MAX5088/MAX5089 2.2MHz, 2A Buck Converters with an Integrated High-Side Switch General Description
... The MAX5088/MAX5089 high-frequency, DC-DC converters with an integrated n-channel power MOSFET provide up to 2A of load current. The MAX5088 includes an internal power MOSFET to enable the design of a nonsynchronous buck topology power supply. The MAX5089 is for the design of a synchronous buck topo ...
... The MAX5088/MAX5089 high-frequency, DC-DC converters with an integrated n-channel power MOSFET provide up to 2A of load current. The MAX5088 includes an internal power MOSFET to enable the design of a nonsynchronous buck topology power supply. The MAX5089 is for the design of a synchronous buck topo ...
Effect of Pulsed High-Voltage Stimulation on Pholiota Nameko
... with compact size. Copper fuse of 0.03 mm diameter was used as an opening switch to interrupt large circuit current in short time. The voltage charged in primary energy storage capacitor was multiplied using secondary energy storage inductor. The output voltage of the pulsed power generator was 120 ...
... with compact size. Copper fuse of 0.03 mm diameter was used as an opening switch to interrupt large circuit current in short time. The voltage charged in primary energy storage capacitor was multiplied using secondary energy storage inductor. The output voltage of the pulsed power generator was 120 ...
DSP BASED POWER ANALYZING SYSTEM FOR ONSITE MEASUREMENTS W.M.S. Wijesinghe and
... also contributed to the errors in gain and phase, and the gain error can be corrected by multiplying the rms and harmonics amplitudes by the gain error correction factor of the DAQ card, which is determined from the experiments. During the experiments it was found that there is a certain time delay ...
... also contributed to the errors in gain and phase, and the gain error can be corrected by multiplying the rms and harmonics amplitudes by the gain error correction factor of the DAQ card, which is determined from the experiments. During the experiments it was found that there is a certain time delay ...
5. Power supplies requirements
... The supply include the design and manufacture of the elements, the integration of the klystron(s) provided by CERN, the control – command and interlocks system, the testing and measurements, the delivery and the on-site installation. The modulator will be installed at CERN in Geneva. The general lay ...
... The supply include the design and manufacture of the elements, the integration of the klystron(s) provided by CERN, the control – command and interlocks system, the testing and measurements, the delivery and the on-site installation. The modulator will be installed at CERN in Geneva. The general lay ...
control of reactive power and voltage
... With shunt capacitor compensation (chosen to keep midpoint voltage at 1.0 pu when P = 1.4 Po) maximum power transfer capability increased to 1.58 pu of natural power (SIL); represents an increase of 0.16 pu over the uncompensated case voltage regulation is poor, i.e., the voltage magnitude is ve ...
... With shunt capacitor compensation (chosen to keep midpoint voltage at 1.0 pu when P = 1.4 Po) maximum power transfer capability increased to 1.58 pu of natural power (SIL); represents an increase of 0.16 pu over the uncompensated case voltage regulation is poor, i.e., the voltage magnitude is ve ...
A Custom built UHF to VHF downconverter
... Provision was made for tuneable capacitors at all the matching networks and was later replaced by the correct value capacitors and then tuned by pulling and pushing the air core inductors using tweezers. Firstly the regulators are soldered and tested to give out the correct voltages. Secondly the LO ...
... Provision was made for tuneable capacitors at all the matching networks and was later replaced by the correct value capacitors and then tuned by pulling and pushing the air core inductors using tweezers. Firstly the regulators are soldered and tested to give out the correct voltages. Secondly the LO ...
January 23, 2013
... In the ICL7660S and ICL7660A, the four switches of Figure 14 are MOS power switches; S1 is a P-Channel device; and S2, S3 and S4 are N-Channel devices. The main difficulty with this approach is that in integrating the switches, the substrates of S3 and S4 must always remain reverse biased with respe ...
... In the ICL7660S and ICL7660A, the four switches of Figure 14 are MOS power switches; S1 is a P-Channel device; and S2, S3 and S4 are N-Channel devices. The main difficulty with this approach is that in integrating the switches, the substrates of S3 and S4 must always remain reverse biased with respe ...
ADR1581 数据手册DataSheet 下载
... low temperature coefficient voltage reference suitable for high accuracy data acquisition components and systems. The device makes use of the underlying physical nature of a silicon transistor base emitter voltage in the forward-biased operating region. All such transistors have an approximately −2 ...
... low temperature coefficient voltage reference suitable for high accuracy data acquisition components and systems. The device makes use of the underlying physical nature of a silicon transistor base emitter voltage in the forward-biased operating region. All such transistors have an approximately −2 ...
GY3512171221
... In the vector-controlled BTB VSC systems regardless of the topology, one converter typically controls the dc-link voltage and supports its reactive power. This converter can be operated as rectifier in HVDC applications or as an inverter in direct driven wind turbines. The other converter is operate ...
... In the vector-controlled BTB VSC systems regardless of the topology, one converter typically controls the dc-link voltage and supports its reactive power. This converter can be operated as rectifier in HVDC applications or as an inverter in direct driven wind turbines. The other converter is operate ...
Regulating Pulse Width Modulator
... used to boost the available current. A rugged low frequency audio-type transistor should be used, and lead lengths between the PWM and transistor should be as short as possible to minimize the risk of oscillations. Even so, some types of transistors may require collector-base capacitance for stabili ...
... used to boost the available current. A rugged low frequency audio-type transistor should be used, and lead lengths between the PWM and transistor should be as short as possible to minimize the risk of oscillations. Even so, some types of transistors may require collector-base capacitance for stabili ...
Single Diode, 600 V, 10 A
... Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpos ...
... Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpos ...
MAX8540/MAX8541 Synchronizable, High-Frequency Current- and Voltage-Mode PWM Controllers for Isolated Supplies General Description
... A cycle-by-cycle current-limit function controls the peak primary current during overload and short circuit. Both controllers can be set to latch off or to hiccup when a short circuit is detected. The number of current-limited cycles to initiate the hiccup mode and number of cycles skipped are user ...
... A cycle-by-cycle current-limit function controls the peak primary current during overload and short circuit. Both controllers can be set to latch off or to hiccup when a short circuit is detected. The number of current-limited cycles to initiate the hiccup mode and number of cycles skipped are user ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.