• Study Resource
  • Explore
    • Arts & Humanities
    • Business
    • Engineering & Technology
    • Foreign Language
    • History
    • Math
    • Science
    • Social Science

    Top subcategories

    • Advanced Math
    • Algebra
    • Basic Math
    • Calculus
    • Geometry
    • Linear Algebra
    • Pre-Algebra
    • Pre-Calculus
    • Statistics And Probability
    • Trigonometry
    • other →

    Top subcategories

    • Astronomy
    • Astrophysics
    • Biology
    • Chemistry
    • Earth Science
    • Environmental Science
    • Health Science
    • Physics
    • other →

    Top subcategories

    • Anthropology
    • Law
    • Political Science
    • Psychology
    • Sociology
    • other →

    Top subcategories

    • Accounting
    • Economics
    • Finance
    • Management
    • other →

    Top subcategories

    • Aerospace Engineering
    • Bioengineering
    • Chemical Engineering
    • Civil Engineering
    • Computer Science
    • Electrical Engineering
    • Industrial Engineering
    • Mechanical Engineering
    • Web Design
    • other →

    Top subcategories

    • Architecture
    • Communications
    • English
    • Gender Studies
    • Music
    • Performing Arts
    • Philosophy
    • Religious Studies
    • Writing
    • other →

    Top subcategories

    • Ancient History
    • European History
    • US History
    • World History
    • other →

    Top subcategories

    • Croatian
    • Czech
    • Finnish
    • Greek
    • Hindi
    • Japanese
    • Korean
    • Persian
    • Swedish
    • Turkish
    • other →
 
Profile Documents Logout
Upload
Inclusion of Switching Loss in the Averaged Equivalent Circuit Model
Inclusion of Switching Loss in the Averaged Equivalent Circuit Model

Semiconductor Quantum Dots Kaijie Xu Department of Physics and Astronomy Michigan State University
Semiconductor Quantum Dots Kaijie Xu Department of Physics and Astronomy Michigan State University

... In addition to exciton, biexciton also exists in QDs. Under appropriate excitation conditions the s-shells can be filled with two electron-hole pairs. Due to both the attractive (e-h) and repulsive (e-e, h-h) Coulomb interaction between these carrier pairs the “biexciton” decay typically deviates in ...
LATCHES AND FILP FLOPS
LATCHES AND FILP FLOPS

... Ideally, when VCE exceeds 0.7 V, the base-collector junction becomes reverse-biased and the transistor goes into active region. As VCE continues to increase, the collector current IC level remains essentially constant for a given value of IB. This is shown by the portion of the characteristic curve ...
9 – The Power MOSFET 3
9 – The Power MOSFET 3

... a feedback capacitance from the input and output. The objective is to reduce the feedback gateto-drain resistance. The output capacitance between the drain and source, Cds , does not affect the turn-on and turn-off MOSFET switching characteristics. Figure 4.16 shows how Cgd and Cgs vary under increa ...
CN-0030: AD5390/AD5391/AD5392通道监控功能
CN-0030: AD5390/AD5391/AD5392通道监控功能

... single-supply, 8-channel, 14-bit DAC. Devices are available both in 64-lead LFCSP and 52-lead LQFP packages. All channels have an on-chip output amplifier with rail-to-rail operation. The AD5390/AD5391/AD5392 contain a channel monitor function that consists of a multiplexer addressed via the serial ...
Chapter 7 Electricity
Chapter 7 Electricity

... • Surrounding each charge is a “field” of influence • A charge placed in an electric field will be either attracted or repelled by the electric field. • Fields are represented by arrows pointing in the direction a positive charge in the field would move. ...
Circuit Note CN-0131
Circuit Note CN-0131

CHARGE TRANSFER DEVICE
CHARGE TRANSFER DEVICE

Slide 1
Slide 1

... operation into a 1:1 VSWR.  The Class-B PA operated at 71% efficiency, while the Class-E PA operated at 92% efficiency.  The performance of the Class-B and –E circuits were then compared over eight points on a 2:1 VSWR circle. ...
File
File

MUR480EG, MUR4100EG - SWITCHMODE Power Rectifier
MUR480EG, MUR4100EG - SWITCHMODE Power Rectifier

... ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/ ...
Spice - UCSD CSE - University of California San Diego
Spice - UCSD CSE - University of California San Diego

... Incorporating Transistor Devices (1) •Direct Simulation of Transistor Devices Makes Linear Solver Diverge •Conventional Method: Abstract Device as Current Waveform, Ignore the Interaction with VDD/VSS. • How to include Transistor Devices? Inside the inner most NewtonRaphson linearization iteration, ...
Designing to Protect MAX2140`s Internal ESD
Designing to Protect MAX2140`s Internal ESD

BYV26 Very Fast Soft–Recovery Avalanche
BYV26 Very Fast Soft–Recovery Avalanche

Teach for 10-15 minutes at the start of the lab... A.  Current.
Teach for 10-15 minutes at the start of the lab... A. Current.

... So the potential energy of the positive charges is much higher on the positive side of the battery as the electric potential is higher on that side. Once the positive charges are released at the positive side of the battery they flow through the circuit to the negative pole of the battery. For each ...
CN-0034 利用8-12位DAC AD5426/AD5432/AD5443 实现单极性、精密直流数模转换
CN-0034 利用8-12位DAC AD5426/AD5432/AD5443 实现单极性、精密直流数模转换

... operation, respectively. Because this is a current output DAC, an op amp is required for current-to-voltage (I-V) conversion at the output of the DAC. Since an op amp’s bias current and offset voltage are both important selection criteria for precision current output DACs, this circuit employs the A ...
J. Sanz-Robinson, W. Rieutort-Louis, N. Verma, S. Wagner, and J.C. Sturm, "A Full-wave Bridge Rectifier Based on Thin-film Amorphous-silicon Schottky Diodes for Wireless Power and Signal Transfer in Systems-on-plastic", MRS Meeting (APR 2012).
J. Sanz-Robinson, W. Rieutort-Louis, N. Verma, S. Wagner, and J.C. Sturm, "A Full-wave Bridge Rectifier Based on Thin-film Amorphous-silicon Schottky Diodes for Wireless Power and Signal Transfer in Systems-on-plastic", MRS Meeting (APR 2012).

... ABSTRACT BODY: As large area electronic (LAE) systems incorporate increased functionality, it is desirable to transmit signals between adjacent plastic electronic sheets through near-field wireless coupling based on inductors and capacitors. Eliminating wired contacts can enable increased system sca ...
SK2S200-150 N1738 REV.-
SK2S200-150 N1738 REV.-

... characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviati ...
7. Solar Electric System Components
7. Solar Electric System Components

... Changing the tilt angle of an array to account for seasonal changes in sun altitude is generally not required. For mid-latitude locations, a tilt angle change every three months is estimated to increase energy production about 5 percent on an annual basis. For most applications, the additional labou ...
Engineous Software Business Plan
Engineous Software Business Plan

... DOE Process Calibration of Device Simulator Robust Design of MOS Devices ...
CN0011
CN0011

... performance. It provides 32 individual voltage channels with 14 bits of resolution and a temperature stability of typically less than 3 ppm/°C. ...
human circuit game - Tech Will Save Us
human circuit game - Tech Will Save Us

... the circuit and the electrons must stop moving around the circle. 9. When the switch goes off, the flow of electrons stops, so the current stops. When this happens, the "light bulb" person stops glowing and also sits down. When the "switch" changes back to "on," by standing up, the flow begins again ...
ATLAS-CMS Electronics Workshop
ATLAS-CMS Electronics Workshop

... If at low end and Be beampipe, most of MDT system can remain At higher end, large fraction of MDT system needs replaced Occupancy makes efficiency reduce to 50 % MDT Electronics needs upgrading For radiation damage For data rates Also considering reading out only regions with a trigger. ...
Lecture 6 Diode Circuits` Applications
Lecture 6 Diode Circuits` Applications

PHYS 375, Laboratory Electronics I
PHYS 375, Laboratory Electronics I

< 1 ... 98 99 100 101 102 103 104 105 106 ... 132 >

Semiconductor device



Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.
  • studyres.com © 2025
  • DMCA
  • Privacy
  • Terms
  • Report