CONVEXITY OF RESISTIVE CIRCUIT CHARACTERISTICS
... Fig.12. Resistive circuit structure (left) and oriented D2-structure (right) of the circuit of Fig.3. The question of whether or not the second derivative of the transfer characteristic from a source on branch s to the voltage or current of a resistor on branch r has always the same sign, be it posi ...
... Fig.12. Resistive circuit structure (left) and oriented D2-structure (right) of the circuit of Fig.3. The question of whether or not the second derivative of the transfer characteristic from a source on branch s to the voltage or current of a resistor on branch r has always the same sign, be it posi ...
DC Circuits MC
... voltage. If each one is an incandescent bulb of fixed resistance, which statement about these bulbs is correct? A) Both bulbs glow with the same brightness, but less than their normal brightness. B) The 50-W bulb glows more brightly than the 100-W bulb. C) Both bulbs glow with the same brightness, b ...
... voltage. If each one is an incandescent bulb of fixed resistance, which statement about these bulbs is correct? A) Both bulbs glow with the same brightness, but less than their normal brightness. B) The 50-W bulb glows more brightly than the 100-W bulb. C) Both bulbs glow with the same brightness, b ...
Evaluation Kit - Apex Microtechnology
... PA94/PA95 pin-out. With ample breadboarding areas it is flexible enough to analyze a multitude of standard or proprietary circuit configurations. Critical connections for power supply bypassing, compensation and current limiting are pre-wired. Components not usually readily available in engineering ...
... PA94/PA95 pin-out. With ample breadboarding areas it is flexible enough to analyze a multitude of standard or proprietary circuit configurations. Critical connections for power supply bypassing, compensation and current limiting are pre-wired. Components not usually readily available in engineering ...
MAX9060–MAX9064 Ultra-Small, Low-Power Single Comparators in 4-Bump UCSP and 5 SOT23 General Description
... noise immunity and glitch-free operation. If additional hysteresis is needed, an external positive feedback network can be easily implemented on the MAX9060, MAX9062, and MAX9064 noninverting input devices. ...
... noise immunity and glitch-free operation. If additional hysteresis is needed, an external positive feedback network can be easily implemented on the MAX9060, MAX9062, and MAX9064 noninverting input devices. ...
Two Channel SATA 3 Gbps Redriver with Cable Detect
... Device must be placed < 2" (or <5cm) from eSATA connector). To use this feature CH 1 input must be connected to SATA host while CH 2 input to eSATA connector. After power up device sets CD = 0, which makes the SATA Host monitoring this pin go into normal SATA OOB state where host will send out COMRE ...
... Device must be placed < 2" (or <5cm) from eSATA connector). To use this feature CH 1 input must be connected to SATA host while CH 2 input to eSATA connector. After power up device sets CD = 0, which makes the SATA Host monitoring this pin go into normal SATA OOB state where host will send out COMRE ...
Low-Dropout 0.5-A Negative Linear Regulator
... The UCC384-x family of negative linear-series pass regulators is tailored for low-dropout applications where low-quiescent power is important. Fabricated with a BCDMOS technology ideally suited for low input-to-output differential applications, the UCC384-x passes 0.5 A while requiring only 0.2 V of ...
... The UCC384-x family of negative linear-series pass regulators is tailored for low-dropout applications where low-quiescent power is important. Fabricated with a BCDMOS technology ideally suited for low input-to-output differential applications, the UCC384-x passes 0.5 A while requiring only 0.2 V of ...
datasheet
... • Protect the drive from dirt, moisture, and accidental contact. • Provide sufficient room for access to the terminal block and calibration trimpots. • Mount the drive away from other heat sources. Operate the drive within the specified ambient operating temperature range. • Prevent loose connection ...
... • Protect the drive from dirt, moisture, and accidental contact. • Provide sufficient room for access to the terminal block and calibration trimpots. • Mount the drive away from other heat sources. Operate the drive within the specified ambient operating temperature range. • Prevent loose connection ...
BDTIC
... NFC Modules acting as tag/target (passive mode) or acting as initiator/reader (active mode). .......... 5 Time domain RF simulation of the NFC principle. ............................................................................... 6 RF envelope (13.56MHz) @ the primarty res., toggling the seconda ...
... NFC Modules acting as tag/target (passive mode) or acting as initiator/reader (active mode). .......... 5 Time domain RF simulation of the NFC principle. ............................................................................... 6 RF envelope (13.56MHz) @ the primarty res., toggling the seconda ...
AXAS-A - Ketek
... and workmanship for a period of one year from shipment. KETEK GmbH will, without charge, repair or replace (at its option) a defective instrument upon return to the factory. This warranty does not apply in the event of misuse or abuse of the instrument or unauthorized alterations or repair. KETEK Gm ...
... and workmanship for a period of one year from shipment. KETEK GmbH will, without charge, repair or replace (at its option) a defective instrument upon return to the factory. This warranty does not apply in the event of misuse or abuse of the instrument or unauthorized alterations or repair. KETEK Gm ...
... The addenda is used to describe the empty sample holder, support rod, and anything else which may generate a background signal during a susceptibility measurement. The capability for subtracting this background signal from the data recorded with a sample present is built into the software package. T ...
A 24-GHz CMOS Direct-Conversion Sub-Harmonic Downconverter
... The gates of these transistors are driven by 12 GHz quadrature signals. The transistors should switch at 50 % duty cycle for best noise and conversion loss performance. This is achieved by a biasing the gate at a voltage which is above the source (or drain) by the threshold voltage of the transistor ...
... The gates of these transistors are driven by 12 GHz quadrature signals. The transistors should switch at 50 % duty cycle for best noise and conversion loss performance. This is achieved by a biasing the gate at a voltage which is above the source (or drain) by the threshold voltage of the transistor ...
Module 5.3
... Ships generators are typically three phase 450V, 60hz, synchronous machines. Their power ratings run from 500KVA to 1500KVA. They can be either driven by steam or diesel prime movers. There are always an even number of magnetic poles on the rotor carrying a nominally small amount of D/C current. Thi ...
... Ships generators are typically three phase 450V, 60hz, synchronous machines. Their power ratings run from 500KVA to 1500KVA. They can be either driven by steam or diesel prime movers. There are always an even number of magnetic poles on the rotor carrying a nominally small amount of D/C current. Thi ...
View - Microsemi
... circuits we usually use have to move up for higher rating. There are two commonly used devices for level two protection circuitsthe diode bridge plus the thyristor surge protector and the battery tracking protection thyristor IC. If we use –70 V for the high battery, the maximum thyristor breakover ...
... circuits we usually use have to move up for higher rating. There are two commonly used devices for level two protection circuitsthe diode bridge plus the thyristor surge protector and the battery tracking protection thyristor IC. If we use –70 V for the high battery, the maximum thyristor breakover ...
CIPOS Mini Technical description
... components, such as IGBT or gate drive IC, as well as to the design of the necessary external circuitry, such as bootstrap or interfacing. Integrating discrete power semiconductors and drivers into one package allows them to reduce the time and effort spent on design. To meet the strong demand for s ...
... components, such as IGBT or gate drive IC, as well as to the design of the necessary external circuitry, such as bootstrap or interfacing. Integrating discrete power semiconductors and drivers into one package allows them to reduce the time and effort spent on design. To meet the strong demand for s ...
QUADRUPLE OPERATIONAL AMPLIFIER LM2902-EP FEATURES
... Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absol ...
... Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absol ...
microTimer User`s Manual
... Igniter selection for use with the microTimer Make sure that the igniter that you use does not exceed the maximum current capability of the timer as listed in the specifications section of the manual. When used with an appropriate voltage battery, low current e-matches and Estes igniters work fine. ...
... Igniter selection for use with the microTimer Make sure that the igniter that you use does not exceed the maximum current capability of the timer as listed in the specifications section of the manual. When used with an appropriate voltage battery, low current e-matches and Estes igniters work fine. ...
Gallium Nitride (GaN) versus Silicon Carbide (SiC)
... Lateral devices generally require more space than vertical devices. Manufacturing yields are also impacted by larger devices. Lateral devices tend to be limited in their operating voltage capability because of the large electric fields which must be sustained across the surface of the device. While ...
... Lateral devices generally require more space than vertical devices. Manufacturing yields are also impacted by larger devices. Lateral devices tend to be limited in their operating voltage capability because of the large electric fields which must be sustained across the surface of the device. While ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.