• Study Resource
  • Explore
    • Arts & Humanities
    • Business
    • Engineering & Technology
    • Foreign Language
    • History
    • Math
    • Science
    • Social Science

    Top subcategories

    • Advanced Math
    • Algebra
    • Basic Math
    • Calculus
    • Geometry
    • Linear Algebra
    • Pre-Algebra
    • Pre-Calculus
    • Statistics And Probability
    • Trigonometry
    • other →

    Top subcategories

    • Astronomy
    • Astrophysics
    • Biology
    • Chemistry
    • Earth Science
    • Environmental Science
    • Health Science
    • Physics
    • other →

    Top subcategories

    • Anthropology
    • Law
    • Political Science
    • Psychology
    • Sociology
    • other →

    Top subcategories

    • Accounting
    • Economics
    • Finance
    • Management
    • other →

    Top subcategories

    • Aerospace Engineering
    • Bioengineering
    • Chemical Engineering
    • Civil Engineering
    • Computer Science
    • Electrical Engineering
    • Industrial Engineering
    • Mechanical Engineering
    • Web Design
    • other →

    Top subcategories

    • Architecture
    • Communications
    • English
    • Gender Studies
    • Music
    • Performing Arts
    • Philosophy
    • Religious Studies
    • Writing
    • other →

    Top subcategories

    • Ancient History
    • European History
    • US History
    • World History
    • other →

    Top subcategories

    • Croatian
    • Czech
    • Finnish
    • Greek
    • Hindi
    • Japanese
    • Korean
    • Persian
    • Swedish
    • Turkish
    • other →
 
Profile Documents Logout
Upload
Konstantin Stefanov`s talk at LCUK in Durham
Konstantin Stefanov`s talk at LCUK in Durham

Z-source inverter for adjustable speed drives (a novel asd system
Z-source inverter for adjustable speed drives (a novel asd system

... any value that is above the average dc value of the rectifier, a desired output voltage is always obtainable regardless the line voltage. Using the 230 V ASD system as an example, the dc capacitor voltage is boosted to 350 V in order to produce 230–V ac output as shown in Fig. 2. Theoretically, the ...
Mini8 ® Controller
Mini8 ® Controller

... controller can, for up to 8 loops, detect Partial Load failure, Over Current, as well as SSR short or open circuit. Individual load current parameters indicate the measurement for each heater. The current monitor block utilises a cyclic algorithm to measure the current flowing through one heater per ...
HA028480 Iss 10
HA028480 Iss 10

... controller can, for up to 8 loops, detect Partial Load failure, Over Current, as well as SSR short or open circuit. Individual load current parameters indicate the measurement for each heater. The current monitor block utilises a cyclic algorithm to measure the current flowing through one heater per ...
Datasheet - STMicroelectronics
Datasheet - STMicroelectronics

... frequency analog-to-digital converter that uses pure (ELDRS-free) CMOS 0.25 µm technology combining high performance, radiation robustness, and very low power consumption. The device is based on a pipeline structure and digital error correction to provide excellent static linearity. Specifically des ...
IL 300 E
IL 300 E

... that accept bipolar signals referenced to ground. These amplifiers circuit configurations are shown in Figure 22. In order for the amplifier to respond to a signal that swings above and below ground, the LED must be prebiased from a separate source by using a voltage reference source (Vref1). In the ...
MAX3188/MAX3189 1Mbps, 1µA RS-232 Transmitters in SOT23-6 General Description Features
MAX3188/MAX3189 1Mbps, 1µA RS-232 Transmitters in SOT23-6 General Description Features

... to 1Mbps with the MAX3189. The MAX3188/MAX3189 transmitters are inverting level translators that convert CMOS-logic levels to 5V EIA/TIA-232 levels. They feature a shutdown input that reduces current consumption to only 1µA and forces the transmitter output into a high-impedance state. The MAX3188/M ...
BD239/ A/B/ C NPN Epitaxial Silicon Transistor
BD239/ A/B/ C NPN Epitaxial Silicon Transistor

... result in significant injury to the user. ...
8 0.5A B A 2 1 4 2V
8 0.5A B A 2 1 4 2V

Pulse Width Mod A/D Conversion Techniques w
Pulse Width Mod A/D Conversion Techniques w

S-L2985 SERIES VOLTAGE REGULATOR
S-L2985 SERIES VOLTAGE REGULATOR

Safe isolation procedures
Safe isolation procedures

EXPERIMENT 4 THEVENIN AND NORTON EQUIVALENT CIRCUITS
EXPERIMENT 4 THEVENIN AND NORTON EQUIVALENT CIRCUITS

... network and determining the equivalent resistance is equal to the Thevenin resistance (RTH). The strength of the Thevenin theorem lies in the fact that, although the Thevenin equivalent circuit is not the original circuit, it acts like the original circuit in terms of the voltage and current at the ...
Introduction to circuit analysis Classification of Materials Electric
Introduction to circuit analysis Classification of Materials Electric

... ÆElectrical sources can either deliver or absorb power How can a circuit element absorb power? By converting electrical energy into heat (resistors in toasters), light (light bulbs), or acoustic energy (speakers); by storing energy (charging a battery). ...
NCP5080 Xenon Photoflash Capacitor Charge with Photo Sense
NCP5080 Xenon Photoflash Capacitor Charge with Photo Sense

Abstract—This paper presents a Z-source inverter
Abstract—This paper presents a Z-source inverter

... which is the maximum voltage obtainable from 230 V line using the linear PWM. The diode rectifier functions such as the traditional one producing about 310Vacross the dc capacitors (C1 and C2 ). When a higher output voltage is required or when the line voltage sags, the shoot-through zero states are ...
- About - University of Toronto
- About - University of Toronto

... Capacitor-based charge recycling (CCR) has been used for power reduction in various digital circuits and energy harvesting systems [45]–[47]. CCR uses the superior energy density of capacitors and does not rely on additional inductors. CCR is therefore more cost-effective then RGD. In one CCR scheme ...
SET-A GOVT. I.T.I. BHUBANESWAR ELECTRICIAN 1. The body
SET-A GOVT. I.T.I. BHUBANESWAR ELECTRICIAN 1. The body

... d. screw driver 41. The link between electricity and magnetism as discovered in 1824 by a. Faraday c. Henry b. Lenz d. Oersted 42. A consuming unit has a load of 1000kW & the reactive power 1000kVAR. It has the power factor ...
LM2937 2.5-V and 3.3-V 400-mA and 500
LM2937 2.5-V and 3.3-V 400-mA and 500

Capacitors in DC Circuits
Capacitors in DC Circuits

FMS6404 Precision Composite Video Output with Sound Trap and Group Delay Compensation
FMS6404 Precision Composite Video Output with Sound Trap and Group Delay Compensation

... Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditi ...
A new 650V Super Junction Device with rugged body diode... and soft switching applications
A new 650V Super Junction Device with rugged body diode... and soft switching applications

... during reverse recovery and eliminating the problem of latch-up of the parasitic npn-bipolar transistor [2]. A significant reduction of the reverse recovery charge can be achieved by an enhanced recombination rate of the injected carriers resulting in lower reverse recovery peak currents during turn ...
4-Sensor Glossary of Technical Definitions and Terminology
4-Sensor Glossary of Technical Definitions and Terminology

BD6722FS
BD6722FS

... stress. Always discharge capacitors after each process or step. Always turn the IC’s power supply off before connecting it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an antistatic measure. Use similar precaution when transporting or ...
Analysis of Low Pass Filter and Voltage Dividers
Analysis of Low Pass Filter and Voltage Dividers

... design  parameters  as  SPICE,  but  for  completeness,  simulations  were  run  in  both.  It  was  not  too  time   consuming  to  do  both,  as  the  programs  are  generally  easy  to  work  with.     The  transient  analysis  w ...
< 1 ... 289 290 291 292 293 294 295 296 297 ... 640 >

CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
  • studyres.com © 2025
  • DMCA
  • Privacy
  • Terms
  • Report