
HT9170 DTMF Receiver
... The steering control circuit is used for measuring the effective signal duration and for protecting against drop out of valid signals. It employs the analog delay by external RC time-constant controlled by EST. ...
... The steering control circuit is used for measuring the effective signal duration and for protecting against drop out of valid signals. It employs the analog delay by external RC time-constant controlled by EST. ...
Output Stages Class A, AB, and B Power Stages Laboratory
... Given is a triple darlington push pull output stage using the small-signal transistors BC546/BC556, the medium power transistors BD139/BD140, and the power transistors BD809 and BD810. The triple is most often used in power stages delivering more than app. 10W of signal power into a load. It allows ...
... Given is a triple darlington push pull output stage using the small-signal transistors BC546/BC556, the medium power transistors BD139/BD140, and the power transistors BD809 and BD810. The triple is most often used in power stages delivering more than app. 10W of signal power into a load. It allows ...
MC1488
... interconnecting cable. The worst possible signal on any conductor would be another driver using a plus or minus 15V, 500 mA source. The MC1488 is designed to indefinitely withstand such a short to all four outputs in a package as long as the power-supply voltages are greater than 9.0V (i.e., VS ≥ 9. ...
... interconnecting cable. The worst possible signal on any conductor would be another driver using a plus or minus 15V, 500 mA source. The MC1488 is designed to indefinitely withstand such a short to all four outputs in a package as long as the power-supply voltages are greater than 9.0V (i.e., VS ≥ 9. ...
Diapositivo 1 - European Space Agency
... results in the creation of electron-holes pairs. • If the event occurs in doped silicon the resulting charge will dissipate in a short time because of the low resistivity of the material. • If the energy of the ionization particle is very high, it can cause the creation of a large amount of carriers ...
... results in the creation of electron-holes pairs. • If the event occurs in doped silicon the resulting charge will dissipate in a short time because of the low resistivity of the material. • If the energy of the ionization particle is very high, it can cause the creation of a large amount of carriers ...
DM7417 Hex Buffers with High Voltage Open-Collector
... N3 (IIL) = total maximum input low current for all inputs tied to pull-up resistor ...
... N3 (IIL) = total maximum input low current for all inputs tied to pull-up resistor ...
DM7404 Hex Inverting Gates
... 14-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300" Wide Package Number N14A ...
... 14-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300" Wide Package Number N14A ...
Dwarkadas. J. Sanghvi College of Engineering Department of
... Figure shows the basic circuit of an IC 723 voltage regulator. This IC has a voltage reference source, an error amplifier, a series pass transistor, and a current limiting transistor all contained in one small package. The device can be connected to operate as a positive or negative voltage regulato ...
... Figure shows the basic circuit of an IC 723 voltage regulator. This IC has a voltage reference source, an error amplifier, a series pass transistor, and a current limiting transistor all contained in one small package. The device can be connected to operate as a positive or negative voltage regulato ...
DM7442A BCD to Decimal Decoder
... the safety of the device cannot be guaranteed. The device should not be operated at these limits. The parametric values defined in the Electrical Characteristics tables are not guaranteed at the absolute maximum ratings. The “Recommended Operating Conditions” table will define the conditions for act ...
... the safety of the device cannot be guaranteed. The device should not be operated at these limits. The parametric values defined in the Electrical Characteristics tables are not guaranteed at the absolute maximum ratings. The “Recommended Operating Conditions” table will define the conditions for act ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.