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Levels of Difficulty - IFSC-USP
Levels of Difficulty - IFSC-USP

Aalborg Universitet electric boilers in thermal power plants
Aalborg Universitet electric boilers in thermal power plants

A 10nW 12-bit Accurate Analog Storage Cell with 10aA Leakage
A 10nW 12-bit Accurate Analog Storage Cell with 10aA Leakage

... often used in adaptive circuit design. Many leakage-reduction techniques have been proposed in the literature [4]–[8]. However, none of these references has presented experimental work focused specifically on characterizing the switch leakage as a function of terminal voltages. As a result, it is no ...
ADA4311-1 数据手册DataSheet 下载
ADA4311-1 数据手册DataSheet 下载

... dissipation. In addition, 0.1 μF MLCC decoupling capacitors should be located no more than ⅛-inch away from each of the power supply pins. A large, usually tantalum, 10 μF capacitor is required to provide good decoupling for lower frequency signals and to supply current for fast, large signal change ...
Single-Supply, 10MHz, Rail-to-Rail Output, Low-Noise, JFET Amplifier OPA141 OPA2141
Single-Supply, 10MHz, Rail-to-Rail Output, Low-Noise, JFET Amplifier OPA141 OPA2141

... Common-Mode Rejection Ratio vs Temperature ...
Lesson-5 Electronic Theory
Lesson-5 Electronic Theory

EXPERIMENT 2 D`ARSONVAL GALVANOMETER
EXPERIMENT 2 D`ARSONVAL GALVANOMETER

Understanding electronic components
Understanding electronic components

... 16-bit PIC24 microcontrollers and dsPIC33 Digital Signal Controllers (DSC) offer a new level of performance and higher integration. Features supporting this compatibility between these families include common: Instruction set & architecture (dsPIC DSCs add DSP capability), Peripherals, Pin-out. With ...
ACPL-C797 - Avago Technologies
ACPL-C797 - Avago Technologies

PowerPoint Lecture - UCSD Department of Physics
PowerPoint Lecture - UCSD Department of Physics

... combination goes up, so the overall current will be reduced. • If the current is reduced, then F will be less bright. ...
A functional model of silicon carbide JFET and its
A functional model of silicon carbide JFET and its

... nanoseconds. Therefore, the time constant of Vg in Figure 1(c) is actually less than that of Vs, which makes the gate switch on/off current not significantly increased when R decreases. However, when R < 1 Ω, a small variation of the gate signal can cause large impact on gate current. This means tha ...
— Shielded Gate PowerTrench® AN-4163 MOSFET Datasheet Explanation Introduction
— Shielded Gate PowerTrench® AN-4163 MOSFET Datasheet Explanation Introduction

... there is no change in both the drain-to-source voltage, VDS, and the drain current, ID. Once the gate-to-source voltage, VGS, reaches the gate-to-source threshold voltage, VGS(th), at T1, the MOSFET starts to conduct the ID. From T1 to T2, the VGS continues to increase to the plateau voltage, VP, as ...
Lab 1 Introduction to PSIM
Lab 1 Introduction to PSIM

TPS25923x 5-V eFuse with Over Voltage
TPS25923x 5-V eFuse with Over Voltage

... Many systems, such as SSDs, must not allow holdup capacitance energy to dump back through the FET body diode onto a drooping or shorted input bus. The BFET pin is for such systems. An external NFET can be connected “Back to Back (B2B)” with the TPS25923x output and the gate driven by BFET to prevent ...
MAX1700/MAX1701 1-Cell to 3-Cell, High-Power (1A), Low-Noise, Step-Up DC-DC Converters General Description
MAX1700/MAX1701 1-Cell to 3-Cell, High-Power (1A), Low-Noise, Step-Up DC-DC Converters General Description

... Oscillator Maximum Duty Cycle ...
AQUA CATALOGO CEN-AQ1EN15-06 INGLES
AQUA CATALOGO CEN-AQ1EN15-06 INGLES

... connecting the inverters via communications. In this system, if a failure occurs to the master inverter, the next inverter is driven as the master inverter. Moreover, wiring can be saved with use of communications services, which eliminates the need of additional options by using the Modbus RTU comm ...
10-V Reference - Texas Instruments
10-V Reference - Texas Instruments

MAX17129/MAX17149 Low-Cost, 6-String WLED Drivers with Quick-PWM Step-Up Converter General Description
MAX17129/MAX17149 Low-Cost, 6-String WLED Drivers with Quick-PWM Step-Up Converter General Description

... for white LEDs. They are designed for small- to mediumsized LCDs that employ an array of LEDs as the light source. An internal switch step-up controller with QuickPWMK drives the LED array, which can be configured for up to 6 strings in parallel and either 11 LEDs (MAX17129) or 6 LEDs in series (MAX ...
Component Electronic Systems (part 3)
Component Electronic Systems (part 3)

... with some current flowing into each branch. The total supply current is therefore the sum of the currents flowing in the branches. When resistors or resistive components are connected in parallel, the effect is to reduce the resistance in the circuit. ...
FEATURES FUNCTIONAL BLOCK DIAGRAM
FEATURES FUNCTIONAL BLOCK DIAGRAM

... As with any high speed comparator, proper design and layout techniques are essential for obtaining the specified performance. Stray capacitance, inductance, common power and ground impedances, or other layout issues can severely limit performance and can often cause oscillation. The source impedance ...
Parallel Circuits
Parallel Circuits

R - Piazza
R - Piazza

... Ammeters must be placed in series with the component you are measuring the current through. In theory anywhere in a circuit that is in series with a component should have identical current, due to approximations like ideal wires. Proper lab procedure, however, is to place the ammeter just before the ...
Electronic Circuits for the Hobbyist
Electronic Circuits for the Hobbyist

... 120E, 150E, etc. The 'E' just stands for Ohms so 120 ohm, 150 ohm. The original circuit specified the HEF type of cmos IC's which are not readily available in most of Canada. So just get any other type of CMOS chip like the MC4011, MC4020, MC4047 from Motorola. Any other type will do fine too. The B ...
Mixing Signals
Mixing Signals

... A mixer circuit is an important part of many audio systems. For example DJ’s use a mixer to ‘voice over’ records. Recording studios use mixers to balance the sound from different voices and instruments. Summing Amplifier The basic building block of a mixer is an inverting amplifier, configured as a ...
FEATURES GENERAL DESCRIPTION
FEATURES GENERAL DESCRIPTION

... portable devices. The LDO maintains a power supply rejection of greater than 60 dB for frequencies as high as 10 kHz while operating with a low headroom voltage. Each regulator is activated by a high level on the respective enable pin. The ADP5043 is available with factory programmable default outpu ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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