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ppt - CMOS VLSI Design
ppt - CMOS VLSI Design

VNI8200XP
VNI8200XP

... channel featuring in 16 bits format a parity check control for communication robustness. It also allows monitoring the status of the IC signaling Power Good, loss of ground, overtemperature condition for each channel, IC pre-warning temperature detection. Built-in thermal shutdown protects the chip ...
DC Current Source AC and DC Current Source
DC Current Source AC and DC Current Source

Ultra-low Current Measurements with Silicon-on
Ultra-low Current Measurements with Silicon-on

Lecture 17 - Harvey Mudd College
Lecture 17 - Harvey Mudd College

...  For large shift registers, keep data in SRAM instead  Move read/write pointers to RAM rather than data – Initialize read address to first entry, write to last – Increment address on each cycle Din ...
IX3416271631
IX3416271631

Feasibility study of a latchup-based particle detector
Feasibility study of a latchup-based particle detector

... - high e+e- pair density along its track; - bias across the oxide => transient current across the oxide; - this mechanism can be helped by the electric field induced in SiO2 by charges created in Si by the single ionizing particle. Result: oxide breakdown Examples: - Single Event Upset (SEU); - Sing ...
Lecture 13: SRAM - Harvey Mudd College
Lecture 13: SRAM - Harvey Mudd College

Simultaneous-Switching Noise Analysis For Texas Instruments FIFO
Simultaneous-Switching Noise Analysis For Texas Instruments FIFO

Physics for Scientists & Review ( )
Physics for Scientists & Review ( )

... ! A transformer that takes voltages from lower to higher is called a stepup transformer and a transformer that takes voltages from higher to lower is called a step-down transformer ! A transformer consists of two sets of coils wrapped around an iron ...
Power Factor Correction Circuits: Active Filters
Power Factor Correction Circuits: Active Filters

... line voltages, the converter (in thePFC circuit) must be designed so that the output voltage,VOUT is greater than the peak of the input line voltage*.Assuming a maximum line voltage of 240Vrms andallowing for at least a 10% margin results in a nominalVOUT in the vicinity of 380 Vdc. VOUT is regulate ...
Combined Series and Parallel Circuits
Combined Series and Parallel Circuits

... TOPS Physics Measuring combined voltage across R4 and R5: 10. Touch the red meter lead to R4 at 35j and the black multimeter lead to R5 at 55j. Record your voltage measurement here: V Measuring Voltage across R6: 11. Touch the red meter lead to R6 at 45f and the black multimeter lead to R6 at 55f. ...
(a) Results based on the measurements on the circuit in Figure 3(a)
(a) Results based on the measurements on the circuit in Figure 3(a)

... measuring the open-circuit voltage between terminals X and Y when the resistor RL is removed. RTH is called the Thevenin equivalent resistance and ZTH is called the Thevenin equivalent impedance. By measuring the short-circuit current ISC flowing through a wire that connects X to Y, the value of RTH ...
Metal-layer capacitors in the 65nm CMOS process and the
Metal-layer capacitors in the 65nm CMOS process and the

... MOS capacitor, metal–insulator–metal (MIM) capacitor, and metal–oxide–metal (MOM) capacitor. Among those capacitors, because of thin gate oxide structure, MOS capacitor has the highest capacitance density per unit area. However, due to the disadvantages of non-linearity, higher temperature coefficien ...
ECT1012 Circuit Theory and Field Theory
ECT1012 Circuit Theory and Field Theory

ECT1012 Circuit Theory and Field Theory
ECT1012 Circuit Theory and Field Theory

A Low-Power Wide-Linear-Range Transconductance Amplifier
A Low-Power Wide-Linear-Range Transconductance Amplifier

... small for certain applications—for example, for filters in electronic cochleas, where it is desirable to handle loud sounds without distortion and to have a large dynamic range. We describe a transconductance amplifier designed for low-power (< 1µW) subthreshold operation with a wide input linear ra ...
High Performance AUDIO OPERATIONAL AMPLIFIERS FEATURES DESCRIPTION
High Performance AUDIO OPERATIONAL AMPLIFIERS FEATURES DESCRIPTION

... provide superior sound quality and speed for exceptional audio performance. This in combination with high output drive capability and excellent dc performance allows use in a wide variety of demanding applications. In addition, the OPA134’s wide output swing, to within 1V of the rails, allows increa ...
Using a multimeter to take measurements - SBSZ Jena
Using a multimeter to take measurements - SBSZ Jena

... Thermal resistors or thermistors are temperature-dependent resistors. They are made of semiconductor materials that are highly sensitive to changes in temperature. This property of thermistors has many important applications such as the measurement and control of temperature, for example in fire ala ...
LM555 - Texas Instruments
LM555 - Texas Instruments

MIT 6.375 Lecture 01
MIT 6.375 Lecture 01

Transient Overvoltages on Ungrounded Systems
Transient Overvoltages on Ungrounded Systems

Types SD 110, SD 210, SD 270 Namur Amplifier Relays
Types SD 110, SD 210, SD 270 Namur Amplifier Relays

Power Source Testing
Power Source Testing

... 5. Put the container in the ice chest with the dry ice and leave it for a half hour or so. 6. Remove the container and retrieve and save the recorded data from the HOBO. 7. Repeat the test process for other types of batteries. 8. Transfer HOBO data into Excel and plot graphs. ...
Serial-to-Parallel Interface (Rev. A)
Serial-to-Parallel Interface (Rev. A)

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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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