
PE4460 - Peregrine Semiconductor
... switch matrix with integrated power splitters for nonblocking operation. Any of the four RF inputs can be connected to one or more of the six RF outputs simultaneously. With its excellent isolation, small package, and simple interface, the PE4460 is ideal for receiver switching in Cellular/GSM base ...
... switch matrix with integrated power splitters for nonblocking operation. Any of the four RF inputs can be connected to one or more of the six RF outputs simultaneously. With its excellent isolation, small package, and simple interface, the PE4460 is ideal for receiver switching in Cellular/GSM base ...
AC/Synchro/Resolver/Phase Definitions
... quadrature at the same points where fundamental null is measured. Zro: The impedance of the rotor at rated frequency with the stator opened circuited. Zrs: The impedance of the rotor with all stator windings short circuited at rated frequency and with a voltage applied to produce the same input curr ...
... quadrature at the same points where fundamental null is measured. Zro: The impedance of the rotor at rated frequency with the stator opened circuited. Zrs: The impedance of the rotor with all stator windings short circuited at rated frequency and with a voltage applied to produce the same input curr ...
AD5441: 英文产品数据手册下载
... ladder network consisting of silicon-chrome, highly stable (50 ppm/°C), thin-film resistors, and 12 pairs of NMOS currentsteering switches, see Figure 19. These switches steer binarily weighted currents into either IOUT or GND; this yields a constant current in each ladder leg, regardless of digital ...
... ladder network consisting of silicon-chrome, highly stable (50 ppm/°C), thin-film resistors, and 12 pairs of NMOS currentsteering switches, see Figure 19. These switches steer binarily weighted currents into either IOUT or GND; this yields a constant current in each ladder leg, regardless of digital ...
UK1122 - L298 H-Bridge Dual Bidirectional Motor Driver
... This dual bidirectional motor driver is based on the very popular L298 Dual H-Bridge Motor Driver Integrated Circuit. The circuit will allow you to easily and independently control two motors of up to 2A each in both directions. It is ideal for robotic applications and well suited for connection to ...
... This dual bidirectional motor driver is based on the very popular L298 Dual H-Bridge Motor Driver Integrated Circuit. The circuit will allow you to easily and independently control two motors of up to 2A each in both directions. It is ideal for robotic applications and well suited for connection to ...
- Saraswathi Velu College of Engineering
... 13. Justify the reasons for using current sources in integrated circuits. 14. What is the advantage of widlar current source over constant current source? 15. Mention the advantages of Wilson current source. 16. Define sensitivity. 17. What are the limitations in a temperature compensated zener-refe ...
... 13. Justify the reasons for using current sources in integrated circuits. 14. What is the advantage of widlar current source over constant current source? 15. Mention the advantages of Wilson current source. 16. Define sensitivity. 17. What are the limitations in a temperature compensated zener-refe ...
MAX34406 Quad Current-Sense Amplifier with Overcurrent Threshold Comparators General Description
... an external capacitor to CDLY. Once SHTDN is latched high impedance, it remains so until ENA is toggled. The unidirectional current-sense amplifiers used in each channel of the device have a well established history. For each channel, an op amp is used to force the current through an internal gain r ...
... an external capacitor to CDLY. Once SHTDN is latched high impedance, it remains so until ENA is toggled. The unidirectional current-sense amplifiers used in each channel of the device have a well established history. For each channel, an op amp is used to force the current through an internal gain r ...
Lab 3.8 Impedance of test instruments (p79)
... 2) Do the same for channel-1 of your oscilloscope in DC coupling mode with input scaling of 1 volt per division and a 100 Hz input signal from your signal generator. 3) How does the oscilloscope input impedance change when you increase the input signal frequency to 10 kHz? Your scope input can be mo ...
... 2) Do the same for channel-1 of your oscilloscope in DC coupling mode with input scaling of 1 volt per division and a 100 Hz input signal from your signal generator. 3) How does the oscilloscope input impedance change when you increase the input signal frequency to 10 kHz? Your scope input can be mo ...
OTP ROM
... memory designs. The perfect memory or an ideal memory, is easy and fast program, can be read fast and is cost effective. Some memory structures can succeed in one or more of these necessities very well. Although an ideal memory is still a dream, there are some unique memory structures that are reall ...
... memory designs. The perfect memory or an ideal memory, is easy and fast program, can be read fast and is cost effective. Some memory structures can succeed in one or more of these necessities very well. Although an ideal memory is still a dream, there are some unique memory structures that are reall ...
AN1316 Frequency Output Conversion for MPX2000 Series
... Although the specifications in the data sheets apply only to a 10 V supply voltage, the output of these devices is ratiometric with the supply voltage. At the absolute maximum supply voltage specified, 16 V, the sensor will produce a differential output voltage of 64 mV at the rated full-scale press ...
... Although the specifications in the data sheets apply only to a 10 V supply voltage, the output of these devices is ratiometric with the supply voltage. At the absolute maximum supply voltage specified, 16 V, the sensor will produce a differential output voltage of 64 mV at the rated full-scale press ...
Lab 2 - Northwestern University
... A = Area of the coil n = number of turns of the coil An ideal d'Arsonval meter would have no resistance, however real meters have a resistance Rm which is due to the coil. A more accurate representation of the meter then consists of an ideal meter with a series resistance Rm. In many cases, a d'Ars ...
... A = Area of the coil n = number of turns of the coil An ideal d'Arsonval meter would have no resistance, however real meters have a resistance Rm which is due to the coil. A more accurate representation of the meter then consists of an ideal meter with a series resistance Rm. In many cases, a d'Ars ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.