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Ohm`s Law
Ohm`s Law

Electic Circuits - Saddleback College
Electic Circuits - Saddleback College

... cannot flow until the circuit is complete. Complete the circuit by connecting the last lead to the low electric potential or low voltage (negative) end of the battery. Because voltage is potential difference, the voltmeter is measuring the voltage drop across R1. Record this measurement in your data ...
DC Generator-Characteristics
DC Generator-Characteristics

Using the MAX7219/7221 to Drive Higher Voltage or Current
Using the MAX7219/7221 to Drive Higher Voltage or Current

... The circuit of Figure 2 includes a level shifter to allow a higher supply voltage than 5V to be used to drive the LEDs. Q3 operates as a common-base current switch, and sinks a collector current set by resistor R2 (about 5mA using Vcascode = 5V) when the digit drive output is low. This current in tu ...
Presentation
Presentation

Chapter 5
Chapter 5

Tender No.: 07/SPS/EE/2016 Dated
Tender No.: 07/SPS/EE/2016 Dated

... SCR, MOSFET, IGBT & TRAIC – STATIC CHARECTERRISTICS TRAINER MODULE Specification: It Consists of power devices SCR, TRAIC, MOSFET, IGBT  Two no. of 12V fixed DC power supply and one no of 30V fixed power supply for characteristics of all devices  Two nos of potentiometer to vary the gate/base curr ...
Experiment 2b: TVS, Simulation using Scope
Experiment 2b: TVS, Simulation using Scope

... a. The frequency at which the voltage across the capacitor is the same magnitude as the voltage across the in-series resistor is the cross-over or break or ½ power frequency. That is an important frequency measurement for filters. The RC (Resistor Capacitor) circuit just tested is known as a high-pa ...
High-Voltage, 350mA, Adjustable Linear High-Brightness LED Driver General Description Features
High-Voltage, 350mA, Adjustable Linear High-Brightness LED Driver General Description Features

... to 40V input voltage range and delivers up to a total of 350mA to one or more strings of high-brightness LEDs (HB LEDs). The output current of the MAX16835 is adjusted by using an external current-sense resistor in series with the LEDs. An enable input allows widerange “pulsed” dimming. Wave-shaping ...
Chapter 20
Chapter 20

... to be a negative number. 9. Mark each resistor with a + at one end and a – at the other end in a way that is consistent with your choice for current direction in step 1. Outside a battery, conventional current is always directed from a higher potential (the end marked +) to a lower potential (the en ...
A New Fully Balanced Differential OTA with Common
A New Fully Balanced Differential OTA with Common

n CMOS Low Power Consumption
n CMOS Low Power Consumption

... amp's output is low, the external switch will be set to ON. This circuit generates PFM pulses. The PWM/PFM automatic switching mode switches between PWM and PFM automatically depending on the load. PWM/PFM control turns into PFM control when threshold voltage becomes lower tha ...
XC9106/XC9107Series
XC9106/XC9107Series

MAX1830/MAX1831 3A, 1MHz, Low-Voltage, Step-Down Regulators with Synchronous Rectification and Internal Switches
MAX1830/MAX1831 3A, 1MHz, Low-Voltage, Step-Down Regulators with Synchronous Rectification and Internal Switches

... constant-off-time, PWM control scheme, which includes Idle Mode™ to maintain high efficiency during lightload operation. The programmable constant-off-time architecture sets switching frequencies up to 1MHz, allowing the user to optimize performance tradeoffs between efficiency, output switching noi ...
JUMO dTRON 304/308/316 plast Compact Controller for the plastics
JUMO dTRON 304/308/316 plast Compact Controller for the plastics

... Simple operation through 4 keys. The instruments can be used as 2-state, 3-state, modulating or continuous controllers. The controller software includes a hot-channel warm-up ramp function, control loop and output level monitoring, two autotuning (self-optimization) procedures, a math and logic modu ...
PDF
PDF

LT1226 - Low Noise Very High Speed Operational Amplifier
LT1226 - Low Noise Very High Speed Operational Amplifier

... inverting input must be 1/25 or less. Straightforward gain configurations of +25 or –24 are stable, but there are a few configurations that allow the amplifier to be stable for lower signal gains (the noise gain, however, remains 25 or more). One example is the inverting amplifier shown in the typic ...
Cooling Systems
Cooling Systems

AN11045 Next generation of NXP low VCEsat transistors
AN11045 Next generation of NXP low VCEsat transistors

... The development of a new family of medium-power bipolar transistors requires a review of the whole architecture of the transistor: the chip design itself, the choice of material, the metallization of the chip, the connection between chip and package, the bonding and the consideration of the aspects ...
report
report

... section 4.2.2. These gates are made in CMOS by using a PMOS pull-up network (PUN) on top of a NMOS pull-down network (PDN); where the pull-up and pull-down outputs are DeMorgan duals of each other [2]. These gates behave much like an inverter, with the PUN charging capacitances and the PDN network d ...
Leakage Power Reduction
Leakage Power Reduction

RailClamp   Low Capacitance TVS Diode Array
RailClamp Low Capacitance TVS Diode Array

... these devices virtually eliminate the disadvantages of using discrete components to implement this topology. Consider the situation shown in Figure 1 where discrete diodes or diode arrays are configured for rail-torail protection on a high speed line. During positive duration ESD events, the top dio ...
74LVXC3245 8-Bit Dual Supply Configurable Voltage Interface Transceiver with 3-STATE Outputs 7
74LVXC3245 8-Bit Dual Supply Configurable Voltage Interface Transceiver with 3-STATE Outputs 7

... 3V level. The A Port should interface with a 3V host system and the B Port to the card slots. This device will allow the VCCB voltage source pin and I/O pins on the B Port to float when OE is HIGH. This feature is necessary to buffer data to and from a PCMCIA socket that permits PCMCIA cards to be i ...
Direct Current (DC) Circuits 1
Direct Current (DC) Circuits 1

SP720, SP721 and SP723 Turn-On and Turn-Off
SP720, SP721 and SP723 Turn-On and Turn-Off

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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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