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PHYSICS UNIT 3 Detailed Study: Further electronics
PHYSICS UNIT 3 Detailed Study: Further electronics

... In fact, given that the half cycle time is 0.01 second, the capacitor can still be discharging through the load resistor when the next half cycle (I) begins and increases to above the capacitor voltage at that time. With a large enough capacitor and load resistor, an almost straight line can be ach ...


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... The TPS4002x series of devices are low-input voltage, synchronous, voltage mode-buck controllers. A typical application circuit is shown in Figure 1. These controllers are designed to allow construction of high-performance dc-to-dc converters with input voltages from 2.25 V to 5.5 V, and output volt ...
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... such as, easy constructed, flexible setting, and lower total cost. The design started by the VCO. Figure 3 represents the electronic circuit of the simulated VCO which produce an output frequency range depends on the selected RC included values as well as the value of controlled input voltage. The m ...
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... divider. Output of this divider is compared to the internal voltage reference 1.192 V. When the voltage of the voltage divider output is increased over the reference, the logic will switch off the power circuit. The maximum current, which could flow through the NTC pin is 1mA. Voltage divider must b ...
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... Measurement of the current flow through a wire, necessarily requires modification of the circuit. The flow normally going through the wire must be redirected so it goes through the ammeter. This requires breaking the path that the current normally uses, i.e., cutting the wire and letting the ammeter ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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