
Designing With TI Ultra-Low-Voltage CMOS (AUC) Octals and
... The Advanced Ultra-low-voltage CMOS (AUC) devices from Texas Instruments (TI) are the industry’s first logic family that is optimized at 1.8-V VCC, but is operational from 0.8 V to 2.7 V, with a tolerance of 3.6 V. This sub-1-V family operates at low power and high speed, while maintaining overall s ...
... The Advanced Ultra-low-voltage CMOS (AUC) devices from Texas Instruments (TI) are the industry’s first logic family that is optimized at 1.8-V VCC, but is operational from 0.8 V to 2.7 V, with a tolerance of 3.6 V. This sub-1-V family operates at low power and high speed, while maintaining overall s ...
3 pages Sample 2
... Thermistors and voltage dividing Voltage dividing circuits allow us to manipulate the size of a voltage in response to a given input. The principles of voltage dividing will be very important later in this chapter when we examine amplifier circuits and in the next chapter when we look at electrical- ...
... Thermistors and voltage dividing Voltage dividing circuits allow us to manipulate the size of a voltage in response to a given input. The principles of voltage dividing will be very important later in this chapter when we examine amplifier circuits and in the next chapter when we look at electrical- ...
MAX3316–MAX3319 2.5V, 1µA, 460kbps, RS-232-Compatible Transceivers General Description
... using Maxim’s revolutionary AutoShutdown Plus™ feature. These devices automatically enter a low-power shutdown mode when the RS-232 cable is disconnected or the transmitters of the connected peripherals are inactive for more than 30 seconds. They turn on again when they sense a valid transition at a ...
... using Maxim’s revolutionary AutoShutdown Plus™ feature. These devices automatically enter a low-power shutdown mode when the RS-232 cable is disconnected or the transmitters of the connected peripherals are inactive for more than 30 seconds. They turn on again when they sense a valid transition at a ...
Power MOSFET with integrated poly-silicon diode to monitor junction temperature, with simplified external electrical shutdown circuit to prevent thermal runaway
... electrical system. For this case, the paper suggests a design example of how achieve a device shutdown event if the junction temperature reaches its maximum guaranteed value. Finally, an evaluation of the error in the junction temperature reading under different thermal conditions is performed to co ...
... electrical system. For this case, the paper suggests a design example of how achieve a device shutdown event if the junction temperature reaches its maximum guaranteed value. Finally, an evaluation of the error in the junction temperature reading under different thermal conditions is performed to co ...
ics843011.pdf
... Total Power_MAX (3.465V, with all outputs switching) = 322.2mW + 30mW = 352.2mW 2. Junction Temperature. Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad and directly affects the reliability of the device. The maximum recommended junction temperature for HiP ...
... Total Power_MAX (3.465V, with all outputs switching) = 322.2mW + 30mW = 352.2mW 2. Junction Temperature. Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad and directly affects the reliability of the device. The maximum recommended junction temperature for HiP ...
1 Bakiss Hiyana binti Abu Bakar JKE, POLISAS
... Note that the waveform for power is always positive, never negative for this resistive circuit. This means that power is always being dissipated by the resistive load, and never returned to the source as it is with reactive loads. ...
... Note that the waveform for power is always positive, never negative for this resistive circuit. This means that power is always being dissipated by the resistive load, and never returned to the source as it is with reactive loads. ...
V o - s3.amazonaws.com
... – If the circuits contains only independent sources, they are made zero by replacing voltage sources with short circuits and current sources with open circuits. RTH is then found by computing the resistance of the purely resistive network at the open terminals. – If the circuit contains only depende ...
... – If the circuits contains only independent sources, they are made zero by replacing voltage sources with short circuits and current sources with open circuits. RTH is then found by computing the resistance of the purely resistive network at the open terminals. – If the circuit contains only depende ...
Stresa, Italy, 25-27 April 2007 STEP-UP CONVERTER FOR ELECTROMAGNETIC VIBRATIONAL ENERGY SCAVENGER.
... load resistance where the VM circuit is supplied by the vibration generators. The vibration generators are excited at their resonance frequency with the acceleration levels given in table I. The coil resistance and the resistance of the VM circuit according to equation (8) for macro generator are 46 ...
... load resistance where the VM circuit is supplied by the vibration generators. The vibration generators are excited at their resonance frequency with the acceleration levels given in table I. The coil resistance and the resistance of the VM circuit according to equation (8) for macro generator are 46 ...
TPS63030 数据资料 dataSheet 下载
... The controller circuit also senses the average input current as well as the peak input current. With this, maximum input power can be controlled as well as the maximum peak current to achieve a safe and stable operation under all possible conditions. To finally protect the device from overheating, a ...
... The controller circuit also senses the average input current as well as the peak input current. With this, maximum input power can be controlled as well as the maximum peak current to achieve a safe and stable operation under all possible conditions. To finally protect the device from overheating, a ...
FPF2172 IntelliMAX™ Advanced Load Management Products FPF2172 IntelliM
... capacitor or a short-circuit, a capacitor needs to be placed between VIN and GND. A 4.7µF ceramic capacitor, CIN, must be placed close to the VIN pin. A higher value of CIN can be used to further reduce the voltage drop experienced as the switch is turned on into a large capacitive load. ...
... capacitor or a short-circuit, a capacitor needs to be placed between VIN and GND. A 4.7µF ceramic capacitor, CIN, must be placed close to the VIN pin. A higher value of CIN can be used to further reduce the voltage drop experienced as the switch is turned on into a large capacitive load. ...
AN-694 APPLICATION NOTE Hot Swap and Blocking FET Control Using 2
... One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • Tel: 781/329-4700 • Fax: 781/326-8703 • www.analog.com ...
... One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • Tel: 781/329-4700 • Fax: 781/326-8703 • www.analog.com ...
SRAMs
... For large shift registers, keep data in SRAM instead Move read/write pointers to RAM rather than data – Initialize read address to first entry, write to last – Increment address on each cycle Din ...
... For large shift registers, keep data in SRAM instead Move read/write pointers to RAM rather than data – Initialize read address to first entry, write to last – Increment address on each cycle Din ...
Lecture 17 - Harvey Mudd College
... For large shift registers, keep data in SRAM instead Move read/write pointers to RAM rather than data – Initialize read address to first entry, write to last – Increment address on each cycle Din ...
... For large shift registers, keep data in SRAM instead Move read/write pointers to RAM rather than data – Initialize read address to first entry, write to last – Increment address on each cycle Din ...
Feasibility study of a latchup-based particle detector
... - high e+e- pair density along its track; - bias across the oxide => transient current across the oxide; - this mechanism can be helped by the electric field induced in SiO2 by charges created in Si by the single ionizing particle. Result: oxide breakdown Examples: - Single Event Upset (SEU); - Sing ...
... - high e+e- pair density along its track; - bias across the oxide => transient current across the oxide; - this mechanism can be helped by the electric field induced in SiO2 by charges created in Si by the single ionizing particle. Result: oxide breakdown Examples: - Single Event Upset (SEU); - Sing ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.