases, the necessity to conf ...
... quantum well 共3QW兲 active region separated from the injection/relaxation region by a tunneling barrier.1 In the second design, the active region consists of a superlattice, which for the best performances can be ‘‘chirped’’ to compensate for the applied field.3,4 In both cases, the necessity to conf ...
Energy and angular distributions of electrons resulting from barrier
... location in the focus the ionization is sometimes tunneling and sometimes barrier-suppression. Hence for a detailed comparison of the experimental results with those predicted by theory we should integrate the results of the latter over the intensity distribution of the laser radiation in the focus. ...
... location in the focus the ionization is sometimes tunneling and sometimes barrier-suppression. Hence for a detailed comparison of the experimental results with those predicted by theory we should integrate the results of the latter over the intensity distribution of the laser radiation in the focus. ...
Scanning-probe spectroscopy of semiconductor donor molecules LETTERS
... Figure 1 Capacitance-based scanning-probe technique to detect donor charging. a, A schematic diagram of the key layers in the gallium arsenide [001] heterostructure sample and the measurement technique. An excitation voltage can cause charge to resonate between the Si donor layer and a two-dimension ...
... Figure 1 Capacitance-based scanning-probe technique to detect donor charging. a, A schematic diagram of the key layers in the gallium arsenide [001] heterostructure sample and the measurement technique. An excitation voltage can cause charge to resonate between the Si donor layer and a two-dimension ...
Recollison physics - Attosecond Science
... a surface disappears into the tip. The resulting current is what provides information about the surface structure. In a laser STM, an avalanche detector—such as a microchannel plate— can count the total number of electrons or ions created per laser shot at each angle between the molecular axis and t ...
... a surface disappears into the tip. The resulting current is what provides information about the surface structure. In a laser STM, an avalanche detector—such as a microchannel plate— can count the total number of electrons or ions created per laser shot at each angle between the molecular axis and t ...
Tunneling Through a Potential Barrier - EMU I-REP
... The WKB (Wentzel, Kramers and Brillouin) method is the most widely used approximation for solving tunneling problems [8] , and while it is often applied to one-dimensional cases , it is possible to modify it in different ways to solve two or three-dimensional tunneling. In this part we discuss this ...
... The WKB (Wentzel, Kramers and Brillouin) method is the most widely used approximation for solving tunneling problems [8] , and while it is often applied to one-dimensional cases , it is possible to modify it in different ways to solve two or three-dimensional tunneling. In this part we discuss this ...
Chapter 7 Notes PowerPoint Version
... the empirical formula and experimental molar mass of a compound. Step 1: Determine the molar mass of the given empirical formula. Step 2: Solve for n by dividing the experimental molar mass by the molar mass of the empirical formula. *Remember: n(empirical formula) = molecular formula ...
... the empirical formula and experimental molar mass of a compound. Step 1: Determine the molar mass of the given empirical formula. Step 2: Solve for n by dividing the experimental molar mass by the molar mass of the empirical formula. *Remember: n(empirical formula) = molecular formula ...
Calculations with Chemical Formulas and Equations
... One can find the percentage of the mass of a compound that comes from each of the elements in the compound by using ...
... One can find the percentage of the mass of a compound that comes from each of the elements in the compound by using ...
Controlling surface statistical properties using bias voltage: Atomic
... the last section, it is possible to obtain some quantitative information about the effect of bias voltage on surface topography of the Co/NiO/Si(100) system. Figure 2 presents the structure function S(r) of the surface grown at the different bias voltages, using Eq. (6). The slope of each curve at t ...
... the last section, it is possible to obtain some quantitative information about the effect of bias voltage on surface topography of the Co/NiO/Si(100) system. Figure 2 presents the structure function S(r) of the surface grown at the different bias voltages, using Eq. (6). The slope of each curve at t ...
Wallace-etalJAP2014-bias-dependence-and
... InGaN/GaN MQW active region emitting at around 490 nm and a 140 nm p-GaN cap with a measured carrier concentration of 3 1017 cm3. The quantum wells and GaN barriers were 2.4 6 0.1 nm and 6.9 6 0.1 nm, respectively. The grown wafers were processed into 1 1 mm2 mesa etched, side contacted LEDs wi ...
... InGaN/GaN MQW active region emitting at around 490 nm and a 140 nm p-GaN cap with a measured carrier concentration of 3 1017 cm3. The quantum wells and GaN barriers were 2.4 6 0.1 nm and 6.9 6 0.1 nm, respectively. The grown wafers were processed into 1 1 mm2 mesa etched, side contacted LEDs wi ...
Joule Expansion Imaging Techniques on Microlectronic Devices
... enlarged by the thermal phenomenon and if two thermal sources are, for instance, 1 µm away one from another, they will not be individually distinguishable. At f=10 kHz, this issue is even more critical as the thermal diffusion length is about 50 µm for silicon. In addition, this phenomenon is worsen ...
... enlarged by the thermal phenomenon and if two thermal sources are, for instance, 1 µm away one from another, they will not be individually distinguishable. At f=10 kHz, this issue is even more critical as the thermal diffusion length is about 50 µm for silicon. In addition, this phenomenon is worsen ...
Advantages of FTIR spectroscopy
... mid-infrared spectroscopy is is of the Fourier transform type. This is the reason why only FTIR technology will be described in the following. Bruker Optics has specialized in the field of FT-IR spectroscopy since 1974, and is one of the leading manufacturers of FT-IR, FT-NIR and FT-Raman spectromet ...
... mid-infrared spectroscopy is is of the Fourier transform type. This is the reason why only FTIR technology will be described in the following. Bruker Optics has specialized in the field of FT-IR spectroscopy since 1974, and is one of the leading manufacturers of FT-IR, FT-NIR and FT-Raman spectromet ...
Materialanalytik Praktikum UV-VIS Absorption B507
... of the optical properties of noble metal nanoparticles can enable us to realize some new functional system, in particular in nano-scale. For instance, the tunable optical properties of nanostructures can be applied as materials for surface-enhanced spectroscopy, optical filters, plasmonic devices an ...
... of the optical properties of noble metal nanoparticles can enable us to realize some new functional system, in particular in nano-scale. For instance, the tunable optical properties of nanostructures can be applied as materials for surface-enhanced spectroscopy, optical filters, plasmonic devices an ...
The EMF technique
... • The definition of transport numbers and why they are interesting • The basics of the EMF method ...
... • The definition of transport numbers and why they are interesting • The basics of the EMF method ...
Scanning tunneling spectroscopy
Scanning tunneling spectroscopy (STS), an extension of scanning tunneling microscopy (STM), is used to provide information about the density of electrons in a sample as a function of their energy.In scanning tunneling microscopy, a metal tip is moved over a conducting sample without making mechanical contact. A bias voltage between the sample and tip allows a current to flow between the tip and the sample even though they are not in contact. This can occur because of quantum mechanical tunneling, hence the name of the instrument.The scanning tunneling microscope is used to obtain ""topographs"" - topographic maps - of surfaces. The tip is rastered across a surface and (in constant current mode), a constant current is maintained between the tip and the sample by adjusting the height of the tip. A plot of the tip height at all measurement positions on the raster provides the topograph. These topographic images can obtain information that is atomically resolved, and images of metal and semiconductor surfaces can be obtained with atomic precision.However, the scanning tunneling microscope does not measure the height of surface features. This can be shown when a molecule is adsorbed on a surface. The STM image may appear to have either increased or decreased height at that feature, although the geometry alone is certainly an increased height. A detailed analysis of the way in which an image is formed shows that the transmission of the electric current between the tip and the sample depends on two factors: (1) the geometry of the sample and (2) the arrangement of the electrons in the sample. The arrangement of the electrons in the sample is described quantum mechanically by an ""electron density"". The electron density is a function of both position and energy, and is formally described as the local density of electron states, abbreviated as local density of states (LDOS), which is a function of energy.Spectroscopy, in its most general sense, refers to a measurement of the number of something as a function of energy. For scanning tunneling spectroscopy the scanning tunneling microscope is used to measure the number of electrons (the LDOS) as a function of the electron energy. The electron energy is set by the electrical potential difference (voltage) between the sample and the tip. The location is set by the position of the tip.At its simplest, a ""scanning tunneling spectrum"" is obtained by placing a scanning tunneling microscope tip above a particular place on the sample. With the height of the tip fixed, the electron tunneling current is then measured as a function of electron energy by varying the voltage between the tip and the sample (the tip to sample voltage sets the electron energy). The change of the current with the energy of the electrons is the simplest spectrum that can be obtained, it is often referred to as an I-V curve. As is shown below, it is the slope of the I-V curve at each voltage (often called the dI/dV-curve) which is more fundamental because dI/dV corresponds to the electron density of states at the local position of the tip, the LDOS.