Tutorial 2 with answers
... Use the Smith chart to find the shortest lengths of a short-circuited 75Ω line to give the following input impedance: (a) Zin = 0. (b) Zin = ∞. (c) Zin = j75 Ω. (d) Zin = -j50 Ω. (e) Zin = j10 Ω. (Answers: (a) 0 or 0.5 ;(b) 0.25 ; (c) 0.125 ; (d) 0.406 ; (e) 0.021 ) ...
... Use the Smith chart to find the shortest lengths of a short-circuited 75Ω line to give the following input impedance: (a) Zin = 0. (b) Zin = ∞. (c) Zin = j75 Ω. (d) Zin = -j50 Ω. (e) Zin = j10 Ω. (Answers: (a) 0 or 0.5 ;(b) 0.25 ; (c) 0.125 ; (d) 0.406 ; (e) 0.021 ) ...
Impedance_Matching
... How quickly does the output voltage stabilize to its steady state value with the impedance matching network in place? Insert the plot from the AC Sweep performed using PSpice. ...
... How quickly does the output voltage stabilize to its steady state value with the impedance matching network in place? Insert the plot from the AC Sweep performed using PSpice. ...
Programmable SAE 800 Single-/Dual-/Triple- Tone Gong
... particular tone frequency. The sum current II drives the following current amplifier. The loudness generator produces the DAC reference current IL for all three tones. This requires connecting an external resistor to ground. The chip temperature is monitored by the junction control. At temperatures ...
... particular tone frequency. The sum current II drives the following current amplifier. The loudness generator produces the DAC reference current IL for all three tones. This requires connecting an external resistor to ground. The chip temperature is monitored by the junction control. At temperatures ...
ONS321A5VGEVB / ONS321B12VGEVB Evaluation Board User`s
... are held in place. The Test Point and the Probe Socket are shown in Figure 3. Monitoring the PWM Signal The PWM signal from the controller to the driver can be monitored from the probe socket provided at JS11. ...
... are held in place. The Test Point and the Probe Socket are shown in Figure 3. Monitoring the PWM Signal The PWM signal from the controller to the driver can be monitored from the probe socket provided at JS11. ...
Electricity and Circuits
... Every electrical circuit has a certain amount of resistance to the flow of current through it. Many factors affect the resistance of a particular material. The resistance in a wire can change with the thickness of the wire and with the type of material the wire is made of. The amount of resistance ...
... Every electrical circuit has a certain amount of resistance to the flow of current through it. Many factors affect the resistance of a particular material. The resistance in a wire can change with the thickness of the wire and with the type of material the wire is made of. The amount of resistance ...
UJT - ECB2181
... A Unijunction transistor is a three terminal semiconductor switching device.this device has a unique characteristics that when it is triggered , the emitter current increases regeneratively until is limited by emitter power supply the unijunction transistor can be employed in a variety of applicatio ...
... A Unijunction transistor is a three terminal semiconductor switching device.this device has a unique characteristics that when it is triggered , the emitter current increases regeneratively until is limited by emitter power supply the unijunction transistor can be employed in a variety of applicatio ...
BD-50E Instructions - Electro
... provisions of the Low Voltage Directive 73/23/EEC, as amended by 93/68/EEC Because of the risk of EMI, a risk assessment should be carried out prior to use of this equipment. The power output of the Model BD-50EV is limited. The effective range of EMI is less than about 1 meter on so in all directio ...
... provisions of the Low Voltage Directive 73/23/EEC, as amended by 93/68/EEC Because of the risk of EMI, a risk assessment should be carried out prior to use of this equipment. The power output of the Model BD-50EV is limited. The effective range of EMI is less than about 1 meter on so in all directio ...
Low-Voltage CMOS Analog Bootstrapped Switch For
... cancellation by a dummy MOS transistor and an offset cancellation by adding a compensation network [2]. Although charge cancellation methods that make use of a dummy transistor produce good simulation results, great care must be exercised when laying out the clock tree controlling the complementary ...
... cancellation by a dummy MOS transistor and an offset cancellation by adding a compensation network [2]. Although charge cancellation methods that make use of a dummy transistor produce good simulation results, great care must be exercised when laying out the clock tree controlling the complementary ...
Chapter 8 Notes - Valdosta State University
... when its magnet interacts with the electric current. Electric motors convert electrical energy into energy of motion. An electric current passes through the armature composed of loops of wire oriented between two magnets called field magnets. These loops are repelled by both magnets and begin to tur ...
... when its magnet interacts with the electric current. Electric motors convert electrical energy into energy of motion. An electric current passes through the armature composed of loops of wire oriented between two magnets called field magnets. These loops are repelled by both magnets and begin to tur ...
Selective Remanent Ambipolar Charge Transport in Polymeric Field-Effect Transistors
... due to the ferroelectric polarization. In fact, when the polarization switches from one state to the other, charges are displaced across the ferroelectric layer. The associated switching currents appear as sharp features in the drain current at a coercive voltage (Vc) of around ±10 V (Ec = 50 MV m–1 ...
... due to the ferroelectric polarization. In fact, when the polarization switches from one state to the other, charges are displaced across the ferroelectric layer. The associated switching currents appear as sharp features in the drain current at a coercive voltage (Vc) of around ±10 V (Ec = 50 MV m–1 ...
LM148/LM248/LM348 Quad 741 Op Amps LM149 Wide Band
... The LM149 series has the same characteristics as the LM148 except it has been decompensated to provide a wider bandwidth. As a result the part requires a minimum gain of 5. The package pin-outs are such that the inverting input of each amplifier is adjacent to its output. In addition, the amplifier ...
... The LM149 series has the same characteristics as the LM148 except it has been decompensated to provide a wider bandwidth. As a result the part requires a minimum gain of 5. The package pin-outs are such that the inverting input of each amplifier is adjacent to its output. In addition, the amplifier ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.