loss-free resistor-based power factor correction using a
									
... solution for practical implementation than the basic bridgeless topology in terms of sensing the input voltage and current variables. Basically, the semi-bridgeless rectifier is configured by two different boost converters, with an extra diode for each boost, that operate during each half-line cycle ...
                        	... solution for practical implementation than the basic bridgeless topology in terms of sensing the input voltage and current variables. Basically, the semi-bridgeless rectifier is configured by two different boost converters, with an extra diode for each boost, that operate during each half-line cycle ...
									Slide 1 - WSU EECS
									
... Structure and Operation of MOS Transistor • The two p+ regions will be current-conducting terminals of this device. • A conducting channel is eventually formed through applied gate voltage in the section between the drain and the source diffusion regions. • The channel Length and Width are very impo ...
                        	... Structure and Operation of MOS Transistor • The two p+ regions will be current-conducting terminals of this device. • A conducting channel is eventually formed through applied gate voltage in the section between the drain and the source diffusion regions. • The channel Length and Width are very impo ...
									Graphenes with nanoholes and CH(CF) nanoislands
									
... Thanks to its high charge carrier mobility graphene is expected to emerge as an excellent material for radiofrequency electronic applications. Despite of many fascinating properties, the semimetallic nature of graphene complicates the application in the semiconductor nanoelectronics. In the recent y ...
                        	... Thanks to its high charge carrier mobility graphene is expected to emerge as an excellent material for radiofrequency electronic applications. Despite of many fascinating properties, the semimetallic nature of graphene complicates the application in the semiconductor nanoelectronics. In the recent y ...
									m-lagrande
									
... this means that most of the voltages are of lower potential than the ground. • A few of the parts were not available through normal means, so I substituted. It worked out, so I’m satisfied. • For simplicity, I modeled the output of an electric guitar as a .1 V sin wave. This isn’t completely correct ...
                        	... this means that most of the voltages are of lower potential than the ground. • A few of the parts were not available through normal means, so I substituted. It worked out, so I’m satisfied. • For simplicity, I modeled the output of an electric guitar as a .1 V sin wave. This isn’t completely correct ...
									Thermal detectors
									
... Sensitivity is a function of wavelength, depending on the detector type. For quantum detectors S initially increases with a wavelength, reaches maximum and then drops to zero at a certain wavelength λC. Sensitivities of quantum detectors are higher than these for thermal detectors and response times ...
                        	... Sensitivity is a function of wavelength, depending on the detector type. For quantum detectors S initially increases with a wavelength, reaches maximum and then drops to zero at a certain wavelength λC. Sensitivities of quantum detectors are higher than these for thermal detectors and response times ...
									NDT2955 P-Channel Enhancement Mode Field Effect Transistor  April 2002
									
... support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when ...
                        	... support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when ...
									FDS6975 Dual P-Channel, Logic Level, PowerTrench MOSFET
									
... support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when ...
                        	... support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when ...
									chapter 1 – electronic principles - ja505
									
... are repelled from the negative terminal. Unlike charges attract, so the electrons are also attracted towards the positive terminal.  They flow in one direction only. This is called direct current or DC. Most circuits in motor vehicles use direct current. ...
                        	... are repelled from the negative terminal. Unlike charges attract, so the electrons are also attracted towards the positive terminal.  They flow in one direction only. This is called direct current or DC. Most circuits in motor vehicles use direct current. ...
									Programmable SAE 800 Single-/Dual-/Triple- Tone Gong
									
... external resistor to ground. The chip temperature is monitored by the junction control. At temperatures of more then approx. 170 ˚C the stop input will switch the output current II to zero. The output current is enabled again once the chip has cooled down to approx. 150 ˚C. Current Amplifier The cur ...
                        	... external resistor to ground. The chip temperature is monitored by the junction control. At temperatures of more then approx. 170 ˚C the stop input will switch the output current II to zero. The output current is enabled again once the chip has cooled down to approx. 150 ˚C. Current Amplifier The cur ...
									Sensors and detectors RACE
									
... Device which measures the angolar displacement of a shaft in order to get informations about the angular speed (for example of a motor) It is made by a rotary disc and a Led/fototransistor system. On the circumference of the disc a set of holes has been set all at the same distance on from the other ...
                        	... Device which measures the angolar displacement of a shaft in order to get informations about the angular speed (for example of a motor) It is made by a rotary disc and a Led/fototransistor system. On the circumference of the disc a set of holes has been set all at the same distance on from the other ...
									Extraction of MOSFET Parameters using 4007 Array
									
... 1.2. Using the methodology described in reference [5], find IS and VT0 of the MOSFET.  Plot ID vs VG and gmg/ID vs VG.  Your measurements should range from at least if0.01 to if100.  What is the thermal voltage associated with your measurements?  What is the approximate value of n in weak inv ...
                        	... 1.2. Using the methodology described in reference [5], find IS and VT0 of the MOSFET.  Plot ID vs VG and gmg/ID vs VG.  Your measurements should range from at least if0.01 to if100.  What is the thermal voltage associated with your measurements?  What is the approximate value of n in weak inv ...
									Sub-1.0 pF Quad ESD Array
									
... NUP4114 Series, SZNUP4114HMR6T1G inductance will provide significant benefits in transient immunity. Even with good board layout, some disadvantages are still present when discrete diodes are used to suppress ESD events across datalines and the supply rail. Discrete diodes with good transient power ...
                        	... NUP4114 Series, SZNUP4114HMR6T1G inductance will provide significant benefits in transient immunity. Even with good board layout, some disadvantages are still present when discrete diodes are used to suppress ESD events across datalines and the supply rail. Discrete diodes with good transient power ...
									Component Identification: Digital
									
... number system). • The ascending rows in this truth table represent a count of (0-3) in the binary number system if you look at inputs X and Y together. • We will learn to count in binary later. ...
                        	... number system). • The ascending rows in this truth table represent a count of (0-3) in the binary number system if you look at inputs X and Y together. • We will learn to count in binary later. ...
									Unit 2 Review: Chemistry
									
... When charging an object by induction, a charged object is used to induce a charge in a neutral object and then ground the charged object so it retains the charge. This newly charged object has the opposite charge to the charge on the charging object. ...
                        	... When charging an object by induction, a charged object is used to induce a charge in a neutral object and then ground the charged object so it retains the charge. This newly charged object has the opposite charge to the charge on the charging object. ...
									DS55122 Triple Line Receiver
									
... Note 4: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. Except for “Operating Temperature Range” they are not meant to imply that the devices should be operated at these limits. The table of “Electrical Characteristics” provides conditions for ...
                        	... Note 4: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. Except for “Operating Temperature Range” they are not meant to imply that the devices should be operated at these limits. The table of “Electrical Characteristics” provides conditions for ...
									svc
									
... AC system bus-bar and the low voltage bus-bar to which the thyristor valves are connected. Once the SVC capacity is determined, the best way to design the valve is to use the thyristor current capability at its maximum. Then the minimum necessary AC voltage is derived to obtain the given capacity. T ...
                        	... AC system bus-bar and the low voltage bus-bar to which the thyristor valves are connected. Once the SVC capacity is determined, the best way to design the valve is to use the thyristor current capability at its maximum. Then the minimum necessary AC voltage is derived to obtain the given capacity. T ...
									A nanomechanical resonator shuttling single electrons at radio
									
... a well defined geometry. Another advantage of nanomechanical resonators, machined out of Silicon-OnInsulator (SOI) material, is their insensitivity to thermal and electrical shocks as has been shown in their application for electrometry [5, 6]. This and the high speed of operation enable direct int ...
                        	... a well defined geometry. Another advantage of nanomechanical resonators, machined out of Silicon-OnInsulator (SOI) material, is their insensitivity to thermal and electrical shocks as has been shown in their application for electrometry [5, 6]. This and the high speed of operation enable direct int ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.