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Avalanche Photodiode Bias Controller and ADL5317
Avalanche Photodiode Bias Controller and ADL5317

... The GARD pins primarily shield the VAPD trace from leakage currents and filter noise from the bias control interface. GARD is driven by the VSET amplifier through a 20 kΩ resistor. This resistor forms an RC network with an external capacitor from GARD to ground that filters the thermal noise of the ...
Improved sense-amplifier-based flip-flop
Improved sense-amplifier-based flip-flop

... Deeply pipelined systems exhibit inherent parallelism that requires higher fan-outs at the register outputs. This impacts the requirements for higher flip-flop driving strengths. Recently reported flip-flops achieve small delay between the latest point of data arrival and output transition. Typical ...
Chapter 8
Chapter 8

Design of MMIC Serial to Parallel Converter in Gallium Arsenide
Design of MMIC Serial to Parallel Converter in Gallium Arsenide

... One of the aims among circuit manufactures today is to put as many electronic functions as possible on an individual chip. Thanks to advances in the fabrication processes it is now possible to integrate complete systems on a single chip, called system-on-chip (soc). Soc applications include both ana ...
Review of power in AC circuit (Pdf file)
Review of power in AC circuit (Pdf file)

... Both P and Q have the same dimension. However, in order to distinguish between the real and the reactive power, the term “var” is used for the reactive power (var is an acronym for the phrase “volt-ampere reactive”). For an inductive load, current is lagging the voltage,  = (v i ) > 0 and Q is po ...
LM1085 - Texas Instruments
LM1085 - Texas Instruments

AD534 数据手册DataSheet 下载1
AD534 数据手册DataSheet 下载1

... AD534 A much lower scaling voltage can be achieved without any reduction of input signal range using a feedback attenuator as shown in Figure 4. In this example, the scale is such that VOUT = XY, so that the circuit can exhibit a maximum gain of 10. This connection results in a reduction of bandwid ...
Problems - Physics and Engineering Physics
Problems - Physics and Engineering Physics

... What is the current through the 2W resistor due to the current source (give direction)? What is the current through the 2W resistor due to the voltage source (give direction)? What is the power dissipated by the 2W resistor? What is the voltage Vab? How much energy is dissipated by 1C of charge as i ...
MAX8529 1.5MHz Dual 180° Out-of-Phase PWM Step-Down Controller with POR General Description
MAX8529 1.5MHz Dual 180° Out-of-Phase PWM Step-Down Controller with POR General Description

... generates two outputs from input supplies ranging from 4.75V to 23V. Each output is adjustable from sub-1V to 18V. Input voltage ripple and total RMS input ripple current are reduced by synchronized 180-degree out-ofphase operation. The switching frequency is adjustable from 600kHz to 1.5MHz with an ...


... Figure 2: Circuit implementation of 1-Bit ALU The MOS device used for designing the 1–Bit ALU are selected in such a manner that the power consumption of the whole circuit is less. Here low-leakage MOS devices are selected. Leakage current is the current that flows between the drain and source when ...
Sensor specifications - CMA
Sensor specifications - CMA

... The sensor contains a sensing element and a signal-conditioning amplifier. The sensing element is a 0.4  resistor (0.3 W) connected between the red and black terminals. As the current passes through the resistor, a small potential difference can be measured across this resistor. This potential diff ...
Output Circuits Word Document
Output Circuits Word Document

... driver will be required to provide this additional current for these higher powered output devices. Now that we have looked at how to create sensing circuits and the range of output devices available we have all the necessary tools to look at a range of different driver circuits. This will be covere ...
victor 6016a - AD INSTRUMENTS
victor 6016a - AD INSTRUMENTS

... (1) Set the range selector knob to DCV Range position. Insert the red lead into “V.Ω” input terminal and the black lead into “COM” input terminal. (2) Connect the test leads crossly with the tested circuit, the voltage value connected by the red lead and the polarity will be displayed on LCD simulta ...
Digital Current Mode Control for Buck
Digital Current Mode Control for Buck

CW-High Surge - Wirewound Resistors, High Surge
CW-High Surge - Wirewound Resistors, High Surge

Current Sensor (0222i) - CMA
Current Sensor (0222i) - CMA

MPP_Orbit_07052008
MPP_Orbit_07052008

... On 11/03/2008, RCBCV10.L6B1 circuit was successfully qualified by ELQA team. On 14/04/2008, AB/PO can not power this circuit, they have a fault on the PC. On 16/04/2008, EE811 (cold voltage tap) is found open, directly from the feed through pin coming from the cover flange => NC 908215 opened. ...
Terminations
Terminations

... A 50- termination may exceed the driver’s current capacity To accommodate CMOS and TTL, can increase Zo and R so that the current required is within the driver’s ability Also, can reduce power dissipation in termination resistor with AC coupling ...
MC145151-2 and MC145152-2
MC145151-2 and MC145152-2

XB1117 Series
XB1117 Series

... The XB1117 series is 1A Bi-polar transistor LDO voltage regulator. Output voltage of the XB1117P series is fixed to 1.8V, 2.5V, 3.3V, and 5.0V. The XB1117K series output voltage is adjustable by the external resistors. Please refer to the absolute maximum ratings for the difference between the rated ...
Triple Differential Receiver with Adjustable Line Equalization AD8123
Triple Differential Receiver with Adjustable Line Equalization AD8123

... stages are summed together to best approximate the inverse frequency response of the cable. Logic circuitry inside the AD8123 controls the gain functions of the individual stages so that the lowest noise can be achieved at short-to-medium cable lengths. This technique optimizes its performance for l ...
Document
Document

Metal-Clad Switchgear or Metal-Enclosed
Metal-Clad Switchgear or Metal-Enclosed

... they are not required by the standard. Under the ANSI standards, low voltage switchgear cannot be considered metal-clad. Metal-clad switchgear requires that the main switching and interrupting device be drawout. It may be either a circuit breaker (usual) or a load-break interrupter switch (unusual). ...
No Slide Title
No Slide Title

Designing With TI Ultra-Low-Voltage CMOS (AUC) Octals and
Designing With TI Ultra-Low-Voltage CMOS (AUC) Octals and

... The Advanced Ultra-low-voltage CMOS (AUC) devices from Texas Instruments (TI) are the industry’s first logic family that is optimized at 1.8-V VCC, but is operational from 0.8 V to 2.7 V, with a tolerance of 3.6 V. This sub-1-V family operates at low power and high speed, while maintaining overall s ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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