10.7 Gbps Active Back-Termination, Differential Laser Diode Driver ADN2525
... resistor between IBMON and GND, the bias current can be monitored as a voltage across the resistor. A low temperature coefficient precision resistor must be used for the IBMON resistor (RIBMON). Any error in the value of RIBMON due to tolerances, or drift in its value over temperature, contributes t ...
... resistor between IBMON and GND, the bias current can be monitored as a voltage across the resistor. A low temperature coefficient precision resistor must be used for the IBMON resistor (RIBMON). Any error in the value of RIBMON due to tolerances, or drift in its value over temperature, contributes t ...
Comparing Performance of Current Ramp and Voltage Ramp Hot Swap Controller ICs
... responses to three different load capacitors (0 µF, 560 µF, and 1410 µF). Since inrush current slew rate is programmed, it ramps up at a programmed fixed rate until the CIMAX capacitor is fully charged. Different charging times with the three capacitors produce different shapes of inrush current. Fi ...
... responses to three different load capacitors (0 µF, 560 µF, and 1410 µF). Since inrush current slew rate is programmed, it ramps up at a programmed fixed rate until the CIMAX capacitor is fully charged. Different charging times with the three capacitors produce different shapes of inrush current. Fi ...
Slash Rated Devices 2
... "Low" resistance grounding is used to limit ground fault current to values acceptable for relaying schemes. This type of grounding is used mainly in medium voltage systems and is not widely installed in low voltage applications (600V or below). The "High" Resistance Grounded System offers the advan ...
... "Low" resistance grounding is used to limit ground fault current to values acceptable for relaying schemes. This type of grounding is used mainly in medium voltage systems and is not widely installed in low voltage applications (600V or below). The "High" Resistance Grounded System offers the advan ...
Linear and Digital IC Applications - ECM
... The operational amplifier is a versatile device that can be used to amplify dc as well as ac input signals and was originally designed for computing such mathematical functions as addition, subtraction, multiplication and integration. ...
... The operational amplifier is a versatile device that can be used to amplify dc as well as ac input signals and was originally designed for computing such mathematical functions as addition, subtraction, multiplication and integration. ...
TS3004 - Silicon Labs
... PWMOUT. Note VCPWM is approximately 300mV, which is the RSET voltage. Also note that ICPWM is either 1µA or 100nA. Refer to Table 1. The PWMOUT output pulse width can be adjusted further after selecting a CPWM capacitor. This can be achieved by applying a voltage to the PWM_CNTRL pin between VRSET a ...
... PWMOUT. Note VCPWM is approximately 300mV, which is the RSET voltage. Also note that ICPWM is either 1µA or 100nA. Refer to Table 1. The PWMOUT output pulse width can be adjusted further after selecting a CPWM capacitor. This can be achieved by applying a voltage to the PWM_CNTRL pin between VRSET a ...
LT1073 - Micropower DC/DC Converter Adjustable and Fixed 5V, 12V
... flux, in an inductor core and then switching this energy into the load. Since it is flux, not charge, that is stored, the output voltage can be higher, lower, or opposite in polarity to the input voltage by choosing an appropriate switching topology. To operate as an efficient energy transfer elemen ...
... flux, in an inductor core and then switching this energy into the load. Since it is flux, not charge, that is stored, the output voltage can be higher, lower, or opposite in polarity to the input voltage by choosing an appropriate switching topology. To operate as an efficient energy transfer elemen ...
Figure 1: System consisting of two Chua`s circuits coupled
... was the first physical implementation of chaos which has been rigorously proved (Kapitaniac, 2000). Any autonomous circuit made from standard components (resistors, capacitors, inductors) must satisfy three criteria in order to show chaotic behavior, i) At least one non-linear element, ii) one or mo ...
... was the first physical implementation of chaos which has been rigorously proved (Kapitaniac, 2000). Any autonomous circuit made from standard components (resistors, capacitors, inductors) must satisfy three criteria in order to show chaotic behavior, i) At least one non-linear element, ii) one or mo ...
REG113-285 数据资料 dataSheet 下载
... Typical ground pin current is only 850µA (at IOUT = 400mA) and drops to 10nA when not enabled. Unlike regulators with PNP pass devices, quiescent current remains relatively constant over load variations and under dropout conditions. The REG113 has very low output noise (typically 28µVrms for VOUT = ...
... Typical ground pin current is only 850µA (at IOUT = 400mA) and drops to 10nA when not enabled. Unlike regulators with PNP pass devices, quiescent current remains relatively constant over load variations and under dropout conditions. The REG113 has very low output noise (typically 28µVrms for VOUT = ...
isscc 2013 / session 24 / energy
... is proportional to CVDD2. Near-threshold (Vt) operation achieves an energy minimum [1]. Resonant clocking [2-5] can reduce the effective capacitance of the clock distribution network [3]. In this work, a new resonant clocking scheme enabling power reduction at any clock frequency is proposed and app ...
... is proportional to CVDD2. Near-threshold (Vt) operation achieves an energy minimum [1]. Resonant clocking [2-5] can reduce the effective capacitance of the clock distribution network [3]. In this work, a new resonant clocking scheme enabling power reduction at any clock frequency is proposed and app ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.