Fairchild’s Process Enhancements Eliminate the CMOS SCR Latch-Up Problem In 74HC Logic
... itself and is out of the control of the system designer is internally triggered latch up. Any internal switching node connects to a diode diffusion, and as these diffusions switch the junction depletion capacitance associated with these nodes changes causing a current to be generated. This current c ...
... itself and is out of the control of the system designer is internally triggered latch up. Any internal switching node connects to a diode diffusion, and as these diffusions switch the junction depletion capacitance associated with these nodes changes causing a current to be generated. This current c ...
ADE7768 数据手册DataSheet 下载
... This pin provides access to the on-chip voltage reference. The on-chip reference has a nominal value of 2.45 V and a typical temperature coefficient of 20 ppm/°C. An external reference source may also be connected at this pin. In either case, this pin should be decoupled to AGND with a 1 μF tantalum ...
... This pin provides access to the on-chip voltage reference. The on-chip reference has a nominal value of 2.45 V and a typical temperature coefficient of 20 ppm/°C. An external reference source may also be connected at this pin. In either case, this pin should be decoupled to AGND with a 1 μF tantalum ...
Lecture_8
... resistor with current I1 flowing. Then we go through the middle battery (but from + to – !), which gives –4 V. Finally, there is a drop through a 2 W resistor with current I2. ...
... resistor with current I1 flowing. Then we go through the middle battery (but from + to – !), which gives –4 V. Finally, there is a drop through a 2 W resistor with current I2. ...
MAX328/MAX329 Ultra-Low Leakage Monolithic CMOS Analog Multiplexers General Description
... popular DG508/DG509 in these applications. Adding an external 40kΩ resistor to each input makes the MAX328/MAX329 an excellent fault-tolerant multiplexer. Low leakage (less than 1pA at +25°C) and 2.5kΩ on-resistance allow the circuit to sustain 110V AC faults indefinitely while maintaining an error ...
... popular DG508/DG509 in these applications. Adding an external 40kΩ resistor to each input makes the MAX328/MAX329 an excellent fault-tolerant multiplexer. Low leakage (less than 1pA at +25°C) and 2.5kΩ on-resistance allow the circuit to sustain 110V AC faults indefinitely while maintaining an error ...
BDTIC www.BDTIC.com/infineon ICE3Axxx/ICE3Bxxx C o o l S E T F...
... immediate response in case of load jump at the output. Entering and leaving Burst Mode depends on the level of the feedback voltage. Unlike the CooSET™-F2 which uses an external resistor for startup, the CooSET™-F3 has an integrated startup cell which is connected to high voltage MOSFET Drain. It ch ...
... immediate response in case of load jump at the output. Entering and leaving Burst Mode depends on the level of the feedback voltage. Unlike the CooSET™-F2 which uses an external resistor for startup, the CooSET™-F3 has an integrated startup cell which is connected to high voltage MOSFET Drain. It ch ...
LM35 - Innoviris
... Note 1: Unless otherwise noted, these specifications apply: −55˚C≤TJ≤+150˚C for the LM35 and LM35A; −40˚≤TJ≤+110˚C for the LM35C and LM35CA; and 0˚≤TJ≤+100˚C for the LM35D. VS =+5Vdc and ILOAD =50 µA, in the circuit of Figure 2. These specifications also apply from +2˚C to TMAX in the circuit of Fig ...
... Note 1: Unless otherwise noted, these specifications apply: −55˚C≤TJ≤+150˚C for the LM35 and LM35A; −40˚≤TJ≤+110˚C for the LM35C and LM35CA; and 0˚≤TJ≤+100˚C for the LM35D. VS =+5Vdc and ILOAD =50 µA, in the circuit of Figure 2. These specifications also apply from +2˚C to TMAX in the circuit of Fig ...
TPS70102 数据资料 dataSheet 下载
... regulator 1) and is directly proportional to the output current. Additionally, since the PMOS pass element is a voltage-driven device, the quiescent current is very low and independent of output loading (maximum of 230μA over the full range of output current). This LDO family also features a sleep m ...
... regulator 1) and is directly proportional to the output current. Additionally, since the PMOS pass element is a voltage-driven device, the quiescent current is very low and independent of output loading (maximum of 230μA over the full range of output current). This LDO family also features a sleep m ...
BD00GA5WEFJ
... (2) Connecting the power supply connector backward Connecting of the power supply in reverse polarity can damage the IC. Take precautions when connecting the power supply lines. An external direction diode can be added. (3) Power supply lines Design the PCB layout pattern to provide low impedance GN ...
... (2) Connecting the power supply connector backward Connecting of the power supply in reverse polarity can damage the IC. Take precautions when connecting the power supply lines. An external direction diode can be added. (3) Power supply lines Design the PCB layout pattern to provide low impedance GN ...
the displayed file
... along the dendrite and the y-axis is the voltage). Many voltage snapshots are displayed so the top of these images represent the peak voltages obtained during the simulations: ...
... along the dendrite and the y-axis is the voltage). Many voltage snapshots are displayed so the top of these images represent the peak voltages obtained during the simulations: ...
Wide-VIN Supervised, Multi-Rail Power Supply With Low
... to 2500 kHz by placing a resistor on the RT/CLK pin. The RT/CLK pin voltage is typically 0.5 V and must have a resistor to ground to set the switching frequency. To determine the timing resistance for a given ...
... to 2500 kHz by placing a resistor on the RT/CLK pin. The RT/CLK pin voltage is typically 0.5 V and must have a resistor to ground to set the switching frequency. To determine the timing resistance for a given ...
BDE0600G
... In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under st ...
... In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under st ...
What is an Electric Circuit?
... A “circuit” is a complete loop of wire that allows electrical charge to flow. When electric charge flows, it can light a bulb. What would you have to do to set-up “B” above to make electrical charge flow? [Answer: Take the break out of the wire to close the circuit.] ...
... A “circuit” is a complete loop of wire that allows electrical charge to flow. When electric charge flows, it can light a bulb. What would you have to do to set-up “B” above to make electrical charge flow? [Answer: Take the break out of the wire to close the circuit.] ...
AD8065
... Airflow increases heat dissipation, effectively reducing θJA. Also, more metal directly in contact with the package leads from metal traces, through holes, ground, and power planes reduce the θJA. Care must be taken to minimize parasitic capacitances at the input leads of high speed op amps as discu ...
... Airflow increases heat dissipation, effectively reducing θJA. Also, more metal directly in contact with the package leads from metal traces, through holes, ground, and power planes reduce the θJA. Care must be taken to minimize parasitic capacitances at the input leads of high speed op amps as discu ...
15 kV Megohmmeter Test Set
... performing or assisting in the tests must use all practical safety precautions to prevent contact with energized parts of the test equipment and associated circuits. Persons actually engaged in the test must stand clear of all parts of the complete highvoltage circuit unless the Test Set is de-energ ...
... performing or assisting in the tests must use all practical safety precautions to prevent contact with energized parts of the test equipment and associated circuits. Persons actually engaged in the test must stand clear of all parts of the complete highvoltage circuit unless the Test Set is de-energ ...
Operational Amplifiers and Applications Lecture Slides
... • This is a special case of the non-inverting amplifier, which is also called a voltage follower, with infinite R1 and zero R2. Hence Av = 1. ...
... • This is a special case of the non-inverting amplifier, which is also called a voltage follower, with infinite R1 and zero R2. Hence Av = 1. ...
Basic Properties Terminology Theory
... Where Vb is the barrier voltage, V the applied voltage, q the electron charge, εs the semiconductor permittivity and N is the carrier concentration. From this relationship the ZnO carrier concentration, N, was determined to be about 2 x 1017 per cm3 [7]. In addition, the width of the depletion layer ...
... Where Vb is the barrier voltage, V the applied voltage, q the electron charge, εs the semiconductor permittivity and N is the carrier concentration. From this relationship the ZnO carrier concentration, N, was determined to be about 2 x 1017 per cm3 [7]. In addition, the width of the depletion layer ...
A Successive Approximation Technique for Displaying Gray Shades
... is exploited to display gray shades by applying data voltages corresponding to either ON or OFF state during each time interval depending on the gray-shade data. The number of gray shades that can be displayed in a cycle consisting of “ ” time . The time interval could be the select time in interval ...
... is exploited to display gray shades by applying data voltages corresponding to either ON or OFF state during each time interval depending on the gray-shade data. The number of gray shades that can be displayed in a cycle consisting of “ ” time . The time interval could be the select time in interval ...
AP Physics C Exam Questions 1991
... 1995E2. A parallel-plate capacitor is made from two sheets of metal, each with an area of 1.0 square meter, separated by a sheet of plastic 1.0 millimeter (10 -3 m) thick, as shown above. The capacitance is measured to be 0.05 microfarad (5 x 10 -8 F) . a. What is the dielectric constant of the plas ...
... 1995E2. A parallel-plate capacitor is made from two sheets of metal, each with an area of 1.0 square meter, separated by a sheet of plastic 1.0 millimeter (10 -3 m) thick, as shown above. The capacitance is measured to be 0.05 microfarad (5 x 10 -8 F) . a. What is the dielectric constant of the plas ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.