Chapter 13 Transmission Lines
... the connections between devices on a circuit board that are designed to operate at high frequencies. What all of the above examples have in common is that the devices to be connected are separated by distances on the order of a wavelength or much larger, whereas in basic circuit analysis methods, co ...
... the connections between devices on a circuit board that are designed to operate at high frequencies. What all of the above examples have in common is that the devices to be connected are separated by distances on the order of a wavelength or much larger, whereas in basic circuit analysis methods, co ...
MAX4721 DS
... Note 1: Signals on COM_, NO_, or NC_ exceeding V+ or GND are clamped by internal diodes. Limit forward-diode current to maximum current rating. Note 2: This device is constructed using a unique set of packaging techniques that impose a limit on the thermal profile the device can be exposed to during ...
... Note 1: Signals on COM_, NO_, or NC_ exceeding V+ or GND are clamped by internal diodes. Limit forward-diode current to maximum current rating. Note 2: This device is constructed using a unique set of packaging techniques that impose a limit on the thermal profile the device can be exposed to during ...
Application Notes
... photoconductive mode. In this mode the photodiode functions as a current source. ...
... photoconductive mode. In this mode the photodiode functions as a current source. ...
PIMC31 1. Product profile 500 mA, 50 V NPN/PNP double resistor-equipped transistor;
... therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use ...
... therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use ...
The Impact of Power Switching Devices on the Thermal
... needed for the three device solutions are quite different: the IGBT module solution consumes up to 80% more device numbers than the other two press-pack solutions. This is mainly because of the maximum current rating limits for a single IGBT module. When taking into account the extra auxiliary parts ...
... needed for the three device solutions are quite different: the IGBT module solution consumes up to 80% more device numbers than the other two press-pack solutions. This is mainly because of the maximum current rating limits for a single IGBT module. When taking into account the extra auxiliary parts ...
BDTIC
... The gate driver evaluation board EVAL-2EDL23N06PJ was developed to show the functionalities and key features of the Infineon COOLMOS™ gate driver 2EDL23N06PJ in resonant zero voltage turn-on half-bridge applications. The board EVAL-2EDL23N06PJ is therefore not recommended by default for hard switche ...
... The gate driver evaluation board EVAL-2EDL23N06PJ was developed to show the functionalities and key features of the Infineon COOLMOS™ gate driver 2EDL23N06PJ in resonant zero voltage turn-on half-bridge applications. The board EVAL-2EDL23N06PJ is therefore not recommended by default for hard switche ...
UTA-WH-VPS Instruction Sheet
... The REN is used to determine the quantity of appliances, which you may connect to your telephone line and still have all of those appliances ring when your telephone number is called. In most, but not all areas, the sum of the REN's of all appliances connected to one line should not exceed five (5.0 ...
... The REN is used to determine the quantity of appliances, which you may connect to your telephone line and still have all of those appliances ring when your telephone number is called. In most, but not all areas, the sum of the REN's of all appliances connected to one line should not exceed five (5.0 ...
ADG781 数据手册DataSheet下载
... 6. Low Power Dissipation. CMOS construction ensures low power dissipation. 7. Fast tON/tOFF. 8. Break-Before-Make Switching. This prevents channel shorting when the switches are configured as a multiplexer (ADG783 only). ...
... 6. Low Power Dissipation. CMOS construction ensures low power dissipation. 7. Fast tON/tOFF. 8. Break-Before-Make Switching. This prevents channel shorting when the switches are configured as a multiplexer (ADG783 only). ...
+3 V/+5 V, Dual, Serial Input 12-Bit DAC AD7394
... than 200 microamps of current while operating from power supplies in the 2.7 V to 5.5 V range, making it ideal for batteryoperated applications. The AD7394 contains a voltage-switched, 12-bit, laser trimmed digital-to-analog converter, rail-to-rail output op amps, two DAC registers, and a serial inp ...
... than 200 microamps of current while operating from power supplies in the 2.7 V to 5.5 V range, making it ideal for batteryoperated applications. The AD7394 contains a voltage-switched, 12-bit, laser trimmed digital-to-analog converter, rail-to-rail output op amps, two DAC registers, and a serial inp ...
ZXLD1350 30V 350mA LED DRIVER with AEC-Q100 Description
... Device operation (Refer to block diagram and Figure 1 - Operating waveforms) Operation can be best understood by assuming that the ADJ pin of the device is unconnected and the voltage on this pin (VADJ) appears directly at the (+) input of the comparator. When input voltage VIN is first applied, the ...
... Device operation (Refer to block diagram and Figure 1 - Operating waveforms) Operation can be best understood by assuming that the ADJ pin of the device is unconnected and the voltage on this pin (VADJ) appears directly at the (+) input of the comparator. When input voltage VIN is first applied, the ...
ZR4040-2.5 Description Features Applications Pin Assignments
... well as packages for through hole requirements. ...
... well as packages for through hole requirements. ...
Numerical Simulation of Multi-Junction Bias Circuits for
... Fig. 3(b) demonstrates the response due to heating junctions 2 and 3, similar to an absorbed photon. The current increases with temperature as one would expect. The circuit parameters for the case shown in Figs. 2 and 3 give . For Al detector junctions, a bias point exactly at a rise in the DC subga ...
... Fig. 3(b) demonstrates the response due to heating junctions 2 and 3, similar to an absorbed photon. The current increases with temperature as one would expect. The circuit parameters for the case shown in Figs. 2 and 3 give . For Al detector junctions, a bias point exactly at a rise in the DC subga ...
mic2592b.pdf
... explcitly includes all overcurrent and short circuit protections, and on-chip thermal protection for the VAUX[A/B] supplies. Additionally included are the UVLO protections for the +3.3V and +12V main supplies. The /FORCE_ON[A/B] pins do not disable UVLO protection for the VAUX[A/B] supplies. These i ...
... explcitly includes all overcurrent and short circuit protections, and on-chip thermal protection for the VAUX[A/B] supplies. Additionally included are the UVLO protections for the +3.3V and +12V main supplies. The /FORCE_ON[A/B] pins do not disable UVLO protection for the VAUX[A/B] supplies. These i ...
Courseware Sample Electric Power / Controls 25986-F0
... learn how the closed-loop mode of control regulates the motor speed by detecting the armature voltage and current. You will learn how to control the acceleration of the DC Motor/Generator. You will also learn how to limit the current and the torque of the ...
... learn how the closed-loop mode of control regulates the motor speed by detecting the armature voltage and current. You will learn how to control the acceleration of the DC Motor/Generator. You will also learn how to limit the current and the torque of the ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.