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ELECTROMAGNETIC TOPOLOGY
ELECTROMAGNETIC TOPOLOGY

v. amplifier design
v. amplifier design

THE L6569: A NEW HIGH VOLTAGE IC DRIVER FOR
THE L6569: A NEW HIGH VOLTAGE IC DRIVER FOR

... is totally off, so that the voltage at the capacitors center node is not unbalanced by the leakage path during power on. CONSIDERATIONS ON THE L6569 ENVIRONMENT To illustrate the benefits of the L6569 in the CFL applications, a demonstration board was developed to supply Sylvania 18W DULUX lamp (ref ...
Konstantin Stefanov`s talk on LCFI at LCWS 2006
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ULTRA SLIMPAK G108-0001 ® DC Powered DC Input Limit Alarm
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... input signal status. Active DC power is indicated by an illuminated LED. If this LED is off, check DC power and the wiring connection. If the input signal is more than 110% of the full scale range, the LED will flash at 8 Hz. Below 0%, it flashes at 4 Hz. Two red LEDs indicate the relay state for ea ...
(a) Results based on the measurements on the circuit in Figure 3(a)
(a) Results based on the measurements on the circuit in Figure 3(a)

... measuring the open-circuit voltage between terminals X and Y when the resistor RL is removed. RTH is called the Thevenin equivalent resistance and ZTH is called the Thevenin equivalent impedance. By measuring the short-circuit current ISC flowing through a wire that connects X to Y, the value of RTH ...
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HIN202, HIN206, HIN207, HIN208, HIN211, HIN213 Datasheet

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... threshold. They act as fuses which are normally CLOSED and they open when the temperature exceeds the preset threshold. Should this trip the supply, the threshold temperature can be increased slightly, but it should not be increased by more than 5 degrees without first consulting with someone famili ...
ADCLK954 数据手册DataSheet 下载
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... output stage is shown in Figure 13. The outputs are designed for best transmission line matching. If high speed signals must be routed more than a centimeter, either the microstrip or the stripline technique is required to ensure proper transition times and to prevent excessive output ringing and pu ...
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... The potentiometer (pot) is a device that can provide a variable resistance. It can be used, for example, as the volume control knob of an amplifier. Turn the knob of the potentiometer as far as it will go in the counterclockwise (ccw) direction. Using the ohmmeter, find the range of resistance value ...
Examples of Solved Problems for Chapter 3, 5, 6, 7
Examples of Solved Problems for Chapter 3, 5, 6, 7

... of the book Fundamentals of Digital Logic with VHDL Design. Since not all of these examples are relevant to ECE241, the numbering of examples, and some figure numbers, are not always sequential in this document. Example 3.9 Problem: We introduced standard cell technology in section 3.7. In this techn ...
PSPICE Basics - California State University, Northridge
PSPICE Basics - California State University, Northridge

... steady state analysis, etc. You will be introduced to each of these as the semester progresses. The Orcad PSPICE software allows the user to input their circuits using a schematic capture program (called "Capture" or “Capture CIS”). The software creates a SPICE input file from this diagram and perfo ...
AMS2954 数据手册DataSheet 下载
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... protection up to 60V and can survive unregulated input transient up to 20V below ground. The AMS2954 was designed to include a tight initial tolerance (typ. 0.5%), excellent load and line regulation (typ. 0.05%), and a very low output voltage temperature coefficient, making these devices useful as a ...
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... Today 3/28 Circuits Current Potential (same as always) Capacitance (energy and in circuits) ...
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... 5. VOPT is grounded in most cases when FETs are driven. To improve the intermodulation performance and the 1 dB compression point of GaAs control devices at low frequencies, VOPT can be increased to between 1.0 and 2.0V. The nonlinear characteristics of the GaAs control devices will approximate perf ...
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J.A. Santiago-Gonzalez, K.K. Afridi and D.J. Perreault, Design of Resistive-Input Class E Resonant Rectifiers for Variable-Power Operation, 14th IEEE Workshop on Control and Modeling for Power Electronics (COMPEL ’13), June 2013.
J.A. Santiago-Gonzalez, K.K. Afridi and D.J. Perreault, Design of Resistive-Input Class E Resonant Rectifiers for Variable-Power Operation, 14th IEEE Workshop on Control and Modeling for Power Electronics (COMPEL ’13), June 2013.

... resonant rectifier operating at a frequency of 30 MHz with output voltage of 12 V dc and output power ranging from 18 W down to 1.8 W (i.e., a 10:1 power range ratio). We would like the input impedance of the rectifier to be as resistive as possible (i.e., minimize the worst-case phase angle of the ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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