Model: BC-12b Switching Type Dual Source Battery Management
... system and is receiving sufficient power to charge the battery. The series switch is current limited to protect the external power supply and prevent it from going into fold back current limiting under normal conditions. The standard switching type power supply supplied with the unit is capable of p ...
... system and is receiving sufficient power to charge the battery. The series switch is current limited to protect the external power supply and prevent it from going into fold back current limiting under normal conditions. The standard switching type power supply supplied with the unit is capable of p ...
AP6507 500 kHz 18V 3A SYNCHRONOUS DC/DC BUCK CONVERTER Description
... appropriate saturation current rating is important. A 1µH to 10µH inductor with a DC current rating of at least 25% percent higher than the maximum load current is recommended for most applications. For highest efficiency, the inductor’s DC resistance should be less than 200mΩ. Use a larger inductan ...
... appropriate saturation current rating is important. A 1µH to 10µH inductor with a DC current rating of at least 25% percent higher than the maximum load current is recommended for most applications. For highest efficiency, the inductor’s DC resistance should be less than 200mΩ. Use a larger inductan ...
UC2577-ADJ: Simple Step-Up Voltage
... 1DDxxx, 11Cxx and 31Dxx are manufactured by International Rectifier ...
... 1DDxxx, 11Cxx and 31Dxx are manufactured by International Rectifier ...
secondary coil
... • Mutual induction: When the primary coil is connected to a source of AC voltage, the changing current creates a changing magnetic field, which is carried through the core to the secondary coil. In the secondary coil the changing field induces a varying voltage. • The voltage induced in the secondar ...
... • Mutual induction: When the primary coil is connected to a source of AC voltage, the changing current creates a changing magnetic field, which is carried through the core to the secondary coil. In the secondary coil the changing field induces a varying voltage. • The voltage induced in the secondar ...
Displacement and position sensors
... The strain in an element is a ratio of change in length in the direction of applied load to the original length of an element. The strain changes the resistance R of the element. Therefore, we can say, ∆R/R α ε; ∆R/R = G ε ...
... The strain in an element is a ratio of change in length in the direction of applied load to the original length of an element. The strain changes the resistance R of the element. Therefore, we can say, ∆R/R α ε; ∆R/R = G ε ...
Semi-Conductor Diode notes
... moving, and will destroy the diode. To prevent this, every diode is given a limit of maximum forward current. This is the second of the two most important parameters. We now see that current will flow in the forward bias state but not in the reverse bias state. We can also see that the circuit volta ...
... moving, and will destroy the diode. To prevent this, every diode is given a limit of maximum forward current. This is the second of the two most important parameters. We now see that current will flow in the forward bias state but not in the reverse bias state. We can also see that the circuit volta ...
BDTIC SMBD7000/MMBD7000...
... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expect ...
... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expect ...
ADR510 数据手册DataSheet 下载
... minimum value and the load current is at maximum value. RBIAS also needs to be large enough so that IQ does not exceed 10 mA when the supply voltage is at its maximum value and the load current is at its minimum value. ...
... minimum value and the load current is at maximum value. RBIAS also needs to be large enough so that IQ does not exceed 10 mA when the supply voltage is at its maximum value and the load current is at its minimum value. ...
History of CDMA - 123SeminarsOnly.com
... In these devices, polystyrene film is used as the dielectric. This type of capacitor is not for use in high frequency circuits, because they are constructed like a coil inside. They are used well in filter circuits or timing circuits which run at several hundred KHz or less. The component shown on t ...
... In these devices, polystyrene film is used as the dielectric. This type of capacitor is not for use in high frequency circuits, because they are constructed like a coil inside. They are used well in filter circuits or timing circuits which run at several hundred KHz or less. The component shown on t ...
Week 1 - Transformer
... Introduction A transformer is a device that changes ac electric energy at one voltage level to ac electric energy at another voltage level through the action of a magnetic field. ...
... Introduction A transformer is a device that changes ac electric energy at one voltage level to ac electric energy at another voltage level through the action of a magnetic field. ...
SC4508A Buck or Buck-Boost (Inverting) Current Mode Controller POWER MANAGEMENT
... b) Select inductance value: Sometimes the calculated inductance value is not available off-the-shelf. The designer can choose the adjacent (larger) standard inductance value. The inductance varies with temperature and DC current. It is a good engineering practice to re-evaluate the resultant current ...
... b) Select inductance value: Sometimes the calculated inductance value is not available off-the-shelf. The designer can choose the adjacent (larger) standard inductance value. The inductance varies with temperature and DC current. It is a good engineering practice to re-evaluate the resultant current ...
18.4 - 18.5
... (b) Bulb dims to 1/4 its former brightness (1/2 current) (c) Bulb goes out (d) None of the above The wire “shunt” has almost no resistance and it is in parallel with a bulb having resistance. Therefore voltage across shunt (and bulb ) is ~ 0. Thus almost all the current follows the zero (or ex ...
... (b) Bulb dims to 1/4 its former brightness (1/2 current) (c) Bulb goes out (d) None of the above The wire “shunt” has almost no resistance and it is in parallel with a bulb having resistance. Therefore voltage across shunt (and bulb ) is ~ 0. Thus almost all the current follows the zero (or ex ...
Pre-Lecture 22
... with moist skin, completing the circuit from one hand to the other, but we don’t feel anything when our fingers are dry? Because resistance is much less (~1000 W) when fingers moist, so the current that flows is detectable, whereas with dry fingers the current is so small that we don’t feel it. ...
... with moist skin, completing the circuit from one hand to the other, but we don’t feel anything when our fingers are dry? Because resistance is much less (~1000 W) when fingers moist, so the current that flows is detectable, whereas with dry fingers the current is so small that we don’t feel it. ...
2938633 Datasheet
... voltage set upon delivery is 24 V DC. The output voltage can be set on the potentiometer 5. Protecting the Secondary Side The device is electronically short-circuit-proof and idlingproof. In the event of an error, the output voltage is limited to a maximum of 35 V DC. Make sure that all output cable ...
... voltage set upon delivery is 24 V DC. The output voltage can be set on the potentiometer 5. Protecting the Secondary Side The device is electronically short-circuit-proof and idlingproof. In the event of an error, the output voltage is limited to a maximum of 35 V DC. Make sure that all output cable ...
End 1.4 The Semiconductor Diode
... 1. Doping minute quantities of foreign elements, called impurities (杂质), to the pure semiconductors produces doped semiconductors (掺杂半导体). 2. The relative concentration of free electrons and holes in a semiconductor may be adjusted by addition of minute quantities of appropriate impurity elements. M ...
... 1. Doping minute quantities of foreign elements, called impurities (杂质), to the pure semiconductors produces doped semiconductors (掺杂半导体). 2. The relative concentration of free electrons and holes in a semiconductor may be adjusted by addition of minute quantities of appropriate impurity elements. M ...
VT6T12
... The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from RO ...
... The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from RO ...
Circuit Note
... With the sample code built and loaded onto the EVALADICUP360 and the EVAL-CN0397-ARDZ mounted on top, the device communicates with the PC and displays the reading from each of the three channels. The circuit can be tested by using different light sources at varying distances and observing the readin ...
... With the sample code built and loaded onto the EVALADICUP360 and the EVAL-CN0397-ARDZ mounted on top, the device communicates with the PC and displays the reading from each of the three channels. The circuit can be tested by using different light sources at varying distances and observing the readin ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.