
Tiny boost converter with adjustable input current limit
... application the frequency will be 3.5 MHz and is defined by the input to output voltage ratio and does not vary from moderate to heavy load currents. At light load the converter will automatically enter Power Save Mode and operates in PFM (Pulse Frequency Modulation) mode. During PWM operation the c ...
... application the frequency will be 3.5 MHz and is defined by the input to output voltage ratio and does not vary from moderate to heavy load currents. At light load the converter will automatically enter Power Save Mode and operates in PFM (Pulse Frequency Modulation) mode. During PWM operation the c ...
Micro-Power (50μA), Zerø-Drift, Rail-to-Rail Out
... The INA333 is a low-power, precision instrumentation amplifier offering excellent accuracy. The versatile 3-op amp design, small size, and low power make it ideal for a wide range of portable applications. A single external resistor sets any gain from 1 to 1000. The INA333 is designed to use an indu ...
... The INA333 is a low-power, precision instrumentation amplifier offering excellent accuracy. The versatile 3-op amp design, small size, and low power make it ideal for a wide range of portable applications. A single external resistor sets any gain from 1 to 1000. The INA333 is designed to use an indu ...
MAX6666/MAX6667 High-Accuracy PWM Output Temperature Sensors General Description
... Always use the same clock for t1 and t2 counters so that the temperature is strictly based on a ratio of the two times, thus eliminating errors due to different clocks’ frequencies. The MAX6666 (Figure 2a) has a push-pull output and provides rail-to-rail output drive. The ability to source and sink ...
... Always use the same clock for t1 and t2 counters so that the temperature is strictly based on a ratio of the two times, thus eliminating errors due to different clocks’ frequencies. The MAX6666 (Figure 2a) has a push-pull output and provides rail-to-rail output drive. The ability to source and sink ...
Ohm`s and Kirchhoff`s Laws
... Given these currents, the voltage across R1 using Ohm’s Law is: VR1 = 9.231V. Using the KVL equation from Mesh 1: VR4 = 0.7692V or 769.2mV. Given the current through R3 and R4, the voltages across those resistors, using Ohm’s Law, are: VR2 = 0.3077V or 307.7mV VR3 = 0.4615V or 461.5mV. As we had det ...
... Given these currents, the voltage across R1 using Ohm’s Law is: VR1 = 9.231V. Using the KVL equation from Mesh 1: VR4 = 0.7692V or 769.2mV. Given the current through R3 and R4, the voltages across those resistors, using Ohm’s Law, are: VR2 = 0.3077V or 307.7mV VR3 = 0.4615V or 461.5mV. As we had det ...
MasteringPhysics: Kirchhoff`s Rules and Applying Them
... Vb , and the resistors are labeled with their resistances. The ammeters are ideal meters that read I1 and I2 respectively. The direction of each loop and the direction of each current arrow that you draw on your own circuits are arbitrary. Just assign voltage drops consistently and sum both voltage ...
... Vb , and the resistors are labeled with their resistances. The ammeters are ideal meters that read I1 and I2 respectively. The direction of each loop and the direction of each current arrow that you draw on your own circuits are arbitrary. Just assign voltage drops consistently and sum both voltage ...
PL-2303 USB to RS-232 Bridge Controller Product
... large on-chip buffers accommodate data flow from two different buses. The USB bulk-type data is adopted for maximum data transfer. Automatic handshake is supported at the Serial port. With these, a much higher baud rate can be achieved compared to the legacy UART controller. This device is also comp ...
... large on-chip buffers accommodate data flow from two different buses. The USB bulk-type data is adopted for maximum data transfer. Automatic handshake is supported at the Serial port. With these, a much higher baud rate can be achieved compared to the legacy UART controller. This device is also comp ...
Set No: 1
... 3. a) What are the errors in induction type wattmeter, and how are they compensated? b) The inductive reactance of the pressure coil circuit of a dynamometer wattmeter is 0.35 percent of its resistance at normal frequency and the capacitance is negligible. Calculate the correction factor and percent ...
... 3. a) What are the errors in induction type wattmeter, and how are they compensated? b) The inductive reactance of the pressure coil circuit of a dynamometer wattmeter is 0.35 percent of its resistance at normal frequency and the capacitance is negligible. Calculate the correction factor and percent ...
current - Uplift Hampton
... the electrons can run between them fairly rapidly. As the conductor heats up, the ions start vibrating. As their motion becomes more erratic they are more likely to get in the way and disrupt the flow of the electrons. As a result, the higher the temperature, the higher the resistance. At extremely ...
... the electrons can run between them fairly rapidly. As the conductor heats up, the ions start vibrating. As their motion becomes more erratic they are more likely to get in the way and disrupt the flow of the electrons. As a result, the higher the temperature, the higher the resistance. At extremely ...
TLC372-EP 数据资料 dataSheet 下载
... electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits. ...
... electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits. ...
How to Design an LED Driver Using the TPS92510 Application Report
... Input Capacitor The TPS92510 requires a high-quality ceramic, type X5R or X7R, input decoupling capacitor of at least 2µF effective capacitance. Ceramic capacitance tends to decrease as the applied dc voltage increases. This depreciation must be accounted for to ensure that the minimum input capacit ...
... Input Capacitor The TPS92510 requires a high-quality ceramic, type X5R or X7R, input decoupling capacitor of at least 2µF effective capacitance. Ceramic capacitance tends to decrease as the applied dc voltage increases. This depreciation must be accounted for to ensure that the minimum input capacit ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.