Multiple-input floating-gate MOS transistor in analogue electronics
... In order to obtain linear transition function also for voltage lower then limit voltage UG , it is possible to apply two pairs of complementary FGMOS transistors powered by E voltage with opposite sign and with compensated threshold voltage UT H . The possible structure of practical integrated circu ...
... In order to obtain linear transition function also for voltage lower then limit voltage UG , it is possible to apply two pairs of complementary FGMOS transistors powered by E voltage with opposite sign and with compensated threshold voltage UT H . The possible structure of practical integrated circu ...
Part A: Multiple Choice / 18 marks - hhs-snc1d
... his backpack, so he gives each runner one bar and some water. Full of energy, they then set off on their run, running over a big hill, then a hill only half as big, and then around some trees and back to their starting point. When they return they flop down on the ground, exhausted. This story can b ...
... his backpack, so he gives each runner one bar and some water. Full of energy, they then set off on their run, running over a big hill, then a hill only half as big, and then around some trees and back to their starting point. When they return they flop down on the ground, exhausted. This story can b ...
Class: G3a/b Topic: Bipolar transistors – part 1
... and the polarity of the power supply for each type. ...
... and the polarity of the power supply for each type. ...
![“In parallel” means A] both resistors necessarily have the same](http://s1.studyres.com/store/data/002639832_1-e202bc5d069c0ff9b245597d40bc9b26-300x300.png)
Supporting online material
... Fig. S3. (a) Schematic view of a NW core-shell structure with a crystalline core and integrated dielectric shell. (b) Schematic illustration of a NW structure with a crystalline semiconductor core, an insulating gate dielectric inner-shell and a heavily-doped semiconductor gate outer-shell. (c) Sch ...
... Fig. S3. (a) Schematic view of a NW core-shell structure with a crystalline core and integrated dielectric shell. (b) Schematic illustration of a NW structure with a crystalline semiconductor core, an insulating gate dielectric inner-shell and a heavily-doped semiconductor gate outer-shell. (c) Sch ...
MJE340 NPN Epitaxial Silicon Transistor
... This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ...
... This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ...
Note 1
... flow across the intervening vacuum to the anode when a positive potential is applied to it. The device permits flow of current in one direction only as a negative potential applied to the anode repels the electrons. This property of diodes was made use of in the first thermionic radios, in which the ...
... flow across the intervening vacuum to the anode when a positive potential is applied to it. The device permits flow of current in one direction only as a negative potential applied to the anode repels the electrons. This property of diodes was made use of in the first thermionic radios, in which the ...
Inductors and Capacitors
... A is area of the plates d is the distance between the plates is the dielectric constant, a property of the material between the plates The dielectric constant is a property of a material that is a measure of the materials ability to store energy per unit volume for unit voltage difference. C ...
... A is area of the plates d is the distance between the plates is the dielectric constant, a property of the material between the plates The dielectric constant is a property of a material that is a measure of the materials ability to store energy per unit volume for unit voltage difference. C ...
Transistors IV 6-7-11
... thyristor which are switching devices that have the characteristics of either being fully turned on or being fully turned off. Once the SCR is turned on, it conducts current like a regular diode and will remain on as long as the current level does not drop below a predetermined value. If it does the ...
... thyristor which are switching devices that have the characteristics of either being fully turned on or being fully turned off. Once the SCR is turned on, it conducts current like a regular diode and will remain on as long as the current level does not drop below a predetermined value. If it does the ...
TRIAC
TRIAC, from triode for alternating current, is a genericized tradename for an electronic component that can conduct current in either direction when it is triggered (turned on), and is formally called a bidirectional triode thyristor or bilateral triode thyristor.TRIACs are a subset of thyristors and are closely related to silicon controlled rectifiers (SCR). However, unlike SCRs, which are unidirectional devices (that is, they can conduct current only in one direction), TRIACs are bidirectional and so allow current in either direction. Another difference from SCRs is that TRIAC current can be enabled by either a positive or negative current applied to its gate electrode, whereas SCRs can be triggered only by positive current into the gate. To create a triggering current, a positive or negative voltage has to be applied to the gate with respect to the MT1 terminal (otherwise known as A1).Once triggered, the device continues to conduct until the current drops below a certain threshold called the holding current.The bidirectionality makes TRIACs very convenient switches for alternating-current (AC) circuits, also allowing them to control very large power flows with milliampere-scale gate currents. In addition, applying a trigger pulse at a controlled phase angle in an AC cycle allows control of the percentage of current that flows through the TRIAC to the load (phase control), which is commonly used, for example, in controlling the speed of low-power induction motors, in dimming lamps, and in controlling AC heating resistors.