Resonance Circuits and Applications
... components and the frequency of operation. The impedance therefore has an associated magnitude and phase given as: ...
... components and the frequency of operation. The impedance therefore has an associated magnitude and phase given as: ...
TL430 数据资料 dataSheet 下载
... Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant ...
... Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant ...
Design Techniques for Self Voltage Controllable Circuit on 2:1
... supply through high Vt MOSFET switches. In spite of this, there are major drawbacks with the use of MTCMOS technique.[3] these drawbacks are non retention of data by memories and flip-flop. The other one is Variable-ThresholdVoltage CMOS (VTCMOS) [4]. It reduces leakage power (Pst) by increasing the ...
... supply through high Vt MOSFET switches. In spite of this, there are major drawbacks with the use of MTCMOS technique.[3] these drawbacks are non retention of data by memories and flip-flop. The other one is Variable-ThresholdVoltage CMOS (VTCMOS) [4]. It reduces leakage power (Pst) by increasing the ...
OPA2677 Dual, Wideband, High Output Current Operational Amplifier FEATURES
... (3) Test levels: (A) 100% tested at +25°C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (4) Current is considered positive out of node. VCM is the input common-mode voltage. (5) Tested < 3dB bel ...
... (3) Test levels: (A) 100% tested at +25°C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (4) Current is considered positive out of node. VCM is the input common-mode voltage. (5) Tested < 3dB bel ...
SN65LVEL11 数据资料 dataSheet 下载
... Maximum switching frequency measured at output amplitude of 300 mVpp. Within-device skew is defined as identical transitions on similar paths through a device. Device-Device Skew is defined as identical transitions at identical Vcc levels. Duty cycle skew is the difference between a tPLH and tPHL pr ...
... Maximum switching frequency measured at output amplitude of 300 mVpp. Within-device skew is defined as identical transitions on similar paths through a device. Device-Device Skew is defined as identical transitions at identical Vcc levels. Duty cycle skew is the difference between a tPLH and tPHL pr ...
N1224 TG0045A.indd
... — These batteries respond better than standard maintenance-free. Charge acceptance of these batteries may display characteristics similar to maintenance batteries. ...
... — These batteries respond better than standard maintenance-free. Charge acceptance of these batteries may display characteristics similar to maintenance batteries. ...
Text for specifiers - Industrial Solutions
... reliable connection for wires with a cross section going from 1.5 to 10mm2 - The terminals have an IP20 protection degree, - The devices are DIN-rail mountable - The switches and push-buttons are equipped with a transparent circuit indicator - The short-circuit resistance is at least 3kV - The switc ...
... reliable connection for wires with a cross section going from 1.5 to 10mm2 - The terminals have an IP20 protection degree, - The devices are DIN-rail mountable - The switches and push-buttons are equipped with a transparent circuit indicator - The short-circuit resistance is at least 3kV - The switc ...
BM1Q001FJ
... to keep EMI low. With MOSFET for switching and current detection resistors as external devices, a higher degree of design freedom is achieved. As BM1Q00XFJ series built in HV starter circuit, it contributes to low consumption power and high speed start. Because the built-in burst mode is reduced swi ...
... to keep EMI low. With MOSFET for switching and current detection resistors as external devices, a higher degree of design freedom is achieved. As BM1Q00XFJ series built in HV starter circuit, it contributes to low consumption power and high speed start. Because the built-in burst mode is reduced swi ...
Printed Circuit Board
... Op Amps can be used essentially in two modes: as an amplifier, as suggested by its name; secondly, it can be used as a comparator. Using the Op Amp as a comparator means that the input at pins 2 and 3 are constantly being compared. These changes are always the result of a change in voltage at pin 2 ...
... Op Amps can be used essentially in two modes: as an amplifier, as suggested by its name; secondly, it can be used as a comparator. Using the Op Amp as a comparator means that the input at pins 2 and 3 are constantly being compared. These changes are always the result of a change in voltage at pin 2 ...
MAX1298/MAX1299 12-Bit Serial-Output Temperature Sensors with 5-Channel ADC General Description
... temperature sensing with 12-bit resolution, using +5V and +3V supply voltages, respectively. Accuracy is ±1°C from 0 to +70°C, with no calibration needed. The devices feature an algorithmic switched-capacitor analog-to-digital converter (ADC), an on-chip clock, and a 3-wire serial interface compatib ...
... temperature sensing with 12-bit resolution, using +5V and +3V supply voltages, respectively. Accuracy is ±1°C from 0 to +70°C, with no calibration needed. The devices feature an algorithmic switched-capacitor analog-to-digital converter (ADC), an on-chip clock, and a 3-wire serial interface compatib ...
lightning arrestor
... c) Sufficient creepage distance shall be provided to reduce excessive uneven voltages over the porcelain due to contamination, for which the arrestor shall not fail. d) Seals shall be provided in such a way that these are always effectively maintained even when discharging the maximum rated lightni ...
... c) Sufficient creepage distance shall be provided to reduce excessive uneven voltages over the porcelain due to contamination, for which the arrestor shall not fail. d) Seals shall be provided in such a way that these are always effectively maintained even when discharging the maximum rated lightni ...
580393681ADM3202_22_1385_c.pdf
... data transmission at rates well in excess of the EIA/RS-232E specifications. RS-232 voltage levels are maintained at data rates up to 460 kbps even under worst-case loading conditions. This allows high speed data links between two terminals and is suitable for the new generation ISDN modem standards ...
... data transmission at rates well in excess of the EIA/RS-232E specifications. RS-232 voltage levels are maintained at data rates up to 460 kbps even under worst-case loading conditions. This allows high speed data links between two terminals and is suitable for the new generation ISDN modem standards ...
MAX961–MAX964/ MAX997/MAX999 Single/Dual/Quad, Ultra
... The MAX961–MAX964/MAX997/MAX999 are low-power, ultra-high-speed comparators with internal hysteresis. These devices are optimized for single +3V or +5V operation. The input common-mode range extends 100mV Beyond-theRails™, and the outputs can sink or source 4mA to within 0.52V of GND and VCC. Propag ...
... The MAX961–MAX964/MAX997/MAX999 are low-power, ultra-high-speed comparators with internal hysteresis. These devices are optimized for single +3V or +5V operation. The input common-mode range extends 100mV Beyond-theRails™, and the outputs can sink or source 4mA to within 0.52V of GND and VCC. Propag ...
305-261/262 Measurement Laboratory
... shows the maximum sensitivity. However, the further increase of the distance between the fiber bundle and the reflective object determines the maximum output of the detector followed by a Displacement decrease because the light intensity decreases according to an inverse square law with respect to t ...
... shows the maximum sensitivity. However, the further increase of the distance between the fiber bundle and the reflective object determines the maximum output of the detector followed by a Displacement decrease because the light intensity decreases according to an inverse square law with respect to t ...
D43052327
... make the beam deflect by applying the voltage. The amount of force depends on the piezoelectric coefficient. Therefore, the low actuation voltage can be achieved by chosen a high piezoelectric .The second type of MEMS switch is the electromagnetic RF MEMS switch. This type of switch uses coil on top ...
... make the beam deflect by applying the voltage. The amount of force depends on the piezoelectric coefficient. Therefore, the low actuation voltage can be achieved by chosen a high piezoelectric .The second type of MEMS switch is the electromagnetic RF MEMS switch. This type of switch uses coil on top ...
High Accuracy and Fast Speed MPPT Methods
... higher than 90% OC-voltage of the string under any solar irradiance [37]. To begin the SSJ-GMPPT, initializing the operating voltage is necessary which is shown as Os in Fig. 3. Then, the SSJ-GMPPT operates the following three processes. Searching Process: With the IncCond method, the first local PP ...
... higher than 90% OC-voltage of the string under any solar irradiance [37]. To begin the SSJ-GMPPT, initializing the operating voltage is necessary which is shown as Os in Fig. 3. Then, the SSJ-GMPPT operates the following three processes. Searching Process: With the IncCond method, the first local PP ...
10.1063-1.2234818
... rapid optical switching 共on a picosecond time scale兲. We present the characteristic Green’s function of the diffusive conduction derived for arbitrary initial conditions. We also report the series solutions of the diffusive conduction obtained for different boundary conditions 共V = 0 and ⵜV = 0 alon ...
... rapid optical switching 共on a picosecond time scale兲. We present the characteristic Green’s function of the diffusive conduction derived for arbitrary initial conditions. We also report the series solutions of the diffusive conduction obtained for different boundary conditions 共V = 0 and ⵜV = 0 alon ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.