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CONTROL OF TRAVELLING WALLS IN A FERROMAGNETIC
CONTROL OF TRAVELLING WALLS IN A FERROMAGNETIC

... of the nanowire. The system is modeled with the one dimensional LandauLifschitz equation. In the absence of control, there exist particular solutions, which happen to be relevant for practical issues, called travelling walls. In this paper, we prove that it is possible to move from a given travellin ...
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... Electric Resistance - Example A metal hemisphere of radius Re, buried with its flat face lying in the surface of the ground, is used as an earthing electrode. It may be assumed that a current flowing to earth spreads out uniformly and radially from the electrode for a great distance. Show that, as t ...
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... A circuit consists of a capacitor C, an inductor L, a battery with emf E, and an open switch connected in series. At time t = 0 the switch is closed. (a) Find the current I(t) in the circuit as a function of time. (b) Find the voltage VC (t) across the capacitor as a function of time. (c) Find the v ...
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Physics Talk

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Giant magnetoresistance



Giant magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in thin-film structures composed of alternating ferromagnetic and non-magnetic conductive layers. The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg for the discovery of GMR.The effect is observed as a significant change in the electrical resistance depending on whether the magnetization of adjacent ferromagnetic layers are in a parallel or an antiparallel alignment. The overall resistance is relatively low for parallel alignment and relatively high for antiparallel alignment. The magnetization direction can be controlled, for example, by applying an external magnetic field. The effect is based on the dependence of electron scattering on the spin orientation.The main application of GMR is magnetic field sensors, which are used to read data in hard disk drives, biosensors, microelectromechanical systems (MEMS) and other devices. GMR multilayer structures are also used in magnetoresistive random-access memory (MRAM) as cells that store one bit of information.In literature, the term giant magnetoresistance is sometimes confused with colossal magnetoresistance of ferromagnetic and antiferromagnetic semiconductors, which is not related to the multilayer structure.
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