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sdc-630/632/634* 10-, 12-, 14-bit synchro-to-digital or
sdc-630/632/634* 10-, 12-, 14-bit synchro-to-digital or

LT1031 - Precision 10 Volt Reference
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Efficient Power Conversion Corporation
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chapter 20: electric current, resistance, and ohm`s law
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... (a)  Digital  medical  thermometers  determine  temperature  by  measuring  the  resistance   of  a  semiconductor  device  called  a  thermistor  (which  has   α = −0.0600 / °C )  when  it  is   at  the  same  temperature  as  the  patient. ...
ELT2010 Student Manual
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... Integrated Circuits The brains of today’s electronics are integrated circuits. They are singular devices which are actually a collection of diodes, resistors, transistors and other devices built into a single component unit. Each integrated circuit (IC) is built to perform specific functions and ope ...
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... MAX612 in the circuit of Figure 6. The MAX612 must have an input voltage of at least 8V peak to maintain a regulated 5V output, but the peak transformer output voltage must not exceed 17V unless the current is limited as shown in Figures 3 and 4. The AC input line voltage can range from 80V RMS to 1 ...
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... flow of charges is called the CURRENT (I  q/t). The power supply supplies potential energy to each of the charges that flow through it. We can measure this energy per charge with a voltmeter where we define VOLTAGE as the electrical potential energy per charge (V  PE/q). Note in particular that ...
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... The circuit shown must represent the limits of simplicity for a metal detector. It uses a single 4093 quad Schmitt NAND IC and a search coil -- and of course a switch and batteries. A lead from IC1d pin 11 needs to be attached to a MW radio aerial, or should be wrapped around the radio. If the radio ...
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... Figure 6: Weakly indicating Threshold implementation of an AND gate Figure 7 depicts a strongly indicating circuit implementation. For the false-rail a T H34W 22-gate can be used. The both true-rails of the inputs of the circuit are connected to the inputs of the Threshold gate that have weight 1. T ...
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... difference. In Figure V-2, note that VR leads V(t) by a time difference δt= /ω. Experiment Part A In this part, you are to use a ~100 Hz sine wave as input and display the two signals V0(t) and VR(t) on the scope. Remember to set up the circuit such that you have either have the capacitor followed ...
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Week1-_Lesson2

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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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