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unit 1 transport properties
unit 1 transport properties

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... N-type material: contains more electrons than holes P-type material: contains more holes than electrons majority carrier: the most abundant carrier minority carrier: the least abundant carrier ...
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S. Madhavi, V. Venkataraman, J.C. Sturm, and Y.H. Xie, "Low-and high-field transport properties of modulation-doped Si/SiGe and Ge/SiGe heterostructures: effect of phonon confinement in germanium quantum wells," Phys. Rev. B 61, pp. 16807-16818 (2000).
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... led to an improvement in the low-temperature Ohmic mobilities of two-dimensional electron gas 共2DEG兲 in strained silicon channels to nearly 5⫻105 cm2 /V s and in twodimensional hole gas 共2DHG兲 in strained SiGe channels to nearly 1⫻104 cm2 /V s.1–3 Recently there have been a few reports on high mobil ...
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... enters a region where there is a uniform electric field of 3500N/C directed downwards. At the point of entry of the electron into the electric field, its velocity is along a path directed at angle 30 degrees below the horizontal. Find (a) the velocity of the electron 5  10 8 s after it enters the ...
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... The C O U L O M B interaction was described by means of the F O K K E R — P L A N C K equation in the form given by L A N D A U . The collision integrals for the collisions between electrons and heavy particles where used in the approximation of an infinite mass ratio. For the functions /1 > Xi-> Xz ...
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Electron mobility

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