
MAT03: Low Noise, Matched Dual PNP Transistor Data Sheet (Rev C, 02/2002)
... A fundamental requirement for accurate current mirrors and active load stages is matched transistor components. Due to the excellent VBE matching (the voltage difference between VBEs required to equalize collector current) and gain matching, the MAT03 can be used to implement a variety of standard c ...
... A fundamental requirement for accurate current mirrors and active load stages is matched transistor components. Due to the excellent VBE matching (the voltage difference between VBEs required to equalize collector current) and gain matching, the MAT03 can be used to implement a variety of standard c ...
Resistors and Resistivity©98
... circulatory system of the body. There is an “electron pump” which is analogous to the heart in its function. This pump may be a dry cell, battery or generator. There is a fluid of electronic charges (either electrons or holes – the absence of an electron), analogous to the blood. There are wires or ...
... circulatory system of the body. There is an “electron pump” which is analogous to the heart in its function. This pump may be a dry cell, battery or generator. There is a fluid of electronic charges (either electrons or holes – the absence of an electron), analogous to the blood. There are wires or ...
FSL126MR Green Mode Fairchild Power Switch (FPS™) Features
... In conjunction with the IPK current limit pin (if used), the current-mode feedback path limits the current in the SenseFET when the maximum PWM duty cycle is attained. If the output consumes more than this maximum power, the output voltage (VO) decreases below its rating voltage. This reduces the cu ...
... In conjunction with the IPK current limit pin (if used), the current-mode feedback path limits the current in the SenseFET when the maximum PWM duty cycle is attained. If the output consumes more than this maximum power, the output voltage (VO) decreases below its rating voltage. This reduces the cu ...
Design of Arithmetic Circuits Using Resonant Tunneling Diodes and
... Figure 6: Ripple carry adder with 3j2 counters (left) and 2; 3j3 counters (right). has a logic depth of d = n + 1. To decrease the delay time T which is directly proportional to the logic depth d (under the assumption that the wiring delay can be neglected if the cells are locally interconnected) Co ...
... Figure 6: Ripple carry adder with 3j2 counters (left) and 2; 3j3 counters (right). has a logic depth of d = n + 1. To decrease the delay time T which is directly proportional to the logic depth d (under the assumption that the wiring delay can be neglected if the cells are locally interconnected) Co ...
ECE 1250 Lab 7 Measuring: Voltage Building: Op
... Given the voltages measured in Experiment 1, find resistor values, R1 and R2, that cause v1 to be as close to 0 V and 4.5 V as possible (to drive 74HCxx logic-gate inputs) when the comparator output is low and high. Note that only the ratio of R1 to R2 matters, although using values in the neighborh ...
... Given the voltages measured in Experiment 1, find resistor values, R1 and R2, that cause v1 to be as close to 0 V and 4.5 V as possible (to drive 74HCxx logic-gate inputs) when the comparator output is low and high. Note that only the ratio of R1 to R2 matters, although using values in the neighborh ...
Effective Drive Current in CMOS Inverters for Sub
... turning off, or off-current, which is the PMOS during a pull-down transition. The origin of this off-current is further elaborated in Fig. 6. Consider the waveform of Vin and Vout. We note that for smaller load capacitances, the slope of the voltages is sharper, resulting in greater overlap of volta ...
... turning off, or off-current, which is the PMOS during a pull-down transition. The origin of this off-current is further elaborated in Fig. 6. Consider the waveform of Vin and Vout. We note that for smaller load capacitances, the slope of the voltages is sharper, resulting in greater overlap of volta ...
74LCXR162245 Low Voltage 16-Bit Bidirectional Transceiver with 5V Tolerant Inputs/Outputs and 26
... controlled. Each byte has separate control inputs which could be shorted together for full 16-bit operation. The T/R inputs determine the direction of data flow through the device. The OE inputs disable both the A and B ports by placing them in a high impedance state. ...
... controlled. Each byte has separate control inputs which could be shorted together for full 16-bit operation. The T/R inputs determine the direction of data flow through the device. The OE inputs disable both the A and B ports by placing them in a high impedance state. ...
AW-120 DUAL MONO FTT BALANCED POWER AMPLIFIER
... preamplifiers balanced output left or right to the power amplifiers right input. Link from the power amplifiers right XLR output to the power amplifiers left XLR ...
... preamplifiers balanced output left or right to the power amplifiers right input. Link from the power amplifiers right XLR output to the power amplifiers left XLR ...
ELCODIS.COM - ELECTRONIC COMPONENTS DISTRIBUTOR
... number of R.P.M. is less than the set value. See hysteresis. Example 2 and 4 By interconnecting pins 8 and 11 the relay function is inverted, i.e. the relay releases when the number of R.P.M. exceeds the set value. The relay operates when the number of R.P.M. is less than ...
... number of R.P.M. is less than the set value. See hysteresis. Example 2 and 4 By interconnecting pins 8 and 11 the relay function is inverted, i.e. the relay releases when the number of R.P.M. exceeds the set value. The relay operates when the number of R.P.M. is less than ...
AN-1687 LM20125 Evaluation Board (Rev. A)
... The LM20125 is a full featured buck switching regulator capable of driving up to 5A of load current. The nominal 500 kHz switching frequency of the LM20125 reduces the size of the power stage components while still allowing for highly efficient operation. The LM20125 is capable of converting an inpu ...
... The LM20125 is a full featured buck switching regulator capable of driving up to 5A of load current. The nominal 500 kHz switching frequency of the LM20125 reduces the size of the power stage components while still allowing for highly efficient operation. The LM20125 is capable of converting an inpu ...
AppNote Triac Coupler
... The dV/dTcr parameter refers to the situation where the output dV/dT is so fast that it actually triggers the TRIAC eventhough the input trigger voltage is held at zero. Such situations can arise either because the voltage and frequency of the output waveform are extremely high, or more commonly bec ...
... The dV/dTcr parameter refers to the situation where the output dV/dT is so fast that it actually triggers the TRIAC eventhough the input trigger voltage is held at zero. Such situations can arise either because the voltage and frequency of the output waveform are extremely high, or more commonly bec ...
Bipolar Power Control Circuits Data Book 1996
... The possible defects with which a semiconductor device can be subjected are classified according to the probable influence of existing circuits: D Total (critical) defect When one of these defects occurs, the functional use of the device is impossible. Examples: Open contacts, inter-electrode short ...
... The possible defects with which a semiconductor device can be subjected are classified according to the probable influence of existing circuits: D Total (critical) defect When one of these defects occurs, the functional use of the device is impossible. Examples: Open contacts, inter-electrode short ...
Ohms Law Lab sheet
... 6. Calculate: Determining the total resistance of a parallel circuit when there is a variety of resistors is more complex. ...
... 6. Calculate: Determining the total resistance of a parallel circuit when there is a variety of resistors is more complex. ...
a Wideband/Differential Output Transimpedance Amplifier AD8015
... feedback resistor current noise, input bipolar transistor base current noise, and input voltage noise. ...
... feedback resistor current noise, input bipolar transistor base current noise, and input voltage noise. ...
Test Procedure for Phase-Frequency Discriminator
... 7) Test the phase detector by applying two 30 MHz, 10 dBm signals to RF IN (J2, on D1002471) and LO IN ( J4, on D1000184). Measure the output voltage on J6 as a function of the phase difference of the two input signals. The Tektronix AFG 3102 will generate both signals with an adjustable phase diffe ...
... 7) Test the phase detector by applying two 30 MHz, 10 dBm signals to RF IN (J2, on D1002471) and LO IN ( J4, on D1000184). Measure the output voltage on J6 as a function of the phase difference of the two input signals. The Tektronix AFG 3102 will generate both signals with an adjustable phase diffe ...
am26ls31c quadruple differential line driver - BG
... TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER ...
... TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.